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公开(公告)号：US11934609B2
公开(公告)日：2024-03-19
申请号：US17301080
申请日：2021-03-24
Applicant: Microchip Technology Incorporated
Inventor： Lei Zou
CPC classification number: G06F3/04166 , G05F3/205 , G05F3/262
Abstract: One or more embodiments relate to a multi-bias mode current conveyor. Such a current conveyor may include an input terminal, a reference terminal, an output terminal, a first and second cascoded current mirrors, and a biasing circuit. The first cascoded current mirror and a second cascoded current mirror may be arranged as a current conveyor that is configured to provide an output current that a mirror of an input current. The biasing circuit may be configured to provide a bias voltage selectively exhibiting a first voltage level or a second voltage level. The bias voltage may be provided at least partially responsive to a state of the input current. The biasing circuit may be arranged to apply the bias voltage to at least one of the first cascoded current mirror or the second cascoded current mirror.
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公开(公告)号：US20210333924A1
公开(公告)日：2021-10-28
申请号：US17301744
申请日：2021-04-13
Applicant: Microchip Technology Incorporated
Inventor： Torbjoern Loevseth Finnoey , Lei Zou
Abstract: A charge compensation circuit is disclosed that provides amplified charge cancellation. A touch controller is disclosed that includes such a charge compensation circuit and may realize improved immunity to baseline capacitance signals that are much larger than a change in capacitance due to proximity of an object. Such a charge compensation circuit may include a capacitor, a driver circuit arranged to apply a pulsed voltage signal to the capacitor, and a current conveyor having a programmable gain and arranged to amplify an initial charge generated by the capacitor in response to the pulsed voltage signal and provide an amplified charge to an output of the charge cancellation circuit.
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公开(公告)号：US20230353108A1
公开(公告)日：2023-11-02
申请号：US18306117
申请日：2023-04-24
Applicant: Microchip Technology Incorporated
Inventor： Lei Zou
CPC classification number: H03F3/45475 , H03F3/45273 , H03F1/486
Abstract: One or more examples relate to inverting current amplification and related touch systems. An apparatus includes a first transistor, a second transistor, and a feedback loop. The first transistor and the second transistor provide controlled current at the second transistor that is a copy of current at the first transistor when respective drain-source voltages of the first transistor and the second transistor are substantially equal. The feedback loop sets respective drain-source voltages of the first transistor and the second transistor to be substantially equal, wherein a responsiveness of the feedback loop is proportional to a set transconductance of the feedback loop.
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4.发明授权公开(公告)号：US11604539B2
公开(公告)日：2023-03-14
申请号：US17301744
申请日：2021-04-13
Applicant: Microchip Technology Incorporated
Inventor： Torbjoern Loevseth Finnoey , Lei Zou
Abstract: A charge compensation circuit is disclosed that provides amplified charge cancellation. A touch controller is disclosed that includes such a charge compensation circuit and may realize improved immunity to baseline capacitance signals that are much larger than a change in capacitance due to proximity of an object. Such a charge compensation circuit may include a capacitor, a driver circuit arranged to apply a pulsed voltage signal to the capacitor, and a current conveyor having a programmable gain and arranged to amplify an initial charge generated by the capacitor in response to the pulsed voltage signal and provide an amplified charge to an output of the charge cancellation circuit.
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公开(公告)号：US12174227B2
公开(公告)日：2024-12-24
申请号：US17653062
申请日：2022-03-01
Applicant: Microchip Technology Incorporated
Inventor： Lei Zou
Abstract: One or more examples relate to methods and apparatuses for measuring a voltage node. An example method may include providing, between an input of a measurement circuit and a voltage node associated with a higher voltage domain than the measurement circuit, a circuit including decoupled capacitors, the decoupled capacitors including at least a first capacitor and a second capacitor; generating, by the measurement circuit, a first digital value representing a voltage level related to a voltage level at the voltage node at least partially responsive to performing a measurement process utilizing the circuit; and generating, by a processor, a second digital value representing the voltage level at the voltage node at least partially responsive to the first digital value and a scaling factor, the scaling factor representing a pre-specified relationship between the voltage level represented by the first digital value and the voltage level at the voltage node.
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Patent Agency Ranking
公开(公告)号：US11552559B2
公开(公告)日：2023-01-10
申请号：US17318596
申请日：2021-05-12
Applicant: Microchip Technology Incorporated
Inventor： Lei Zou , Torbjoern Loevseth Finnoey
IPC: H02M3/07
Abstract: A charge pump cell for a charge pump is disclosed that may exhibit improved latch-up immunity. A circuit may be arranged at the charge pump cell to apply a voltage to a bulk contact of a charge transfer transistor of such a charge pump cell at least partially responsive to a relationship between a voltage at a first terminal of the charge transfer transistor and a voltage at a second terminal of the charge transfer transistor. A charge pump including one or more such charge pump cells may include a control loop that is configured to control a pumping signal at least partially responsive to a state of an output voltage of the charge pump.
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公开(公告)号：US20220317164A1
公开(公告)日：2022-10-06
申请号：US17653062
申请日：2022-03-01
Applicant: Microchip Technology Incorporated
Inventor： Lei Zou
Abstract: One or more examples relate to methods and apparatuses for measuring a voltage node. An example method may include providing, between an input of a measurement circuit and a voltage node associated with a higher voltage domain than the measurement circuit, a circuit including decoupled capacitors, the decoupled capacitors including at least a first capacitor and a second capacitor; generating, by the measurement circuit, a first digital value representing a voltage level related to a voltage level at the voltage node at least partially responsive to performing a measurement process utilizing the circuit; and generating, by a processor, a second digital value representing the voltage level at the voltage node at least partially responsive to the first digital value and a scaling factor, the scaling factor representing a pre-specified relationship between the voltage level represented by the first digital value and the voltage level at the voltage node.
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公开(公告)号：US20230299771A1
公开(公告)日：2023-09-21
申请号：US18180692
申请日：2023-03-08
Applicant: Microchip Technology Incorporated
Inventor： Viktor Aase , Lei Zou
IPC: H03K19/0185 , H03K17/96 , G06F3/041
CPC classification number: H03K19/018521 , H03K17/96 , G06F3/04164 , G06F3/0446
Abstract: One or more examples relate to voltage level shifting. An example apparatus may include first and second inputs, an output, and a circuit. The first and second inputs may receive compliments of a signal represented by first voltage levels. The output may provide the signal represented by second voltage levels. The circuit may change voltage levels utilized to represent the signal from first voltage levels to second voltage levels. The circuit may include cross-coupled first high voltage switches, a pair of series coupled switches, and a pair of voltage clamping switches. The cross-coupled first high voltage switches may selectively couple the output to a high voltage node responsive to a high voltage level of the signal. The pair of series coupled switches may comprising respective second high voltage switches, and the pair of series coupled switches may selectively couple the output to a first voltage supply. The pair of voltage clamping switches may increase OFF-resistance of the respective second high voltage switches of the pair of series coupled switches responsive to a low voltage level at the respective input.
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9.发明公开公开(公告)号：US20230231474A1
公开(公告)日：2023-07-20
申请号：US18152032
申请日：2023-01-09
Applicant: Microchip Technology Incorporated
Inventor： Lei Zou , Torbjoern Loevseth Finnoey
IPC: H02M3/07
CPC classification number: H02M3/07
Abstract: A charge pump cell for a charge pump is disclosed that may exhibit improved latch-up immunity. A circuit may be arranged at the charge pump cell to apply a voltage to a bulk contact of a charge transfer transistor of such a charge pump cell at least partially responsive to a relationship between a voltage at a first terminal of the charge transfer transistor and a voltage at a second terminal of the charge transfer transistor. A charge pump including one or more such charge pump cells may include a control loop that is configured to control a pumping signal at least partially responsive to a state of an output voltage of the charge pump.
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公开(公告)号：US20220035506A1
公开(公告)日：2022-02-03
申请号：US17301080
申请日：2021-03-24
Applicant: Microchip Technology Incorporated
Inventor： Lei Zou
Abstract: One or more embodiments relate to a multi-bias mode current conveyor. Such a current conveyor may include an input terminal, a reference terminal, an output terminal, a first and second cascoded current mirrors, and a biasing circuit. The first cascoded current mirror and a second cascoded current mirror may be arranged as a current conveyor that is configured to provide an output current that a mirror of an input current. The biasing circuit may be configured to provide a bias voltage selectively exhibiting a first voltage level or a second voltage level. The bias voltage may be provided at least partially responsive to a state of the input current. The biasing circuit may be arranged to apply the bias voltage to at least one of the first cascoded current mirror or the second cascoded current mirror.
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