公开(公告)号：US20140070419A1

公开(公告)日：2014-03-13

申请号：US14080629

申请日：2013-11-14

Applicant: Micron Technology, Inc.

Inventor： Andrey V. Zagrebelny ,  Chet E. Carter ,  Andrew D. Carswell

IPC: H01L29/45 ,  H01L21/283

CPC classification number: H01L29/45 ,  H01L21/283 ,  H01L21/3212 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/7684 ,  H01L23/53242 ,  H01L23/53295 ,  H01L45/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include constructions which have platinum-containing structures. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures and across metal oxide. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures, across a first material retaining the platinum-containing structures, and across metal oxide liners along sidewalls of the platinum-containing structures and directly between the platinum-containing structures and the first material. Some embodiments include methods of forming platinum-containing structures. In some embodiments, first material is formed across electrically conductive structures, and metal oxide is formed across the first material. Openings are formed to extend through the metal oxide and the first material to the electrically conductive structures. Platinum-containing material is formed within the openings and over the metal oxide. Chemical-mechanical polishing is utilized to form a planarized surface extending across the platinum-containing material and the metal oxide.

Abstract translation: 一些实施方案包括具有含铂结构的构造。 在一些实施方案中，所述结构可以具有穿过含铂结构并穿过金属氧化物的平坦化表面。 在一些实施方案中，所述构造可以具有穿过含铂结构的平坦化表面，穿过保持含铂结构的第一材料，以及沿着含铂结构的侧壁穿过金属氧化物衬垫并且直接在含铂的结构之间 结构和第一种材料。 一些实施方案包括形成含铂结构的方法。 在一些实施例中，跨越导电结构形成第一材料，并且跨越第一材料形成金属氧化物。 开口形成为延伸穿过金属氧化物和第一材料到导电结构。 在开口内和金属氧化物上形成含铂材料。 利用化学机械抛光来形成延伸穿过含铂材料和金属氧化物的平坦化表面。

公开(公告)号：US10573720B2

公开(公告)日：2020-02-25

申请号：US15677949

申请日：2017-08-15

Applicant: Micron Technology, Inc.

Inventor： Andrey V. Zagrebelny ,  Chet E. Carter ,  Andrew D. Carswell

IPC: H01L29/45 ,  H01L23/532 ,  H01L21/768 ,  H01L21/321 ,  H01L21/283 ,  H01L45/00

Abstract: Some embodiments include constructions which have platinum-containing structures. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures and across metal oxide. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures, across a first material retaining the platinum-containing structures, and across metal oxide liners along sidewalls of the platinum-containing structures and directly between the platinum-containing structures and the first material. Some embodiments include methods of forming platinum-containing structures. In some embodiments, first material is formed across electrically conductive structures, and metal oxide is formed across the first material. Openings are formed to extend through the metal oxide and the first material to the electrically conductive structures. Platinum-containing material is formed within the openings and over the metal oxide. Chemical-mechanical polishing is utilized to form a planarized surface extending across the platinum-containing material and the metal oxide.

公开(公告)号：US09755035B2

公开(公告)日：2017-09-05

申请号：US14080629

申请日：2013-11-14

Applicant: Micron Technology, Inc.

Inventor： Andrey V. Zagrebelny ,  Chet E. Carter ,  Andrew D. Carswell

IPC: H01L29/45 ,  H01L23/532 ,  H01L21/283 ,  H01L21/768 ,  H01L21/321 ,  H01L45/00

CPC classification number: H01L29/45 ,  H01L21/283 ,  H01L21/3212 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/7684 ,  H01L23/53242 ,  H01L23/53295 ,  H01L45/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include constructions which have platinum-containing structures. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures and across metal oxide. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures, across a first material retaining the platinum-containing structures, and across metal oxide liners along sidewalls of the platinum-containing structures and directly between the platinum-containing structures and the first material. Some embodiments include methods of forming platinum-containing structures. In some embodiments, first material is formed across electrically conductive structures, and metal oxide is formed across the first material. Openings are formed to extend through the metal oxide and the first material to the electrically conductive structures. Platinum-containing material is formed within the openings and over the metal oxide. Chemical-mechanical polishing is utilized to form a planarized surface extending across the platinum-containing material and the metal oxide.

公开(公告)号：US20230377928A1

公开(公告)日：2023-11-23

申请号：US17747446

申请日：2022-05-18

Applicant: Micron Technology, Inc.

Inventor： Andrew D. Carswell

IPC: H01L21/68 ,  H01L21/8234 ,  H01L21/48

CPC classification number: H01L21/68 ,  H01L21/823468 ,  H01L21/486

Abstract: Methods, apparatuses, and systems related to an apparatus with an alignment moat are described. An example apparatus includes a conductive material divided into first and second portions which include top surfaces connected to each other, respectively, a first spacer surrounding the first portion of the conductive material, and a second spacer surrounding the second portion of the conductive material, where the top surface of the first spacer and the top surface of the second spacer are indented from the top surface of the first portion and the top surface of the second portion, respectively, to define an alignment moat.

公开(公告)号：US20170345910A1

公开(公告)日：2017-11-30

申请号：US15677949

申请日：2017-08-15

Applicant: Micron Technology, Inc.

Inventor： Andrey V. Zagrebelny ,  Chet E. Carter ,  Andrew D. Carswell

IPC: H01L29/45 ,  H01L23/532 ,  H01L21/283 ,  H01L21/768 ,  H01L21/321 ,  H01L45/00

Abstract: Some embodiments include constructions which have platinum-containing structures. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures and across metal oxide. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures, across a first material retaining the platinum-containing structures, and across metal oxide liners along sidewalls of the platinum-containing structures and directly between the platinum-containing structures and the first material. Some embodiments include methods of forming platinum-containing structures. In some embodiments, first material is formed across electrically conductive structures, and metal oxide is formed across the first material. Openings are formed to extend through the metal oxide and the first material to the electrically conductive structures. Platinum-containing material is formed within the openings and over the metal oxide. Chemical-mechanical polishing is utilized to form a planarized surface extending across the platinum-containing material and the metal oxide.