公开(公告)号：US20210202299A1

公开(公告)日：2021-07-01

申请号：US16780594

申请日：2020-02-03

Applicant: Micron Technology, Inc.

Inventor： Jukuan Zheng ,  Sri Sai Sivakumar Vegunta ,  Kevin L. Baker ,  Josiah Jebaraj Johnley Muthuraj ,  Efe S. Ege

IPC: H01L21/768 ,  H01L27/24 ,  H01L27/108 ,  H01L45/00 ,  H01L21/67

Abstract: Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.

公开(公告)号：US11735473B2

公开(公告)日：2023-08-22

申请号：US17524638

申请日：2021-11-11

Applicant: Micron Technology, Inc.

Inventor： Jukuan Zheng ,  Sri Sai Sivakumar Vegunta ,  Kevin L. Baker ,  Josiah Jebaraj Johnley Muthuraj ,  Efe S. Ege

IPC: H01L21/768 ,  H01L21/67 ,  G11C5/06 ,  H10B12/00 ,  H10B63/00 ,  H10N70/00

CPC classification number: H01L21/7684 ,  G11C5/06 ,  H01L21/67075 ,  H10B12/09 ,  H10B63/00 ,  H10N70/801 ,  H10N70/882 ,  H10N70/883

Abstract: Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.

公开(公告)号：US11201083B2

公开(公告)日：2021-12-14

申请号：US16780594

申请日：2020-02-03

Applicant: Micron Technology, Inc.

Inventor： Jukuan Zheng ,  Sri Sai Sivakumar Vegunta ,  Kevin L. Baker ,  Josiah Jebaraj Johnley Muthuraj ,  Efe S. Ege

IPC: H01L21/768 ,  H01L27/24 ,  H01L27/108 ,  H01L21/67 ,  H01L45/00 ,  G11C5/06

Abstract: Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.

公开(公告)号：US20220068702A1

公开(公告)日：2022-03-03

申请号：US17524638

申请日：2021-11-11

Applicant: Micron Technology, Inc.

Inventor： Jukuan Zheng ,  Sri Sai Sivakumar Vegunta ,  Kevin L. Baker ,  Josiah Jebaraj Johnley Muthuraj ,  Efe S. Ege

IPC: H01L21/768 ,  H01L27/24 ,  H01L27/108 ,  H01L21/67 ,  H01L45/00 ,  G11C5/06

Abstract: Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.