公开(公告)号：US5733427A

公开(公告)日：1998-03-31

申请号：US413898

申请日：1995-03-30

申请人： Michio Satou ,  Takashi Yamanobe ,  Mitsuo Kawai ,  Tatsuzo Kawaguchi ,  Kazuhiko Mitsuhashi ,  Toshiaki Mizutani

发明人： Michio Satou ,  Takashi Yamanobe ,  Mitsuo Kawai ,  Tatsuzo Kawaguchi ,  Kazuhiko Mitsuhashi ,  Toshiaki Mizutani

IPC分类号： C04B35/58 ,  C23C14/34 ,  B22F3/14

CPC分类号： C04B35/58092 ,  C04B35/645 ,  C04B35/65 ,  C23C14/3414

摘要： A sputtering target formed of a refractory metallic silicide having a composition MSi.sub.x including a mixture composition of an MSi.sub.2 phase in the form of particles (M: at least one refractory metal selected from a group consisting of W, Mo, Ti, Zr, Hf, Ni and Ta), and an Si phase provided as a matrix phase. Interface layers having a predetermined thickness are formed at the interfaces between the MSi.sub.2 phase and the Si phase. The value X in the composition formula MSi.sub.x is set to a range of 2.0 to 4.0, and the thickness of the interface layers formed between the MSi.sub.2 phase and the Si phase, the dispersion of the composition, the density ratio of the target, the electrical resistivity of the Si phase and the surface roughness are set to predetermined values. An uniform high-quality thin film in which a composition distribution is uniform can be manufactured stably by using this target.

摘要翻译： 由具有组成为MSix的难熔金属硅化物形成的溅射靶，所述组合物包括颗粒形式的MSi2相的混合组成（M：选自W，Mo，Ti，Zr，Hf， Ni和Ta）和作为基质相的Si相。 在MSi2相和Si相之间的界面处形成具有预定厚度的界面层。 组成式MSix中的值X设定在2.0〜4.0的范围内，形成在MSi2相和Si相之间的界面层的厚度，组成的分散性，靶的密度比，电 Si相的电阻率和表面粗糙度被设定为预定值。 通过使用该目标，可以稳定地制造组合物分布均匀的均匀的高品质薄膜。

公开(公告)号：US5447616A

公开(公告)日：1995-09-05

申请号：US166007

申请日：1993-12-14

申请人： Michio Satou ,  Takashi Yamanobe ,  Mitsuo Kawai ,  Tatsuzo Kawaguchi ,  Kazuhiko Mitsuhashi ,  Toshiaki Mizutani

发明人： Michio Satou ,  Takashi Yamanobe ,  Mitsuo Kawai ,  Tatsuzo Kawaguchi ,  Kazuhiko Mitsuhashi ,  Toshiaki Mizutani

IPC分类号： C04B35/58 ,  C23C14/34

CPC分类号： C04B35/58092 ,  C04B35/645 ,  C04B35/65 ,  C23C14/3414

摘要： A sputtering target formed of a refractory metallic silicide having a composition MSi.sub.x including a mixture composition of an MSi.sub.2 phase in the form of particles (M: at least one refractory metal selected from a group consisting of W, Mo, Ti, Zr, Hf, Ni and Ta), and an Si phase provided as a matrix phase. Interface layers having a predetermined thickness are formed at the interfaces between the MSi.sub.2 phase and the Si phase. The value X in the composition formula MSi.sub.x is set to a range of 2.0 to 4.0, and the thickness of the interface layers formed between the MSi.sub.2 phase and the Si phase, the dispersion of the composition, the density ratio of the target, the electrical resistivity of the Si phase and the surface roughness are set to predetermined values. An uniform high-quality thin film in which a composition distribution is uniform can be manufactured stably by using this target.

摘要翻译： 由具有组成为MSix的难熔金属硅化物形成的溅射靶，所述组合物包括颗粒形式的MSi2相的混合组成（M：选自W，Mo，Ti，Zr，Hf， Ni和Ta）和作为基质相的Si相。 在MSi2相和Si相之间的界面处形成具有预定厚度的界面层。 组成式MSix中的值X设定在2.0〜4.0的范围内，形成在MSi2相和Si相之间的界面层的厚度，组成的分散性，靶的密度比，电 Si相的电阻率和表面粗糙度被设定为预定值。 通过使用该目标，可以稳定地制造组合物分布均匀的均匀的高品质薄膜。

公开(公告)号：US5294321A

公开(公告)日：1994-03-15

申请号：US974317

申请日：1993-11-10

申请人： Michio Satou ,  Takashi Yamanobe ,  Mitsuo Kawai ,  Tatsuzo Kawaguchi ,  Kazuhiko Mitsuhashi ,  Toshiaki Mizutani

发明人： Michio Satou ,  Takashi Yamanobe ,  Mitsuo Kawai ,  Tatsuzo Kawaguchi ,  Kazuhiko Mitsuhashi ,  Toshiaki Mizutani

IPC分类号： C04B35/58 ,  C23C14/34

CPC分类号： C04B35/58092 ,  C04B35/645 ,  C04B35/65 ,  C23C14/3414

摘要： A sputtering target formed of a refractory metallic silicide having a composition MSi.sub.x including a mixture composition of an MSi.sub.2 phase in the form of particles (M: at least one refractory metal selected from a group consisting of W, Mo, Ti, Zr, Hf, Ni and Ta), and an Si phase provided as a matrix phase. Interface layers having a predetermined thickness are formed at the interfaces between the MSi.sub.2 phase and the Si phase. The value X in the composition formula MSi.sub.x is set to a range of 2.0 to 4.0, and the thickness of the interface layers formed between the MSi.sub.2 phase and the Si phase, the dispersion of the composition, the density ratio of the target, the electrical resistivity of the Si phase and the surface roughness are set to predetermined values. An uniform high-quality thin film in which a composition distribution is uniform can be manufactured stably by using this target.

摘要翻译： 由具有组成为MSix的难熔金属硅化物形成的溅射靶，所述组合物包括颗粒形式的MSi2相的混合组成（M：选自W，Mo，Ti，Zr，Hf， Ni和Ta）和作为基质相的Si相。 在MSi2相和Si相之间的界面处形成具有预定厚度的界面层。 组成式MSix中的值X设定在2.0〜4.0的范围内，形成在MSi2相和Si相之间的界面层的厚度，组成的分散性，靶的密度比，电 Si相的电阻率和表面粗糙度被设定为预定值。 通过使用该目标，可以稳定地制造组合物分布均匀的均匀的高品质薄膜。

公开(公告)号：US5458697A

公开(公告)日：1995-10-17

申请号：US351542

申请日：1994-12-07

申请人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

发明人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

IPC分类号： C22B9/22 ,  C22B34/10 ,  C22B34/12 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L21/477

CPC分类号： C22B34/1272 ,  C22B34/10 ,  C22B34/129 ,  C22B34/1295 ,  C22B9/22 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/76841 ,  H01L23/53257 ,  H01L2924/0002

摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.

摘要翻译： 这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。 高纯度金属的Al含量不大于10ppm。 氧含量大于250ppm，Fe，Ni和Cr的含量不大于10ppm，Na和K的含量不超过0.1ppm。 高纯度金属是通过用碘化法纯化粗金属或用粗金属表面处理去除存在于其表面上的污染层，然后在高真空中熔化具有电子束的表面处理材料而获得的。

公开(公告)号：US5418071A

公开(公告)日：1995-05-23

申请号：US12845

申请日：1993-02-04

申请人： Michio Satou ,  Takashi Yamanobe ,  Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi ,  Toshihiro Maki ,  Minoru Obata ,  Shigeru Ando

发明人： Michio Satou ,  Takashi Yamanobe ,  Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi ,  Toshihiro Maki ,  Minoru Obata ,  Shigeru Ando

IPC分类号： B22F3/14 ,  C04B35/58 ,  C22C1/05 ,  C23C14/06 ,  C23C14/34 ,  H01L21/28 ,  H01L21/285 ,  B22F7/06

CPC分类号： C04B35/58085 ,  C04B35/58092 ,  C04B35/645 ,  C04B35/65 ,  C23C14/3414 ,  Y10T428/12014 ,  Y10T428/12028 ,  Y10T428/12049 ,  Y10T428/12056

摘要： In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.

摘要翻译： 在本发明中，金属硅化物晶粒形成金属硅化物相的互连结构，形成Si相的Si晶粒不连续地分散在金属硅化物相之间，以提供具有高密度二相结构的溅射靶，并具有 铝含量为1ppm以下。 由于目标的高密度和高强度，溅射期间从目标产生颗粒减少，并且由于靶的碳含量降低，可以防止在溅射期间将碳混入薄膜中。

公开(公告)号：US5196916A

公开(公告)日：1993-03-23

申请号：US655950

申请日：1991-02-15

申请人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

发明人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

IPC分类号： C22B9/22 ,  C22B34/10 ,  C22B34/12 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

CPC分类号： C22B34/1272 ,  C22B34/10 ,  C22B34/129 ,  C22B34/1295 ,  C22B9/22 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/76841 ,  H01L23/53257 ,  H01L2924/0002

摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of not more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting the surface treated material with electron beam in a high vacuum.

公开(公告)号：US5679983A

公开(公告)日：1997-10-21

申请号：US454583

申请日：1995-05-31

申请人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

发明人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

IPC分类号： C22B9/22 ,  C22B34/10 ,  C22B34/12 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： C22B34/1272 ,  C22B34/10 ,  C22B34/129 ,  C22B34/1295 ,  C22B9/22 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/76841 ,  H01L23/53257 ,  H01L2924/0002

摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.

摘要翻译： 这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。 高纯度金属的Al含量不大于10ppm。 氧含量大于250ppm，Fe，Ni和Cr的含量不大于10ppm，Na和K的含量不超过0.1ppm。 高纯度金属是通过用碘化法纯化粗金属或用粗金属表面处理去除存在于其表面上的污染层，然后在高真空中熔化具有电子束的表面处理材料而获得的。

公开(公告)号：US5470527A

公开(公告)日：1995-11-28

申请号：US302996

申请日：1994-09-12

申请人： Takashi Yamanobe ,  Michio Satou ,  Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Noriaki Yagi ,  Toshihiro Maki ,  Shigeru Ando

发明人： Takashi Yamanobe ,  Michio Satou ,  Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Noriaki Yagi ,  Toshihiro Maki ,  Shigeru Ando

IPC分类号： C23C14/14 ,  C23C14/34 ,  B22F3/10

CPC分类号： C23C14/3414

摘要： A sputtering target that consists essentially of a continuous matrix of Ti-W phase, Ti phase having a particle diameter of 50 .mu.m or less distributed in the matrix, and a W phase having a particle diameter of 20 .mu.m or less also distributed in the matrix. Preferably the target contains aluminum in the range of 1 ppm or less. The target has high density and a low impurity content, which reduces the generation of particles from the target when it is used for sputtering. A method of manufacturing the sputtering target is also disclosed.

摘要翻译： 基本上由Ti-W相的连续基体，分散在基体中的粒径为50μm以下的Ti相和粒径为20μm以下的W相组成的溅射靶也分布在 矩阵。 优选地，靶含有1ppm以下的铝。 目标具有高密度和低杂质含量，当用于溅射时，该靶减少了靶中的粒子的产生。 还公开了溅射靶的制造方法。

公开(公告)号：US07256031B2

公开(公告)日：2007-08-14

申请号：US10381434

申请日：2001-09-28

申请人： Tomoyuki Fukasawa ,  Chuhei Nojiri ,  Nobuo Matsuhashi ,  Koji Nishizawa ,  Kaoru Okakura ,  Takashi Yamanobe

发明人： Tomoyuki Fukasawa ,  Chuhei Nojiri ,  Nobuo Matsuhashi ,  Koji Nishizawa ,  Kaoru Okakura ,  Takashi Yamanobe

IPC分类号： C07H21/04 ,  C12N9/42 ,  C12N1/12 ,  C12N15/00 ,  C12P21/06

CPC分类号： C12Y302/01021 ,  A61K38/00 ,  C12N9/2445

摘要： The invention is to provide a novel β-glucosidase and a gene that codes for the enzyme, and to develop a technique of utilizing the β-glucosidase or a composition that contains the enzyme for processing plants or plant-derived substances.According to the invention, there are provided a novel enzyme showing a β-glucosidase activity and derived from filamentous fungi of the genus Acremonium, a gene that codes for the enzyme, a method of using the gene for expressing β-glucosidase, an enzyme composition that contains β-glucosidase, and a method of processing plants or plant-derived substances with the enzyme or the enzyme compositions.

摘要翻译： 本发明提供一种新的β-葡糖苷酶和编码该酶的基因，并开发利用β-葡糖苷酶的技术或含有用于加工植物或植物衍生物质的酶的组合物。 根据本发明，提供了一种显示β-葡糖苷酶活性的新型酶，其来自顶孢属的丝状真菌，编码该酶的基因，使用该基因表达β-葡糖苷酶的方法，酶组合物 其含有β-葡糖苷酶，以及用酶或酶组合物处理植物或植物衍生物质的方法。

公开(公告)号：US6127160A

公开(公告)日：2000-10-03

申请号：US142759

申请日：1998-09-14

申请人： Takashi Yamanobe ,  Manabu Watanabe ,  Toru Hamaya ,  Naomi Sumida ,  Kaoru Aoyagi ,  Takeshi Murakami

发明人： Takashi Yamanobe ,  Manabu Watanabe ,  Toru Hamaya ,  Naomi Sumida ,  Kaoru Aoyagi ,  Takeshi Murakami

IPC分类号： C12N9/42 ,  C12N15/56

CPC分类号： C12N9/2437

摘要： The object of the present invention is to analyze the amino acid sequence of the protein constituting the cellulase system, to clone the gene coding for the components of the cellulase system, and to establish a technique of inserting a clonal gene into the above strain thereby to produce cellulase having enhanced avicellase activity. The present invention relates to a protein having a part or the whole of the amino acid sequence depicted in the sequence listing under SEQ ID NO:1 and possessing cellulase activity, a DNA coding for the protein, an expression vector containing the DNA, a microorganism as transformed by the expression vector, and a process for producing a protein having enhanced cellulase activity by using the microorganism.

摘要翻译： PCT No.PCT / JP97 / 00824 Sec。 371日期：1998年9月14日 102（e）1998年9月14日PCT PCT 1997年3月14日PCT公布。 出版物WO97 / 33982 日本1997年9月18日本发明的目的是分析构成纤维素酶体系的蛋白质的氨基酸序列，克隆编码纤维素酶系统成分的基因，并建立将克隆基因插入 由此产生具有增强的avicellase活性的纤维素酶。 本发明涉及具有SEQ ID NO：1所示的序列表中具有纤维素酶活性的部分或全部氨基酸序列的蛋白质，编码该蛋白质的DNA，含有该DNA的表达载体，微生物 通过表达载体转化，以及通过使用微生物生产具有增强的纤维素酶活性的蛋白质的方法。