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公开(公告)号:US11848299B2
公开(公告)日:2023-12-19
申请号:US17971889
申请日:2022-10-24
Applicant: Micron Technology, Inc.
Inventor: Owen R. Fay , Madison E. Wale , James L Voelz , Dylan W. Southern
IPC: H01L23/00 , H01L25/18 , H01L23/13 , H01L25/065 , H01L25/00
CPC classification number: H01L24/48 , H01L23/13 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2224/4824 , H01L2224/48105 , H01L2225/0651 , H01L2225/06562 , H01L2225/06586 , H01L2924/1515 , H01L2924/182
Abstract: Systems and methods for a semiconductor device having an edge-notched substrate are provided. The device generally includes a substrate having a front side, a backside having substrate contacts, and an inward notch at an edge of the substrate. The device includes a die having an active side attached to the front side of the substrate and positioned such that bond pads of the die are accessible from the backside of the substrate through the inward notch. The device includes wire bonds routed through the inward notch and electrically coupling the bond pads of the die to the substrate contacts. The device may further include a second die having an active side attached to the backside of the first die and positioned laterally offset from the first die such that the second bond pads are accessible by wire bonds around the edge of the first die and through the inward notch.
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公开(公告)号:US20240321822A1
公开(公告)日:2024-09-26
申请号:US18668777
申请日:2024-05-20
Applicant: Micron Technology, Inc.
Inventor: Owen R. Fay , Madison E. Wale , James L. Voelz , Dylan W. Southern , Dustin L. Holloway
IPC: H01L23/00
CPC classification number: H01L24/82 , H01L24/20 , H01L24/29 , H01L24/45 , H01L24/83 , H01L24/85 , H01L2224/82203 , H01L2924/1431 , H01L2924/1434
Abstract: Semiconductor devices having redistribution structures, and associated systems and methods, are disclosed herein. In some embodiments, a semiconductor assembly comprises a die stack including a plurality of semiconductor dies, and a routing substrate mounted on the die stack. The routing substrate includes an upper surface having a redistribution structure. The semiconductor assembly also includes a plurality of electrical connectors coupling the redistribution structure to at least some of the semiconductor dies. The semiconductor assembly further includes a controller die mounted on the routing substrate. The controller die includes an active surface that faces the upper surface of the routing substrate and is electrically coupled to the redistribution structure, such that the routing substrate and the semiconductor dies are electrically coupled to the controller die via the redistribution structure.
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公开(公告)号:US11552045B2
公开(公告)日:2023-01-10
申请号:US17100610
申请日:2020-11-20
Applicant: Micron Technology, Inc.
Inventor: Owen R. Fay , Madison E. Wale , James L. Voelz , Dylan W. Southern , Dustin L. Holloway
IPC: H01L23/00
Abstract: Semiconductor devices having redistribution structures, and associated systems and methods, are disclosed herein. In some embodiments, a semiconductor assembly comprises a die stack including a plurality of semiconductor dies, and a routing substrate mounted on the die stack. The routing substrate includes an upper surface having a redistribution structure. The semiconductor assembly also includes a plurality of electrical connectors coupling the redistribution structure to at least some of the semiconductor dies. The semiconductor assembly further includes a controller die mounted on the routing substrate. The controller die includes an active surface that faces the upper surface of the routing substrate and is electrically coupled to the redistribution structure, such that the routing substrate and the semiconductor dies are electrically coupled to the controller die via the redistribution structure.
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公开(公告)号:US20220084977A1
公开(公告)日:2022-03-17
申请号:US17023143
申请日:2020-09-16
Applicant: Micron Technology, Inc.
Inventor: Owen R. Fay , Madison E. Wale , James L. Voelz , Dylan W. Southern
IPC: H01L23/00 , H01L25/18 , H01L23/13 , H01L25/065 , H01L25/00
Abstract: Systems and methods for a semiconductor device having an edge-notched substrate are provided. The device generally includes a substrate having a front side, a backside having substrate contacts, and an inward notch at an edge of the substrate. The device includes a die having an active side attached to the front side of the substrate and positioned such that bond pads of the die are accessible from the backside of the substrate through the inward notch. The device includes wire bonds routed through the inward notch and electrically coupling the bond pads of the die to the substrate contacts. The device may further include a second die having an active side attached to the backside of the first die and positioned laterally offset from the first die such that the second bond pads are accessible by wire bonds around the edge of the first die and through the inward notch.
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公开(公告)号:US20230145473A1
公开(公告)日:2023-05-11
申请号:US18094320
申请日:2023-01-06
Applicant: Micron Technology, Inc.
Inventor: Owen R. Fay , Madison E. Wale , James L. Voelz , Dylan W. Southern , Dustin L. Holloway
IPC: H01L23/00
CPC classification number: H01L24/82 , H01L24/20 , H01L24/29 , H01L24/45 , H01L24/83 , H01L24/85 , H01L2224/82203 , H01L2924/1431 , H01L2924/1434
Abstract: Semiconductor devices having redistribution structures, and associated systems and methods, are disclosed herein. In some embodiments, a semiconductor assembly comprises a die stack including a plurality of semiconductor dies, and a routing substrate mounted on the die stack. The routing substrate includes an upper surface having a redistribution structure. The semiconductor assembly also includes a plurality of electrical connectors coupling the redistribution structure to at least some of the semiconductor dies. The semiconductor assembly further includes a controller die mounted on the routing substrate. The controller die includes an active surface that faces the upper surface of the routing substrate and is electrically coupled to the redistribution structure, such that the routing substrate and the semiconductor dies are electrically coupled to the controller die via the redistribution structure.
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公开(公告)号:US11482504B2
公开(公告)日:2022-10-25
申请号:US17023143
申请日:2020-09-16
Applicant: Micron Technology, Inc.
Inventor: Owen R. Fay , Madison E. Wale , James L. Voelz , Dylan W. Southern
IPC: H01L23/00 , H01L25/18 , H01L23/13 , H01L25/065 , H01L25/00
Abstract: Systems and methods for a semiconductor device having an edge-notched substrate are provided. The device generally includes a substrate having a front side, a backside having substrate contacts, and an inward notch at an edge of the substrate. The device includes a die having an active side attached to the front side of the substrate and positioned such that bond pads of the die are accessible from the backside of the substrate through the inward notch. The device includes wire bonds routed through the inward notch and electrically coupling the bond pads of the die to the substrate contacts. The device may further include a second die having an active side attached to the backside of the first die and positioned laterally offset from the first die such that the second bond pads are accessible by wire bonds around the edge of the first die and through the inward notch.
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公开(公告)号:US11990446B2
公开(公告)日:2024-05-21
申请号:US18094320
申请日:2023-01-06
Applicant: Micron Technology, Inc.
Inventor: Owen R. Fay , Madison E. Wale , James L. Voelz , Dylan W. Southern , Dustin L. Holloway
IPC: H01L23/00
CPC classification number: H01L24/82 , H01L24/20 , H01L24/29 , H01L24/45 , H01L24/83 , H01L24/85 , H01L2224/82203 , H01L2924/1431 , H01L2924/1434
Abstract: Semiconductor devices having redistribution structures, and associated systems and methods, are disclosed herein. In some embodiments, a semiconductor assembly comprises a die stack including a plurality of semiconductor dies, and a routing substrate mounted on the die stack. The routing substrate includes an upper surface having a redistribution structure. The semiconductor assembly also includes a plurality of electrical connectors coupling the redistribution structure to at least some of the semiconductor dies. The semiconductor assembly further includes a controller die mounted on the routing substrate. The controller die includes an active surface that faces the upper surface of the routing substrate and is electrically coupled to the redistribution structure, such that the routing substrate and the semiconductor dies are electrically coupled to the controller die via the redistribution structure.
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公开(公告)号:US20230045144A1
公开(公告)日:2023-02-09
申请号:US17971889
申请日:2022-10-24
Applicant: Micron Technology, Inc.
Inventor: Owen R. Fay , Madison E. Wale , James L. Voelz , Dylan W. Southern
IPC: H01L23/00 , H01L25/18 , H01L23/13 , H01L25/065 , H01L25/00
Abstract: Systems and methods for a semiconductor device having an edge-notched substrate are provided. The device generally includes a substrate having a front side, a backside having substrate contacts, and an inward notch at an edge of the substrate. The device includes a die having an active side attached to the front side of the substrate and positioned such that bond pads of the die are accessible from the backside of the substrate through the inward notch. The device includes wire bonds routed through the inward notch and electrically coupling the bond pads of the die to the substrate contacts. The device may further include a second die having an active side attached to the backside of the first die and positioned laterally offset from the first die such that the second bond pads are accessible by wire bonds around the edge of the first die and through the inward notch.
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