公开(公告)号：US11101171B2

公开(公告)日：2021-08-24

申请号：US16542507

申请日：2019-08-16

Applicant: Micron Technology, Inc.

Inventor： Xiaosong Zhang ,  Yongjun J. Hu ,  David A. Kewley ,  Md Zahid Hossain ,  Michael J. Irwin ,  Daniel Billingsley ,  Suresh Ramarajan ,  Robert J. Hanson ,  Biow Hiem Ong ,  Keen Wah Chow

IPC: H01L21/768

Abstract: An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.

公开(公告)号：US20210242131A1

公开(公告)日：2021-08-05

申请号：US16778346

申请日：2020-01-31

Applicant: Micron Technology, Inc.

Inventor： Biow Hiem Ong ,  David A. Daycock ,  Chieh Hsien Quek ,  Chii Wean Calvin Chen ,  Christian George Emor ,  Wing Yu Lo

IPC: H01L23/535 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522 ,  H01L27/11582 ,  H01L27/11556

Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

公开(公告)号：US20210050252A1

公开(公告)日：2021-02-18

申请号：US16542507

申请日：2019-08-16

Applicant: Micron Technology, Inc.

Inventor： Xiaosong Zhang ,  Yongjun J. Hu ,  David A. Kewley ,  Md Zahid Hossain ,  Michael J. Irwin ,  Daniel Billingsley ,  Suresh Ramarajan ,  Robert J. Hanson ,  Biow Hiem Ong ,  Keen Wah Chow

IPC: H01L21/768

Abstract: An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.

公开(公告)号：US20240321741A1

公开(公告)日：2024-09-26

申请号：US18427720

申请日：2024-01-30

Applicant: Micron Technology, Inc.

Inventor： Zhou Xuan ,  Sijia Yu ,  Biow Hiem Ong

IPC: H01L23/528 ,  G11C16/04 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L23/5283 ,  G11C16/0483 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: A microelectronic device comprises a stack structure comprising alternating conductive structures and insulative structures arranged in tiers. Each of the tiers individually comprise a conductive structure and an insulative structure. The microelectronic device comprises a staircase structure having steps comprising lateral ends of the tiers, and contacts overlying the steps at different elevations of the staircase structure. The contacts comprise a liner material. The microelectronic device comprises conductive plug structures underlying the liner material of the contacts and comprising lateral portions within voids in at least some of the conductive structures, and vertical portions overlying the lateral portions. Related electronic systems and methods are also described.

公开(公告)号：US20230063178A1

公开(公告)日：2023-03-02

申请号：US17564633

申请日：2021-12-29

Applicant: Micron Technology, Inc.

Inventor： Bo Zhao ,  Matthew J. King ,  Jason Reece ,  Michael J. Gossman ,  Shruthi Kumara Vadivel ,  Martin J. Barclay ,  Lifang Xu ,  Joel D. Peterson ,  Matthew Park ,  Adam L. Olson ,  David A. Kewley ,  Xiaosong Zhang ,  Justin B. Dorhout ,  Zhen Feng Yow ,  Kah Sing Chooi ,  Tien Minh Quan Tran ,  Biow Hiem Ong

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/768

Abstract: A microelectronic device includes a stack structure including a vertically alternating sequence of conductive structures and insulating structures arranged in tiers, a dielectric-filled opening vertically extending into the stack structure and defined between two internal sidewalls of the stack structure, a stadium structure within the stack structure and comprising steps defined by horizontal ends of at least some of the tiers, a first ledge extending upward from a first uppermost step of the steps of the stadium structure and interfacing with a first internal sidewall of the two internal sidewalls of the stack structure, and a second ledge extending upward from a second, opposite uppermost step of the steps of the stadium structure and interfacing with a second, opposite internal sidewall of the two internal sidewalls.

公开(公告)号：US11158577B2

公开(公告)日：2021-10-26

申请号：US16778346

申请日：2020-01-31

Applicant: Micron Technology, Inc.

Inventor： Biow Hiem Ong ,  David A. Daycock ,  Chieh Hsien Quek ,  Chii Wean Calvin Chen ,  Christian George Emor ,  Wing Yu Lo

IPC: H01L23/535 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L27/11526 ,  H01L27/11582 ,  H01L27/11556

Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

公开(公告)号：US11990367B2

公开(公告)日：2024-05-21

申请号：US17444948

申请日：2021-08-12

Applicant: Micron Technology, Inc.

Inventor： Xiaosong Zhang ,  Yongjun J. Hu ,  David A. Kewley ,  Md Zahid Hossain ,  Michael J. Irwin ,  Daniel Billingsley ,  Suresh Ramarajan ,  Robert J. Hanson ,  Biow Hiem Ong ,  Keen Wah Chow

IPC: H01L21/768

CPC classification number: H01L21/76831 ,  H01L21/76843 ,  H01L21/76879 ,  H01L21/76804

Abstract: An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.

公开(公告)号：US11967556B2

公开(公告)日：2024-04-23

申请号：US17452113

申请日：2021-10-25

Applicant: Micron Technology, Inc.

Inventor： Biow Hiem Ong ,  David A. Daycock ,  Chieh Hsien Quek ,  Chii Wean Calvin Chen ,  Christian George Emor ,  Wing Yu Lo

IPC: H01L23/535 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H10B41/27 ,  H10B41/40 ,  H10B43/27

CPC classification number: H01L23/535 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53266 ,  H10B41/40 ,  H10B41/27 ,  H10B43/27

Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

公开(公告)号：US20210375670A1

公开(公告)日：2021-12-02

申请号：US17444948

申请日：2021-08-12

Applicant: Micron Technology, Inc.

Inventor： Xiaosong Zhang ,  Yongjun J. Hu ,  David A. Kewley ,  Md Zahid Hossain ,  Michael J. Irwin ,  Daniel Billingsley ,  Suresh Ramarajan ,  Robert J. Hanson ,  Biow Hiem Ong ,  Keen Wah Chow

IPC: H01L21/768

Abstract: An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.