公开(公告)号：US11848299B2

公开(公告)日：2023-12-19

申请号：US17971889

申请日：2022-10-24

Applicant: Micron Technology, Inc.

Inventor： Owen R. Fay ,  Madison E. Wale ,  James L Voelz ,  Dylan W. Southern

IPC: H01L23/00 ,  H01L25/18 ,  H01L23/13 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L24/48 ,  H01L23/13 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/4824 ,  H01L2224/48105 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06586 ,  H01L2924/1515 ,  H01L2924/182

Abstract: Systems and methods for a semiconductor device having an edge-notched substrate are provided. The device generally includes a substrate having a front side, a backside having substrate contacts, and an inward notch at an edge of the substrate. The device includes a die having an active side attached to the front side of the substrate and positioned such that bond pads of the die are accessible from the backside of the substrate through the inward notch. The device includes wire bonds routed through the inward notch and electrically coupling the bond pads of the die to the substrate contacts. The device may further include a second die having an active side attached to the backside of the first die and positioned laterally offset from the first die such that the second bond pads are accessible by wire bonds around the edge of the first die and through the inward notch.