公开(公告)号：US11004494B2

公开(公告)日：2021-05-11

申请号：US16267087

申请日：2019-02-04

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Kuo-Chen Wang ,  Martin C. Roberts ,  Diem Thy N. Tran ,  Hideki Gomi ,  Fredrick D. Fishburn ,  Srinivas Pulugurtha ,  Michel Koopmans ,  Eiji Hasunuma

IPC: G11C11/24 ,  G11C11/402 ,  H01L27/108 ,  G11C5/06 ,  G11C11/4097 ,  G11C5/02 ,  G11C8/14

Abstract: Some embodiments include an assembly having active material structures arranged in an array having rows and columns. Each of the active material structures has a first side which includes a bit contact region, and has a second side which includes a cell contact region. Each of the bit contact regions is coupled with a first redistribution pad. Each of the cell contact regions is coupled with a second redistribution pad. The first redistribution pads are coupled with bitlines, and the second redistribution pads are coupled with programmable devices. Some embodiments include methods of forming memory arrays.

公开(公告)号：US20190172517A1

公开(公告)日：2019-06-06

申请号：US16267087

申请日：2019-02-04

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Kuo-Chen Wang ,  Martin C. Roberts ,  Diem Thy N. Tran ,  Hideki Gomi ,  Fredrick D. Fishburn ,  Srinivas Pulugurtha ,  Michel Koopmans ,  Eiji Hasunuma

IPC: G11C11/402 ,  G11C5/06 ,  H01L27/108

Abstract: Some embodiments include an assembly having active material structures arranged in an array having rows and columns. Each of the active material structures has a first side which includes a bit contact region, and has a second side which includes a cell contact region. Each of the bit contact regions is coupled with a first redistribution pad. Each of the cell contact regions is coupled with a second redistribution pad. The first redistribution pads are coupled with bitlines, and the second redistribution pads are coupled with programmable devices. Some embodiments include methods of forming memory arrays.

公开(公告)号：US10242726B1

公开(公告)日：2019-03-26

申请号：US16180542

申请日：2018-11-05

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Kuo-Chen Wang ,  Martin C. Roberts ,  Diem Thy N. Tran ,  Hideki Gomi ,  Fredrick D. Fishburn ,  Srinivas Pulugurtha ,  Michel Koopmans ,  Eiji Hasunuma

IPC: G11C11/24 ,  G11C11/402 ,  H01L27/108 ,  G11C5/06

Abstract: Some embodiments include an assembly having active material structures arranged in an array having rows and columns. Each of the active material structures has a first side which includes a bit contact region, and has a second side which includes a cell contact region. Each of the bit contact regions is coupled with a first redistribution pad. Each of the cell contact regions is coupled with a second redistribution pad. The first redistribution pads are coupled with bitlines, and the second redistribution pads are coupled with programmable devices. Some embodiments include methods of forming memory arrays.

公开(公告)号：US10153027B1

公开(公告)日：2018-12-11

申请号：US16106617

申请日：2018-08-21

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Kuo-Chen Wang ,  Martin C. Roberts ,  Diem Thy N. Tran ,  Hideki Gomi ,  Fredrick D. Fishburn ,  Srinivas Pulugurtha ,  Michel Koopmans ,  Eiji Hasunuma

IPC: H01L27/118 ,  G11C11/402 ,  G11C5/06 ,  H01L27/108

Abstract: Some embodiments include an assembly having active material structures arranged in an array having rows and columns. Each of the active material structures has a first side which includes a bit contact region, and has a second side which includes a cell contact region. Each of the bit contact regions is coupled with a first redistribution pad. Each of the cell contact regions is coupled with a second redistribution pad. The first redistribution pads are coupled with bitlines, and the second redistribution pads are coupled with programmable devices. Some embodiments include methods of forming memory arrays.

公开(公告)号：US10083734B1

公开(公告)日：2018-09-25

申请号：US15804981

申请日：2017-11-06

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Kuo-Chen Wang ,  Martin C. Roberts ,  Diem Thy N. Tran ,  Hideki Gomi ,  Fredrick D. Fishburn ,  Srinivas Pulugurtha ,  Michel Koopmans ,  Eiji Hasunuma

IPC: G11C11/24 ,  G11C11/402 ,  H01L27/108 ,  G11C5/06

CPC classification number: G11C11/4023 ,  G11C5/025 ,  G11C5/063 ,  G11C8/14 ,  G11C11/4097 ,  G11C2207/105 ,  H01L27/10805 ,  H01L27/10814 ,  H01L27/10847 ,  H01L27/10855 ,  H01L27/10885

Abstract: Some embodiments include an assembly having active material structures arranged in an array having rows and columns. Each of the active material structures has a first side which includes a bit contact region, and has a second side which includes a cell contact region. Each of the bit contact regions is coupled with a first redistribution pad. Each of the cell contact regions is coupled with a second redistribution pad. The first redistribution pads are coupled with bitlines, and the second redistribution pads are coupled with programmable devices. Some embodiments include methods of forming memory arrays.