公开(公告)号：US12243620B2

公开(公告)日：2025-03-04

申请号：US18053626

申请日：2022-11-08

Applicant: Micron Technology, Inc.

Inventor： Mithun Kumar Ramasahayam ,  Michael J. Gossman

IPC: G11C7/18 ,  H01L29/06 ,  H10B41/20 ,  H10B41/35

Abstract: An electronic device that comprises bitlines and air gaps adjacent to an array region of an electronic device is disclosed. The bitlines comprise sloped sidewalls and a height of the air gaps is greater than a height of the bitlines. Additional electronic devices are disclosed, as are methods of forming an electronic device and related systems.

公开(公告)号：US11508421B2

公开(公告)日：2022-11-22

申请号：US17097494

申请日：2020-11-13

Applicant: Micron Technology, Inc.

Inventor： Mithun Kumar Ramasahayam ,  Michael J. Gossman

IPC: G11C7/18 ,  H01L29/06 ,  H01L27/11551 ,  H01L27/11524

Abstract: An electronic device that comprises bitlines and air gaps adjacent to an array region of an electronic device is disclosed. The bitlines comprise sloped sidewalls and a height of the air gaps is greater than a height of the bitlines. Additional electronic devices are disclosed, as are methods of forming an electronic device and related systems.

公开(公告)号：US20230063178A1

公开(公告)日：2023-03-02

申请号：US17564633

申请日：2021-12-29

Applicant: Micron Technology, Inc.

Inventor： Bo Zhao ,  Matthew J. King ,  Jason Reece ,  Michael J. Gossman ,  Shruthi Kumara Vadivel ,  Martin J. Barclay ,  Lifang Xu ,  Joel D. Peterson ,  Matthew Park ,  Adam L. Olson ,  David A. Kewley ,  Xiaosong Zhang ,  Justin B. Dorhout ,  Zhen Feng Yow ,  Kah Sing Chooi ,  Tien Minh Quan Tran ,  Biow Hiem Ong

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/768

Abstract: A microelectronic device includes a stack structure including a vertically alternating sequence of conductive structures and insulating structures arranged in tiers, a dielectric-filled opening vertically extending into the stack structure and defined between two internal sidewalls of the stack structure, a stadium structure within the stack structure and comprising steps defined by horizontal ends of at least some of the tiers, a first ledge extending upward from a first uppermost step of the steps of the stadium structure and interfacing with a first internal sidewall of the two internal sidewalls of the stack structure, and a second ledge extending upward from a second, opposite uppermost step of the steps of the stadium structure and interfacing with a second, opposite internal sidewall of the two internal sidewalls.

公开(公告)号：US11114379B2

公开(公告)日：2021-09-07

申请号：US15995475

申请日：2018-06-01

Applicant: Micron Technology, Inc.

Inventor： Michael J. Gossman ,  M. Jared Barclay ,  Matthew J. King ,  Eldon Nelson ,  Matthew Park ,  Jason Reece ,  Lifang Xu ,  Bo Zhao

IPC: H01L23/528 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11548 ,  H01L23/522 ,  H01L21/768 ,  H01L27/11575 ,  H01L27/11573 ,  H01L27/11529

Abstract: A method used in forming integrated circuitry comprises forming a stack of vertically-alternating tiers of different composition materials. A stair-step structure is formed into the stack and an upper landing is formed adjacent and above the stair-step structure. The stair-step structure is formed to comprise vertically-alternating tiers of the different composition materials. A plurality of stairs individually comprise two of the tiers of different composition materials. At least some of the stairs individually have only two tiers that are each only of a different one of the different composition materials. An upper of the stairs that is below the upper landing comprises at least four of the tiers of different composition materials. Structure independent of method is disclosed.

公开(公告)号：US20230081678A1

公开(公告)日：2023-03-16

申请号：US18053626

申请日：2022-11-08

Applicant: Micron Technology, Inc.

Inventor： Mithun Kumar Ramasahayam ,  Michael J. Gossman

IPC: G11C7/18 ,  H01L29/06 ,  H01L27/11551

Abstract: An electronic device that comprises bitlines and air gaps adjacent to an array region of an electronic device is disclosed. The bitlines comprise sloped sidewalls and a height of the air gaps is greater than a height of the bitlines. Additional electronic devices are disclosed, as are methods of forming an electronic device and related systems.

公开(公告)号：US20220157354A1

公开(公告)日：2022-05-19

申请号：US17097494

申请日：2020-11-13

Applicant: Micron Technology, Inc.

Inventor： Mithun Kumar Ramasahayam ,  Michael J. Gossman

IPC: G11C7/18 ,  H01L27/11551 ,  H01L29/06

Abstract: An electronic device that comprises bitlines and air gaps adjacent to an array region of an electronic device is disclosed. The bitlines comprise sloped sidewalls and a height of the air gaps is greater than a height of the bitlines. Additional electronic devices are disclosed, as are methods of forming an electronic device and related systems.