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公开(公告)号:US20240038291A1
公开(公告)日:2024-02-01
申请号:US17973726
申请日:2022-10-26
Applicant: Micron Technology, Inc.
Inventor: Edmund J. Gieske , Sujeet Ayyapureddi , Niccolò Izzo
IPC: G11C11/4078 , G11C11/4096 , G11C11/4076
CPC classification number: G11C11/4078 , G11C11/4096 , G11C11/4076
Abstract: An apparatus can include a number of memory devices and a controller coupled to one or more of the number of memory devices. The controller can be configured to determine whether a quantity of row activations directed to a row of the memory devices exceeds a row hammer criterion. The controller can be configured to select, responsive to determining that the row hammer criterion is met, a row hammer mitigation response from a plurality of row hammer mitigation responses available for initiation. The controller can be configured to initiate the selected row hammer mitigation response.
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公开(公告)号:US20240036762A1
公开(公告)日:2024-02-01
申请号:US18227216
申请日:2023-07-27
Applicant: Micron Technology, Inc.
Inventor: Edmund J. Gieske , Cagdas Dirik , Elliott C. Cooper-Balis , Robert M. Walker , Amitava Majumdar , Sujeet Ayyapureddi , Yang Lu , Ameen D. Akel , Niccolò Izzo , Danilo Caraccio , Markus H. Geiger
IPC: G06F3/06 , G06F12/0802
CPC classification number: G06F3/0656 , G06F3/0604 , G06F3/0673 , G06F12/0802 , G06F2212/60
Abstract: Systems, apparatuses, and methods related to bloom filter implementation into a controller are described. A memory device is coupled to a memory controller. The memory controller is configured to implement a counting bloom filter, increment the counting bloom filter in response to a row activate command of the memory device, determine whether a value of the counting bloom filter exceeds a threshold value, and perform an action in response to the value exceeding the threshold value.
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公开(公告)号:US12067270B2
公开(公告)日:2024-08-20
申请号:US17946518
申请日:2022-09-16
Applicant: Micron Technology, Inc.
Inventor: Yang Lu , Sujeet Ayyapureddi , Edmund J. Gieske , Cagdas Dirik , Ameen D. Akel , Elliott C. Cooper-Balis , Amitava Majumdar , Robert M. Walker , Danilo Caraccio
IPC: G06F3/06
CPC classification number: G06F3/0632 , G06F3/0604 , G06F3/0679
Abstract: Systems, methods, and apparatus for memory device security and row hammer mitigation are described. A control mechanism may be implemented in a front-end and/or a back-end of a memory sub-system to refresh rows of the memory. A row activation command having a row address at control circuitry of a memory sub-system and incrementing a first count of a row counter corresponding to the row address stored in a content addressable memory (CAM) of the memory sub-system may be received. Control circuitry may determine whether the first count is greater than a row hammer threshold (RHT) minus a second count of a CAM decrease counter (CDC); the second count may be incremented each time the CAM is full. A refresh command to the row address may be issued when a determination is made that the first count is greater than the RHT minus the second count.
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公开(公告)号:US20240411466A1
公开(公告)日:2024-12-12
申请号:US18808887
申请日:2024-08-19
Applicant: Micron Technology, Inc.
Inventor: Yang Lu , Sujeet Ayyapureddi , Edmund J. Gieske , Cagdas Dirik , Ameen D. Akel , Elliott C. Cooper-Balis , Amitava Majumdar , Robert M. Walker , Danilo Caraccio
IPC: G06F3/06
Abstract: Systems, methods, and apparatus for memory device security and row hammer mitigation are described. A control mechanism may be implemented in a front-end and/or a back-end of a memory sub-system to refresh rows of the memory. A row activation command having a row address at control circuitry of a memory sub-system and incrementing a first count of a row counter corresponding to the row address stored in a content addressable memory (CAM) of the memory sub-system may be received. Control circuitry may determine whether the first count is greater than a row hammer threshold (RHT) minus a second count of a CAM decrease counter (CDC); the second count may be incremented each time the CAM is full. A refresh command to the row address may be issued when a determination is made that the first count is greater than the RHT minus the second count.
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公开(公告)号:US20230395126A1
公开(公告)日:2023-12-07
申请号:US18204786
申请日:2023-06-01
Applicant: Micron Technology, Inc.
Inventor: Edmund J. Gieske , Cagdas Dirik , Robert M. Walker
IPC: G11C11/4078 , G11C11/406
CPC classification number: G11C11/4078 , G11C11/40618
Abstract: An apparatus can include a number of memory devices and a controller coupled to one or more of the number of memory devices. The controller can include row hammer detection circuitry configured to receive signaling indicative of a row activation command having a row address, increment a row counter corresponding to the row address stored in a stored in a data structure in a register or storage device, determine whether the incremented row counter is greater than a row hammer threshold, and issue a row hammer mitigation command to mitigate row hammer.
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公开(公告)号:US20230393770A1
公开(公告)日:2023-12-07
申请号:US17946518
申请日:2022-09-16
Applicant: Micron Technology, Inc.
Inventor: Yang Lu , Sujeet Ayyapureddi , Edmund J. Gieske , Cagdas Dirik , Ameen D. Akel , Elliott C. Cooper-Balis , Amitava Majumdar , Robert M. Walker , Danilo Caraccio
IPC: G06F3/06
CPC classification number: G06F3/0632 , G06F3/0604 , G06F3/0679
Abstract: Systems, methods, and apparatus for memory device security and row hammer mitigation are described. A control mechanism may be implemented in a front-end and/or a back-end of a memory sub-system to refresh rows of the memory. A row activation command having a row address at control circuitry of a memory sub-system and incrementing a first count of a row counter corresponding to the row address stored in a content addressable memory (CAM) of the memory sub-system may be received. Control circuitry may determine whether the first count is greater than a row hammer threshold (RHT) minus a second count of a CAM decrease counter (CDC); the second count may be incremented each time the CAM is full. A refresh command to the row address may be issued when a determination is made that the first count is greater than the RHT minus the second count.
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