公开(公告)号：US09627501B2

公开(公告)日：2017-04-18

申请号：US14607733

申请日：2015-01-28

Applicant: Micron Technology, Inc.

Inventor： F. Daniel Gealy ,  Vishwanath Bhat ,  Cancheepuram V. Srividya ,  M. Noel Rocklein

IPC: H01L29/51 ,  H01L49/02 ,  H01L29/78 ,  C23C16/455 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316

CPC classification number: H01L21/022 ,  C23C16/45529 ,  H01L21/02148 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40 ,  H01L28/56 ,  H01L29/517 ,  H01L29/78

Abstract: Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.

公开(公告)号：US20150137254A1

公开(公告)日：2015-05-21

申请号：US14607733

申请日：2015-01-28

Applicant: Micron Technology, Inc.

Inventor： F. Daniel Gealy ,  Vishwanath Bhat ,  Cancheepuram V. Srividya ,  M. Noel Rocklein

IPC: H01L29/51 ,  H01L49/02

CPC classification number: H01L21/022 ,  C23C16/45529 ,  H01L21/02148 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40 ,  H01L28/56 ,  H01L29/517 ,  H01L29/78

Abstract: Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.

Abstract translation: 梯度介电层和制造这种电介质层的方法在各种电子结构中提供电介质以用于广泛的电子设备和系统。 在一个实施例中，电介质层相对于跨介电层的掺杂分布而分级。 在一个实施例中，电介质层相对于介电层上的晶体结构分布呈梯度分布。 在一个实施例中，通过包含测序技术的原子层沉积形成电介质层以产生掺杂的电介质材料。