公开(公告)号：US20220375503A1

公开(公告)日：2022-11-24

申请号：US17882975

申请日：2022-08-08

Applicant: Micron Technology, Inc.

Inventor： Ting Luo ,  Tao Liu ,  Christopher J. Bueb ,  Eric Yuen ,  Cheng Cheng Ang

IPC: G11C7/04 ,  G11C7/10

Abstract: A method includes monitoring a temperature of a memory component of a memory sub-system to determine that the temperature of the memory component corresponds to a first monitored temperature value; writing data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the first monitored temperature value; determining that the first monitored temperature value exceeds a threshold temperature range; monitoring the temperature of the memory component of the memory sub-system to determine that the temperature of the memory component corresponds to a second monitored temperature value that is within the threshold temperature range; and rewriting the data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the second monitored temperature value.

公开(公告)号：US11640346B2

公开(公告)日：2023-05-02

申请号：US17882975

申请日：2022-08-08

Applicant: Micron Technology, Inc.

Inventor： Ting Luo ,  Tao Liu ,  Christopher J. Bueb ,  Eric Yuen ,  Cheng Cheng Ang

IPC: G06F11/00 ,  G06F11/30 ,  G06F11/07 ,  G11C7/04 ,  G11C11/406 ,  G11C7/10

Abstract: A method includes monitoring a temperature of a memory component of a memory sub-system to determine that the temperature of the memory component corresponds to a first monitored temperature value; writing data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the first monitored temperature value; determining that the first monitored temperature value exceeds a threshold temperature range; monitoring the temperature of the memory component of the memory sub-system to determine that the temperature of the memory component corresponds to a second monitored temperature value that is within the threshold temperature range; and rewriting the data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the second monitored temperature value.

公开(公告)号：US11442833B2

公开(公告)日：2022-09-13

申请号：US17085671

申请日：2020-10-30

Applicant: Micron Technology, Inc.

Inventor： Ting Luo ,  Tao Liu ,  Christopher J. Bueb ,  Eric Yuen ,  Cheng Cheng Ang

IPC: G06F11/00 ,  G06F11/30 ,  G06F11/07 ,  G11C7/04 ,  G11C11/406

Abstract: A method includes monitoring a temperature of a memory component of a memory sub-system to determine that the temperature of the memory component corresponds to a first monitored temperature value; writing data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the first monitored temperature value; determining that the first monitored temperature value exceeds a threshold temperature range; monitoring the temperature of the memory component of the memory sub-system to determine that the temperature of the memory component corresponds to a second monitored temperature value that is within the threshold temperature range; and rewriting the data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the second monitored temperature value.

公开(公告)号：US20220138073A1

公开(公告)日：2022-05-05

申请号：US17085671

申请日：2020-10-30

Applicant: Micron Technology, Inc.

Inventor： Ting Luo ,  Tao Liu ,  Christopher J. Bueb ,  Eric Yuen ,  Cheng Cheng Ang

IPC: G06F11/30 ,  G06F11/07

Abstract: A method includes monitoring a temperature of a memory component of a memory sub-system to determine that the temperature of the memory component corresponds to a first monitored temperature value; writing data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the first monitored temperature value; determining that the first monitored temperature value exceeds a threshold temperature range; monitoring the temperature of the memory component of the memory sub-system to determine that the temperature of the memory component corresponds to a second monitored temperature value that is within the threshold temperature range; and rewriting the data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the second monitored temperature value.

公开(公告)号：US20210181940A1

公开(公告)日：2021-06-17

申请号：US16077175

申请日：2017-12-13

Applicant: Micron Technology, Inc.

Inventor： Zhao Cui ,  Eric Yuen ,  Guan Zhong Wang ,  Xinghui Duan ,  Hua Chen Li

IPC: G06F3/06 ,  G06F12/02

Abstract: Devices and techniques for variable width superblock addressing are described herein. A superblock width, specified in number of planes, is obtained. A superblock entry is created in a translation table of a NAND device. Here, the superblock entry may include a set of blocks, from the NAND device, that have the same block indexes across multiple die of the NAND device. The number of unique block indexes are equal to the number of planes and in different planes. A request, received from a requesting entity, is performed using the superblock entry. Performing the request includes providing a single instruction to multiple die of the NAND device and multiple data segments. Here, a data segment corresponds to a block in the set of blocks specified by a tuple of block index and die. A result of the request is then returned to the requesting entity.