公开(公告)号：US20230172069A1

公开(公告)日：2023-06-01

申请号：US17990904

申请日：2022-11-21

申请人： MicroInnovators Laboratory, Inc.

发明人： Akio KONISHI ,  Hiroaki KANAMORI

IPC分类号： H01L41/08 ,  H01L41/187 ,  H01L41/316 ,  H01L41/319 ,  C30B29/68 ,  C30B23/02 ,  C30B29/32 ,  C30B29/02

CPC分类号： H01L41/0815 ,  H01L41/187 ,  H01L41/1873 ,  H01L41/1876 ,  H01L41/316 ,  H01L41/319 ,  C30B29/68 ,  C30B23/025 ,  C30B29/32 ,  C30B29/02

摘要： A film structure comprises a substrate and a buffer film formed on the substrate. The substrate is a 36° to 48° rotated Y-cut Si substrate, or the substrate is a SOI substrate including a base substance made of the 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer, and a mirror index of a crystal plane of an upper surface of the SOI layer is equal to a mirror index of a crystal plane of an upper surface of the base substance. The buffer film includes ZrO2 epitaxially grown on the substrate.