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1.发明申请公开(公告)号：US20190201945A1
公开(公告)日：2019-07-04
申请号：US15856373
申请日：2017-12-28
Applicant: Micron Technology, Inc.
Inventor： Ken Tokashiki , Gurtej S. Sandhu
Abstract: A method of cleaning a tool for forming a semiconductor device includes heating a wafer comprising a ceramic material to heat at least the ceramic material, positioning the heated wafer on an electrostatic chuck of a tool for forming a semiconductor device such that deposits located proximate the heated wafer are heated to vaporize at least some of the deposits, and removing the vaporized deposits from the tool. Related methods of forming semiconductor devices, related systems, and related cleaning wafers are disclosed.
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2.发明授权公开(公告)号：US10103196B2
公开(公告)日：2018-10-16
申请号：US15251867
申请日：2016-08-30
Applicant: Micron Technology, Inc.
Inventor： Ken Tokashiki
Abstract: Methods of forming a magnetic memory cell are disclosed. The method comprises forming a magnetic cell core material over a substrate, wherein forming the magnetic cell core comprises forming a first magnetic region over the substrate, forming a tunnel barrier material over the first magnetic region, and forming a second magnetic region over the tunnel barrier material. A temperature of at least one of the substrate or a wafer stage underlying the substrate is maintained at a temperature below about 0° C. and the magnetic cell core material is exposed to at least a first beam comprising one of an ion beam or a neutral beam comprising ions or elements of at least one noble gas to remove portions of the magnetic cell core material. Related magnetic memory cells and methods of forming an array of memory cells are also disclosed.
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3.发明授权公开(公告)号：US10766057B2
公开(公告)日：2020-09-08
申请号：US15856373
申请日：2017-12-28
Applicant: Micron Technology, Inc.
Inventor： Ken Tokashiki , Gurtej S. Sandhu
IPC: B08B9/00 , B08B7/00 , H01L21/67 , H01L21/683
Abstract: A method of cleaning a tool for forming a semiconductor device includes heating a wafer comprising a ceramic material to heat at least the ceramic material, positioning the heated wafer on an electrostatic chuck of a tool for forming a semiconductor device such that deposits located proximate the heated wafer are heated to vaporize at least some of the deposits, and removing the vaporized deposits from the tool. Related methods of forming semiconductor devices, related systems, and related cleaning wafers are disclosed.
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公开(公告)号：US20190206723A1
公开(公告)日：2019-07-04
申请号：US15858021
申请日：2017-12-29
Applicant: Micron Technology, Inc.
Inventor： Ken Tokashiki , John A. Smythe , Gurtej S. Sandhu
IPC: H01L21/768
CPC classification number: H01L21/76804 , H01L21/30655 , H01L21/76205 , H01L21/76816 , H01L21/76831 , H01L21/76843
Abstract: Methods of forming high aspect ratio openings. The method comprises removing a portion of a dielectric material at a temperature less than about 0° C. to form at least one opening in the dielectric material. The at least one opening comprises an aspect ratio of greater than about 30:1. A protective material is formed in the at least one opening and on sidewalls of the dielectric material at a temperature less than about 0° C. Methods of forming high aspect ratio features are also disclosed, as are semiconductor devices.
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公开(公告)号：US20190198333A1
公开(公告)日：2019-06-27
申请号：US15851178
申请日：2017-12-21
Applicant: Micron Technology, Inc.
Inventor： Ken Tokashiki
IPC: H01L21/3065 , H01J37/32 , H01L21/02 , H01L21/311 , H01L21/683 , H01L21/308
Abstract: Methods of processing a semiconductor device structure comprise cooling an electrostatic chuck (ESC) for the semiconductor device structure, which comprises tiers of alternating materials including at least one dielectric material, to a temperature of −30° C. or less, forming an opening in the semiconductor device structure with a plasma of a gas comprising a hydrogen-based gas and a fluorine-based gas in which the hydrogen-based gas comprises between about 10 vol % and 90 vol %. Other methods of processing a semiconductor device structure comprise cooling an ESC for the semiconductor device structure to a temperature of −30° C. or less, applying a low frequency radio frequency (RF) having a non-sinusoidal waveform to the ESC, and forming an opening in the semiconductor device structure with a generated plasma. A processing system includes an ESC, a coolant system, and a low frequency RF power source generating a non-sinusoidal waveform comprising a combination of multiple sinusoidal waveforms.
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Patent Agency Ranking
公开(公告)号：US20220344200A1
公开(公告)日：2022-10-27
申请号：US17811285
申请日：2022-07-07
Applicant: Micron Technology, Inc.
Inventor： Ken Tokashiki , John A. Smythe , Gurtej S. Sandhu
IPC: H01L21/768 , H01L21/3065 , H01L21/762 , H01L21/311
Abstract: Methods of forming high aspect ratio openings. The method comprises removing a portion of a dielectric material at a temperature less than about 0° C. to form at least one opening in the dielectric material. The at least one opening comprises an aspect ratio of greater than about 30:1. A protective material is formed in the at least one opening and on sidewalls of the dielectric material at a temperature less than about 0° C. Methods of forming high aspect ratio features are also disclosed, as are semiconductor devices.
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7.发明申请公开(公告)号：US20180061886A1
公开(公告)日：2018-03-01
申请号：US15251867
申请日：2016-08-30
Applicant: Micron Technology, Inc.
Inventor： Ken Tokashiki
CPC classification number: H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: Methods of forming a magnetic memory cell are disclosed. The method comprises forming a magnetic cell core material over a substrate, wherein forming the magnetic cell core comprises forming a first magnetic region over the substrate, forming a tunnel barrier material over the first magnetic region, and forming a second magnetic region over the tunnel barrier material. A temperature of at least one of the substrate or a wafer stage underlying the substrate is maintained at a temperature below about 0° C. and the magnetic cell core material is exposed to at least a first beam comprising one of an ion beam or a neutral beam comprising ions or elements of at least one noble gas to remove portions of the magnetic cell core material. Related magnetic memory cells and methods of forming an array of memory cells are also disclosed.
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8.发明授权公开(公告)号：US11417565B2
公开(公告)日：2022-08-16
申请号：US17155770
申请日：2021-01-22
Applicant: Micron Technology, Inc.
Inventor： Ken Tokashiki , John A. Smythe , Gurtej S. Sandhu
IPC: H01L21/768 , H01L21/3065 , H01L21/762 , H01L21/311
Abstract: Methods of forming high aspect ratio openings. The method comprises removing a portion of a dielectric material at a temperature less than about 0° C. to form at least one opening in the dielectric material. The at least one opening comprises an aspect ratio of greater than about 30:1. A protective material is formed in the at least one opening and on sidewalls of the dielectric material at a temperature less than about 0° C. Methods of forming high aspect ratio features are also disclosed, as are semiconductor devices.
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公开(公告)号：US10811267B2
公开(公告)日：2020-10-20
申请号：US15851178
申请日：2017-12-21
Applicant: Micron Technology, Inc.
Inventor： Ken Tokashiki
IPC: H01L21/3065 , H01J37/32 , H01L21/308 , H01L21/311 , H01L21/683 , H01L21/02 , H01L21/3213 , H01L21/67 , H01L27/11582
Abstract: Methods of processing a semiconductor device structure comprise cooling an electrostatic chuck (ESC) for the semiconductor device structure, which comprises tiers of alternating materials including at least one dielectric material, to a temperature of −30° C. or less, forming an opening in the semiconductor device structure with a plasma of a gas comprising a hydrogen-based gas and a fluorine-based gas in which the hydrogen-based gas comprises between about 10 vol % and 90 vol %. Other methods of processing a semiconductor device structure comprise cooling an ESC for the semiconductor device structure to a temperature of −30° C. or less, applying a low frequency radio frequency (RF) having a non-sinusoidal waveform to the ESC, and forming an opening in the semiconductor device structure with a generated plasma. A processing system includes an ESC, a coolant system, and a low frequency RF power source generating a non-sinusoidal waveform comprising a combination of multiple sinusoidal waveforms.
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公开(公告)号：US20190189687A1
公开(公告)日：2019-06-20
申请号：US16272483
申请日：2019-02-11
Applicant: Micron Technology, Inc
Inventor： Ken Tokashiki
CPC classification number: H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: Methods of forming a magnetic memory cell are disclosed. The method comprises forming a magnetic cell core material over a substrate, wherein forming the magnetic cell core comprises forming a first magnetic region over the substrate, forming a tunnel barrier material over the first magnetic region, and forming a second magnetic region over the tunnel barrier material. A temperature of at least one of the substrate or a wafer stage underlying the substrate is maintained at a temperature below about 0° C. and the magnetic cell core material is exposed to at least a first beam comprising one of an ion beam or a neutral beam comprising ions or elements of at least one noble gas to remove portions of the magnetic cell core material. Related magnetic memory cells and methods of forming an array of memory cells are also disclosed.
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