公开(公告)号：US20150097139A1

公开(公告)日：2015-04-09

申请号：US14578755

申请日：2014-12-22

Applicant: Micron Technology, Inc.

Inventor： Donald L. Yates

IPC: C09K13/08

CPC classification number: C09K13/08 ,  B08B3/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  C11D7/08 ,  C11D7/10 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/02 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  Y10S438/948

Abstract: An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying a fluorine ion component, and the amounts of the fluorine ion component and an acid component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove the photoresist layer, leaving the underlying low-k dielectric layer essentially intact.

Abstract translation: 提供了用于清洁半导体晶片的表面的改进的组合物和方法。 该组合物可用于选择性地除去低k电介质材料，例如二氧化硅，覆盖低k电介质层的光致抗蚀剂层，或从晶片表面两层。 根据本发明配制组合物以从晶片的表面提供低k电介质和/或光致抗蚀剂的期望的去除速率。 通过改变氟离子成分以及氟离子成分和酸成分的量，并控制pH，可以配制组合物以实现期望的低k电介质去除速率，其范围从缓慢和受控于约 每分钟50至约1000埃，以每分钟大约1000埃的速度相对快速地除去低k电介质材料。 组合物也可以配制成选择性地除去光致抗蚀剂层，使底层的低k介电层基本上完整无缺。

公开(公告)号：US08969217B2

公开(公告)日：2015-03-03

申请号：US13948043

申请日：2013-07-22

Applicant: Micron Technology, Inc.

Inventor： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashant Raghu ,  Kyle Grant

IPC: H01L21/302 ,  H01L21/461 ,  C03C15/00 ,  C03C25/68 ,  B08B3/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/306

CPC classification number: H01L21/30604 ,  H01L21/02052 ,  H01L21/31111

Abstract: Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

Abstract translation: 一些实施方案包括处理半导体衬底的方法。 衬底可以暴露于连续变化的一个或多个条件。 条件可以包括温度梯度，一种或多种淬灭蚀刻剂的组合物的浓度梯度，有助于除去颗粒的pH梯度和/或一种或多种有助于除去颗粒的组合物的浓度梯度。 可以通过将半导体衬底放置在流动的漂洗溶液浴中来赋予连续变化的条件，浴中具有至少两条在其中提供漂洗溶液的进料管线。 供给管线中的一个可以处于第一状态，另一个可以处于与第一条件不同的第二条件。 可以改变通过每个进料管提供给浴的冲洗溶液的相对量，以连续地改变浴内的状态。

公开(公告)号：US20140103251A1

公开(公告)日：2014-04-17

申请号：US14142261

申请日：2013-12-27

Applicant: Micron Technology, Inc.

Inventor： Donald L. Yates

IPC: C09K13/08 ,  C11D7/50 ,  C09K13/00

CPC classification number: C09K13/08 ,  B08B3/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  C11D7/08 ,  C11D7/10 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/02 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  Y10S438/948

Abstract: An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying a fluorine ion component, and the amounts of the fluorine ion component and an acid component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be foimulated to selectively remove the photoresist layer, leaving the underlying low-k dielectric layer essentially intact.

Abstract translation: 提供了用于清洁半导体晶片的表面的改进的组合物和方法。 该组合物可用于选择性地除去低k电介质材料，例如二氧化硅，覆盖低k电介质层的光致抗蚀剂层，或从晶片表面两层。 根据本发明配制组合物以从晶片的表面提供低k电介质和/或光致抗蚀剂的期望的去除速率。 通过改变氟离子成分以及氟离子成分和酸成分的量，并控制pH，可以配制组合物以实现期望的低k电介质去除速率，其范围从缓慢和受控于约 每分钟50至约1000埃，以每分钟大约1000埃的速度相对快速地除去低k电介质材料。 该组合物也可以被模拟以选择性地除去光致抗蚀剂层，使底层的低k电介质层基本上完整无缺。

公开(公告)号：US08951433B2

公开(公告)日：2015-02-10

申请号：US14142261

申请日：2013-12-27

Applicant: Micron Technology, Inc.

Inventor： Donald L. Yates

IPC: C09K13/04 ,  C09K13/08 ,  B08B3/08 ,  C11D7/08 ,  C11D7/10 ,  C11D11/00 ,  G03F7/42 ,  H01L21/311 ,  C09K13/00 ,  C11D7/50

CPC classification number: C09K13/08 ,  B08B3/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  C11D7/08 ,  C11D7/10 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/02 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  Y10S438/948

Abstract: An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying a fluorine ion component, and the amounts of the fluorine ion component and an acid component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove the photoresist layer, leaving the underlying low-k dielectric layer essentially intact.

Abstract translation: 提供了用于清洁半导体晶片的表面的改进的组合物和方法。 该组合物可用于选择性地除去低k电介质材料，例如二氧化硅，覆盖低k电介质层的光致抗蚀剂层，或从晶片表面两层。 根据本发明配制组合物以从晶片的表面提供低k电介质和/或光致抗蚀剂的期望的去除速率。 通过改变氟离子成分以及氟离子成分和酸成分的量，并控制pH，可以配制组合物以实现期望的低k电介质去除速率，其范围从缓慢和受控于约 每分钟50至约1000埃，以每分钟大约1000埃的速度相对快速地除去低k电介质材料。 组合物也可以配制成选择性地除去光致抗蚀剂层，使底层的低k介电层基本上完整无缺。

公开(公告)号：US20130302995A1

公开(公告)日：2013-11-14

申请号：US13948043

申请日：2013-07-22

Applicant: Micron Technology, Inc.

Inventor： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashant Raghu ,  Kyle Grant

IPC: H01L21/306

CPC classification number: H01L21/30604 ,  H01L21/02052 ,  H01L21/31111

Abstract: Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

Abstract translation: 一些实施方案包括处理半导体衬底的方法。 衬底可以暴露于连续变化的一个或多个条件。 条件可以包括温度梯度，一种或多种淬灭蚀刻剂的组合物的浓度梯度，有助于除去颗粒的pH梯度和/或一种或多种有助于除去颗粒的组合物的浓度梯度。 可以通过将半导体衬底放置在流动的冲洗溶液浴中来赋予连续变化的条件，浴中具有至少两条在其中提供漂洗溶液的进料管线。 供给管线中的一个可以处于第一状态，另一个可以处于与第一条件不同的第二条件。 可以改变通过每个进料管提供给浴的冲洗溶液的相对量，以连续地改变浴内的状态。