公开(公告)号：US20190304516A1

公开(公告)日：2019-10-03

申请号：US15938965

申请日：2018-03-28

Applicant: Micron Technology, Inc.

Inventor： Hideo Shimizu ,  Makoto Kitayama ,  Mototsugu Fujimitsu

IPC: G11C7/10 ,  G06F11/10 ,  G11C29/52 ,  G11C7/06 ,  G11C8/10 ,  G11C29/42 ,  G11C5/06

Abstract: Apparatuses and methods for coupling data lines in a memory device are disclosed. An example apparatus includes first and second local IO lines, first and second global IO lines, and a control circuit. The control circuit is configured in a write operation to bring the first local IO line and the first global IO line to one of first and second combinations in logic level and the second local IO line and the second global IO line to the other of the first and second combinations in logic level, and further configured in a read operation to cause the first local IO line and the first global IO line into to one of third and fourth combinations in logic level and the second local IO line and the second global IO line to the other of the third and fourth combinations in logic level.