公开(公告)号：US10651155B2

公开(公告)日：2020-05-12

申请号：US16122280

申请日：2018-09-05

申请人： Micron Technology, Inc.

发明人： Jaspreet S. Gandhi ,  Michel Koopmans

IPC分类号： H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L23/367 ,  H01L23/48 ,  H01L21/768

摘要： Systems and methods are described for improved heat dissipation of the stacked semiconductor dies by including metallic thermal pads between the dies in the stack. In one embodiment, the thermal pads may be in direct contact with the semiconductor dies. Heat dissipation of the semiconductor die stack can be improved by a relatively high thermal conductivity of the thermal pads that directly contact the adjacent silicon dies in the stack without the intervening layers of the low thermal conductivity materials (e.g., passivation materials). In some embodiments, the manufacturing yield of the stack can be improved by having generally coplanar top surfaces of the thermal pads and under-bump metallization (UBM) structures.

公开(公告)号：US10481200B2

公开(公告)日：2019-11-19

申请号：US16177917

申请日：2018-11-01

申请人： Micron Technology, Inc.

发明人： Jaspreet S. Gandhi ,  Michel Koopmans ,  James M. Derderian

IPC分类号： G01R31/00 ,  G01R31/28 ,  G01R1/073

摘要： Apparatus for testing semiconductor devices comprising die stacks, the apparatus comprising a substrate having an array of pockets in a surface thereof arranged to correspond to conductive elements protruding from a semiconductor device to be tested. The pockets include conductive contacts with traces extending to conductive pads, which may be configured as test pads, jumper pads, edge connects or contact pads. The substrate may comprise a semiconductor wafer or wafer segment and, if the latter, multiple segments may be received in recesses in a fixture. Testing may be effected using a probe card, a bond head carrying conductive pins, or through conductors carried by the fixture.

公开(公告)号：US10269782B2

公开(公告)日：2019-04-23

申请号：US16048037

申请日：2018-07-27

申请人： MICRON TECHNOLOGY, INC.

发明人： Michel Koopmans

IPC分类号： H01L25/00 ,  H01L23/00 ,  H01L25/18 ,  H01L21/683 ,  H01L21/66 ,  H01L21/78

摘要： Apparatuses and methods for forming die stacks are disclosed herein. An example method includes dispensing a temporary adhesive onto a substrate, placing a base die onto the temporary adhesive, curing the temporary adhesive, forming a die stack that includes the base die, activating a release layer disposed on the substrate, wherein the release layer is between the substrate and the temporary adhesive, removing the die stack from the substrate, and removing the temporary adhesive from the die stack.

公开(公告)号：US10096579B2

公开(公告)日：2018-10-09

申请号：US15683336

申请日：2017-08-22

申请人： Micron Technology, Inc.

发明人： Jaspreet S. Gandhi ,  Michel Koopmans

IPC分类号： H01L21/00 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00

摘要： Systems and methods are described for improved heat dissipation of the stacked semiconductor dies by including metallic thermal pads between the dies in the stack. In one embodiment, the thermal pads may be in direct contact with the semiconductor dies. Heat dissipation of the semiconductor die stack can be improved by a relatively high thermal conductivity of the thermal pads that directly contact the adjacent silicon dies in the stack without the intervening layers of the low thermal conductivity materials (e.g., passivation materials). In some embodiments, the manufacturing yield of the stack can be improved by having generally coplanar top surfaces of the thermal pads and under-bump metallization (UBM) structures.

公开(公告)号：US20170352645A1

公开(公告)日：2017-12-07

申请号：US15683336

申请日：2017-08-22

申请人： Micron Technology, Inc.

发明人： Jaspreet S. Gandhi ,  Michel Koopmans

IPC分类号： H01L25/065 ,  H01L25/00 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/3677 ,  H01L23/481 ,  H01L24/03 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05147 ,  H01L2224/06102 ,  H01L2224/06519 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13025 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/17519 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/01022 ,  H01L2924/01074 ,  H01L2924/07025 ,  H01L2924/10253 ,  H01L2924/00012

摘要： Systems and methods are described for improved heat dissipation of the stacked semiconductor dies by including metallic thermal pads between the dies in the stack. In one embodiment, the thermal pads may be in direct contact with the semiconductor dies. Heat dissipation of the semiconductor die stack can be improved by a relatively high thermal conductivity of the thermal pads that directly contact the adjacent silicon dies in the stack without the intervening layers of the low thermal conductivity materials (e.g., passivation materials). In some embodiments, the manufacturing yield of the stack can be improved by having generally coplanar top surfaces of the thermal pads and under-bump metallization (UBM) structures.

公开(公告)号：US09379091B2

公开(公告)日：2016-06-28

申请号：US14464410

申请日：2014-08-20

申请人： Micron Technology, Inc.

发明人： Luke G. England ,  Paul A. Silvestri ,  Michel Koopmans

IPC分类号： H01L23/02 ,  H01L25/065 ,  H01L21/56 ,  H01L25/00 ,  H01L21/683 ,  H01L23/367 ,  H01L23/48 ,  H01L23/31 ,  H01L21/66 ,  H01L25/18 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L21/56 ,  H01L21/561 ,  H01L21/6836 ,  H01L22/10 ,  H01L22/32 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/05655 ,  H01L2224/11332 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00

摘要： Methods of fabricating multi-die assemblies including a wafer segment having no integrated circuitry thereon and having a plurality of vertically stacked dice thereon electrically interconnected by conductive through vias, resulting multi-die assemblies, and semiconductor devices comprising such multi-die assemblies. The wafer segment may function as a heat sink to enhance heat transfer from the stacked dice in the resulting multi-die assembly. The die stacks are fabricated at the wafer level on a base wafer, from which the wafer segment and die stacks are singulated after at least peripheral encapsulation.

摘要翻译： 制造多模组件的方法，其包括在其上没有集成电路并且具有多个垂直堆叠的骰子的晶片片段，其上通过导电通孔，所得到的多骰子组件和包括这种多模组件的半导体器件电连接。 晶片段可以用作散热器，以增强在所得到的多模组件中从堆叠的骰子的热传递。 芯片堆叠在基底晶片上的晶片级制造，晶片段和管芯堆叠至少在至少外围封装之后被分割。

公开(公告)号：US20160181125A1

公开(公告)日：2016-06-23

申请号：US15059076

申请日：2016-03-02

申请人： Micron Technology, Inc.

发明人： Jian Li ,  Steven K. Groothuis ,  Michel Koopmans

IPC分类号： H01L21/48 ,  H01L23/42 ,  H01L21/56 ,  H01L23/373 ,  H01L25/00 ,  H01L23/00

CPC分类号： H01L21/4882 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/3731 ,  H01L23/3738 ,  H01L23/42 ,  H01L23/4275 ,  H01L23/4334 ,  H01L23/49827 ,  H01L23/5385 ,  H01L24/09 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16257 ,  H01L2924/1431 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/15311

摘要： Stacked semiconductor die assemblies with thermal spacers and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a thermally conductive casing defining a cavity, a stack of first semiconductor dies within the cavity, and a second semiconductor die stacked relative to the stack of first dies and carried by a package substrate. The semiconductor die assembly further includes a thermal spacer disposed between the package substrate and the thermally conductive casing. The thermal spacer can include a semiconductor substrate and plurality of conductive vias extending through the semiconductor substrate and electrically coupled to the stack of first semiconductor dies, the second semiconductor die, and the package substrate.

公开(公告)号：US20150279828A1

公开(公告)日：2015-10-01

申请号：US14231101

申请日：2014-03-31

申请人： Micron Technology, Inc.

发明人： Michel Koopmans ,  Shijian Luo ,  David R. Hembree

IPC分类号： H01L25/18 ,  H01L23/00 ,  H01L25/00 ,  H01L23/34

CPC分类号： H01L25/0652 ,  H01L23/3675 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/5226 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/15156 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/16152 ,  H01L2924/16251 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/014 ,  H01L2924/01047

摘要： Stacked semiconductor die assemblies with improved thermal performance and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a stack of semiconductor dies and a thermally conductive casing at least partially enclosing the stack of semiconductor dies within an enclosure. A package substrate carries the thermally conductive casing, and an interposer is disposed between the thermally conductive casing and the stack of semiconductor dies. A peripheral portion of the interposer extends laterally beyond the stack of semiconductor dies and is coupled to a plurality of conductive members interposed between the peripheral portion and the package substrate.

摘要翻译： 本文公开了具有改进的热性能和相关联的系统和方法的堆叠的半导体管芯组件。 在一个实施例中，半导体管芯组件可以包括半导体管芯堆叠和至少部分地围绕外壳内的半导体管芯堆叠的导热外壳。 封装衬底承载导热壳体，并且插入件设置在导热壳体和半导体管芯堆叠之间。 插入器的周边部分横向延伸超过半导体管芯堆叠，并且被连接到插入在周边部分和封装衬底之间的多个导电构件。

公开(公告)号：US10242726B1

公开(公告)日：2019-03-26

申请号：US16180542

申请日：2018-11-05

申请人： Micron Technology, Inc.

发明人： Sanh D. Tang ,  Kuo-Chen Wang ,  Martin C. Roberts ,  Diem Thy N. Tran ,  Hideki Gomi ,  Fredrick D. Fishburn ,  Srinivas Pulugurtha ,  Michel Koopmans ,  Eiji Hasunuma

IPC分类号： G11C11/24 ,  G11C11/402 ,  H01L27/108 ,  G11C5/06

摘要： Some embodiments include an assembly having active material structures arranged in an array having rows and columns. Each of the active material structures has a first side which includes a bit contact region, and has a second side which includes a cell contact region. Each of the bit contact regions is coupled with a first redistribution pad. Each of the cell contact regions is coupled with a second redistribution pad. The first redistribution pads are coupled with bitlines, and the second redistribution pads are coupled with programmable devices. Some embodiments include methods of forming memory arrays.

公开(公告)号：US20190006323A1

公开(公告)日：2019-01-03

申请号：US16122280

申请日：2018-09-05

申请人： Micron Technology, Inc.

发明人： Jaspreet S. Gandhi ,  Michel Koopmans

IPC分类号： H01L25/065 ,  H01L23/367 ,  H01L23/00 ,  H01L25/00 ,  H01L23/48 ,  H01L21/768

摘要： Systems and methods are described for improved heat dissipation of the stacked semiconductor dies by including metallic thermal pads between the dies in the stack. In one embodiment, the thermal pads may be in direct contact with the semiconductor dies. Heat dissipation of the semiconductor die stack can be improved by a relatively high thermal conductivity of the thermal pads that directly contact the adjacent silicon dies in the stack without the intervening layers of the low thermal conductivity materials (e.g., passivation materials). In some embodiments, the manufacturing yield of the stack can be improved by having generally coplanar top surfaces of the thermal pads and under-bump metallization (UBM) structures.