公开(公告)号：US5733427A

公开(公告)日：1998-03-31

申请号：US413898

申请日：1995-03-30

申请人： Michio Satou ,  Takashi Yamanobe ,  Mitsuo Kawai ,  Tatsuzo Kawaguchi ,  Kazuhiko Mitsuhashi ,  Toshiaki Mizutani

发明人： Michio Satou ,  Takashi Yamanobe ,  Mitsuo Kawai ,  Tatsuzo Kawaguchi ,  Kazuhiko Mitsuhashi ,  Toshiaki Mizutani

IPC分类号： C04B35/58 ,  C23C14/34 ,  B22F3/14

CPC分类号： C04B35/58092 ,  C04B35/645 ,  C04B35/65 ,  C23C14/3414

摘要： A sputtering target formed of a refractory metallic silicide having a composition MSi.sub.x including a mixture composition of an MSi.sub.2 phase in the form of particles (M: at least one refractory metal selected from a group consisting of W, Mo, Ti, Zr, Hf, Ni and Ta), and an Si phase provided as a matrix phase. Interface layers having a predetermined thickness are formed at the interfaces between the MSi.sub.2 phase and the Si phase. The value X in the composition formula MSi.sub.x is set to a range of 2.0 to 4.0, and the thickness of the interface layers formed between the MSi.sub.2 phase and the Si phase, the dispersion of the composition, the density ratio of the target, the electrical resistivity of the Si phase and the surface roughness are set to predetermined values. An uniform high-quality thin film in which a composition distribution is uniform can be manufactured stably by using this target.

摘要翻译： 由具有组成为MSix的难熔金属硅化物形成的溅射靶，所述组合物包括颗粒形式的MSi2相的混合组成（M：选自W，Mo，Ti，Zr，Hf， Ni和Ta）和作为基质相的Si相。 在MSi2相和Si相之间的界面处形成具有预定厚度的界面层。 组成式MSix中的值X设定在2.0〜4.0的范围内，形成在MSi2相和Si相之间的界面层的厚度，组成的分散性，靶的密度比，电 Si相的电阻率和表面粗糙度被设定为预定值。 通过使用该目标，可以稳定地制造组合物分布均匀的均匀的高品质薄膜。

公开(公告)号：US5447616A

公开(公告)日：1995-09-05

申请号：US166007

申请日：1993-12-14

申请人： Michio Satou ,  Takashi Yamanobe ,  Mitsuo Kawai ,  Tatsuzo Kawaguchi ,  Kazuhiko Mitsuhashi ,  Toshiaki Mizutani

发明人： Michio Satou ,  Takashi Yamanobe ,  Mitsuo Kawai ,  Tatsuzo Kawaguchi ,  Kazuhiko Mitsuhashi ,  Toshiaki Mizutani

IPC分类号： C04B35/58 ,  C23C14/34

CPC分类号： C04B35/58092 ,  C04B35/645 ,  C04B35/65 ,  C23C14/3414

摘要： A sputtering target formed of a refractory metallic silicide having a composition MSi.sub.x including a mixture composition of an MSi.sub.2 phase in the form of particles (M: at least one refractory metal selected from a group consisting of W, Mo, Ti, Zr, Hf, Ni and Ta), and an Si phase provided as a matrix phase. Interface layers having a predetermined thickness are formed at the interfaces between the MSi.sub.2 phase and the Si phase. The value X in the composition formula MSi.sub.x is set to a range of 2.0 to 4.0, and the thickness of the interface layers formed between the MSi.sub.2 phase and the Si phase, the dispersion of the composition, the density ratio of the target, the electrical resistivity of the Si phase and the surface roughness are set to predetermined values. An uniform high-quality thin film in which a composition distribution is uniform can be manufactured stably by using this target.

摘要翻译： 由具有组成为MSix的难熔金属硅化物形成的溅射靶，所述组合物包括颗粒形式的MSi2相的混合组成（M：选自W，Mo，Ti，Zr，Hf， Ni和Ta）和作为基质相的Si相。 在MSi2相和Si相之间的界面处形成具有预定厚度的界面层。 组成式MSix中的值X设定在2.0〜4.0的范围内，形成在MSi2相和Si相之间的界面层的厚度，组成的分散性，靶的密度比，电 Si相的电阻率和表面粗糙度被设定为预定值。 通过使用该目标，可以稳定地制造组合物分布均匀的均匀的高品质薄膜。

公开(公告)号：US5294321A

公开(公告)日：1994-03-15

申请号：US974317

申请日：1993-11-10

申请人： Michio Satou ,  Takashi Yamanobe ,  Mitsuo Kawai ,  Tatsuzo Kawaguchi ,  Kazuhiko Mitsuhashi ,  Toshiaki Mizutani

发明人： Michio Satou ,  Takashi Yamanobe ,  Mitsuo Kawai ,  Tatsuzo Kawaguchi ,  Kazuhiko Mitsuhashi ,  Toshiaki Mizutani

IPC分类号： C04B35/58 ,  C23C14/34

CPC分类号： C04B35/58092 ,  C04B35/645 ,  C04B35/65 ,  C23C14/3414

摘要： A sputtering target formed of a refractory metallic silicide having a composition MSi.sub.x including a mixture composition of an MSi.sub.2 phase in the form of particles (M: at least one refractory metal selected from a group consisting of W, Mo, Ti, Zr, Hf, Ni and Ta), and an Si phase provided as a matrix phase. Interface layers having a predetermined thickness are formed at the interfaces between the MSi.sub.2 phase and the Si phase. The value X in the composition formula MSi.sub.x is set to a range of 2.0 to 4.0, and the thickness of the interface layers formed between the MSi.sub.2 phase and the Si phase, the dispersion of the composition, the density ratio of the target, the electrical resistivity of the Si phase and the surface roughness are set to predetermined values. An uniform high-quality thin film in which a composition distribution is uniform can be manufactured stably by using this target.

摘要翻译： 由具有组成为MSix的难熔金属硅化物形成的溅射靶，所述组合物包括颗粒形式的MSi2相的混合组成（M：选自W，Mo，Ti，Zr，Hf， Ni和Ta）和作为基质相的Si相。 在MSi2相和Si相之间的界面处形成具有预定厚度的界面层。 组成式MSix中的值X设定在2.0〜4.0的范围内，形成在MSi2相和Si相之间的界面层的厚度，组成的分散性，靶的密度比，电 Si相的电阻率和表面粗糙度被设定为预定值。 通过使用该目标，可以稳定地制造组合物分布均匀的均匀的高品质薄膜。

公开(公告)号：US5458697A

公开(公告)日：1995-10-17

申请号：US351542

申请日：1994-12-07

申请人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

发明人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

IPC分类号： C22B9/22 ,  C22B34/10 ,  C22B34/12 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L21/477

CPC分类号： C22B34/1272 ,  C22B34/10 ,  C22B34/129 ,  C22B34/1295 ,  C22B9/22 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/76841 ,  H01L23/53257 ,  H01L2924/0002

摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.

摘要翻译： 这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。 高纯度金属的Al含量不大于10ppm。 氧含量大于250ppm，Fe，Ni和Cr的含量不大于10ppm，Na和K的含量不超过0.1ppm。 高纯度金属是通过用碘化法纯化粗金属或用粗金属表面处理去除存在于其表面上的污染层，然后在高真空中熔化具有电子束的表面处理材料而获得的。

公开(公告)号：US5418071A

公开(公告)日：1995-05-23

申请号：US12845

申请日：1993-02-04

申请人： Michio Satou ,  Takashi Yamanobe ,  Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi ,  Toshihiro Maki ,  Minoru Obata ,  Shigeru Ando

发明人： Michio Satou ,  Takashi Yamanobe ,  Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi ,  Toshihiro Maki ,  Minoru Obata ,  Shigeru Ando

IPC分类号： B22F3/14 ,  C04B35/58 ,  C22C1/05 ,  C23C14/06 ,  C23C14/34 ,  H01L21/28 ,  H01L21/285 ,  B22F7/06

CPC分类号： C04B35/58085 ,  C04B35/58092 ,  C04B35/645 ,  C04B35/65 ,  C23C14/3414 ,  Y10T428/12014 ,  Y10T428/12028 ,  Y10T428/12049 ,  Y10T428/12056

摘要： In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.

摘要翻译： 在本发明中，金属硅化物晶粒形成金属硅化物相的互连结构，形成Si相的Si晶粒不连续地分散在金属硅化物相之间，以提供具有高密度二相结构的溅射靶，并具有 铝含量为1ppm以下。 由于目标的高密度和高强度，溅射期间从目标产生颗粒减少，并且由于靶的碳含量降低，可以防止在溅射期间将碳混入薄膜中。

公开(公告)号：US5196916A

公开(公告)日：1993-03-23

申请号：US655950

申请日：1991-02-15

申请人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

发明人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

IPC分类号： C22B9/22 ,  C22B34/10 ,  C22B34/12 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

CPC分类号： C22B34/1272 ,  C22B34/10 ,  C22B34/129 ,  C22B34/1295 ,  C22B9/22 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/76841 ,  H01L23/53257 ,  H01L2924/0002

摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of not more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting the surface treated material with electron beam in a high vacuum.

公开(公告)号：US5470527A

公开(公告)日：1995-11-28

申请号：US302996

申请日：1994-09-12

申请人： Takashi Yamanobe ,  Michio Satou ,  Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Noriaki Yagi ,  Toshihiro Maki ,  Shigeru Ando

发明人： Takashi Yamanobe ,  Michio Satou ,  Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Noriaki Yagi ,  Toshihiro Maki ,  Shigeru Ando

IPC分类号： C23C14/14 ,  C23C14/34 ,  B22F3/10

CPC分类号： C23C14/3414

摘要： A sputtering target that consists essentially of a continuous matrix of Ti-W phase, Ti phase having a particle diameter of 50 .mu.m or less distributed in the matrix, and a W phase having a particle diameter of 20 .mu.m or less also distributed in the matrix. Preferably the target contains aluminum in the range of 1 ppm or less. The target has high density and a low impurity content, which reduces the generation of particles from the target when it is used for sputtering. A method of manufacturing the sputtering target is also disclosed.

摘要翻译： 基本上由Ti-W相的连续基体，分散在基体中的粒径为50μm以下的Ti相和粒径为20μm以下的W相组成的溅射靶也分布在 矩阵。 优选地，靶含有1ppm以下的铝。 目标具有高密度和低杂质含量，当用于溅射时，该靶减少了靶中的粒子的产生。 还公开了溅射靶的制造方法。

公开(公告)号：US5679983A

公开(公告)日：1997-10-21

申请号：US454583

申请日：1995-05-31

申请人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

发明人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

IPC分类号： C22B9/22 ,  C22B34/10 ,  C22B34/12 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： C22B34/1272 ,  C22B34/10 ,  C22B34/129 ,  C22B34/1295 ,  C22B9/22 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/76841 ,  H01L23/53257 ,  H01L2924/0002

摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.

摘要翻译： 这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。 高纯度金属的Al含量不大于10ppm。 氧含量大于250ppm，Fe，Ni和Cr的含量不大于10ppm，Na和K的含量不超过0.1ppm。 高纯度金属是通过用碘化法纯化粗金属或用粗金属表面处理去除存在于其表面上的污染层，然后在高真空中熔化具有电子束的表面处理材料而获得的。

公开(公告)号：US5612571A

公开(公告)日：1997-03-18

申请号：US512911

申请日：1995-08-09

申请人： Michio Satou ,  Takasi Yamanobe ,  Mituo Kawai ,  Tooru Komatu ,  Hiromi Shizu ,  Noriaki Yagi

发明人： Michio Satou ,  Takasi Yamanobe ,  Mituo Kawai ,  Tooru Komatu ,  Hiromi Shizu ,  Noriaki Yagi

IPC分类号： C04B35/58 ,  C23C14/34 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： C04B35/58085 ,  C04B35/58092 ,  C04B35/645 ,  C23C14/3414 ,  Y10S75/95

摘要： According to the present invention, metal silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and Si grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

摘要翻译： 根据本发明，金属硅化物晶粒以连接的方式彼此耦合以提供金属硅化物相，并且形成Si相的Si晶粒不连续地分散在金属硅化物相的间隙中，从而提供 高密度溅射靶的混合结构，并以小于100ppm的速度含有碳。 由于目标的高密度和高强度，可以减少溅射时的颗粒的产生，并且由于碳的含量降低，可以防止通过溅射形成的薄膜中的碳的混合。

公开(公告)号：US5236533A

公开(公告)日：1993-08-17

申请号：US777722

申请日：1991-10-16

申请人： Ryuusuke Imai ,  Michio Nashiwa ,  Yasuhiro Oomura ,  Ryouichi Matsuda ,  Michio Satou ,  Tamayuki Takeuchi

发明人： Ryuusuke Imai ,  Michio Nashiwa ,  Yasuhiro Oomura ,  Ryouichi Matsuda ,  Michio Satou ,  Tamayuki Takeuchi

IPC分类号： B05C1/08 ,  C09J5/00

CPC分类号： B05C1/086 ,  B05C1/0834 ,  B32B37/0038 ,  C09J5/00

摘要： A resin-sandwiched metal laminate, a process and apparatus for producing the same and a process for producing a resin film for the resin-sandwiched metal laminate are disclosed. The laminate comprises a pair of face and back metal sheets and a resin layer and is capable of passing electricity between the face and back metal sheets, the resin layer being composed of electroconductive filler-containing resin regions at the side edges of the resin layer in the width direction of the metal sheets and an electroconductive filler-free resin center region provided between the electroconductive filler-containing resin regions at the side edges.

摘要翻译： 公开了一种树脂夹层金属层压体，其制造方法和装置以及用于树脂夹层金属层压体的树脂膜的制造方法。 层压体包括一对面和背金属片和树脂层，并且能够在正面和背面金属片之间通过电力，树脂层由树脂层的侧边缘处的含导电填料的树脂区域构成 金属板的宽度方向和设置在侧边缘的含导电填料的树脂区域之间的不含导电填料的树脂中心区域。