公开(公告)号：US09786643B2

公开(公告)日：2017-10-10

申请号：US14325619

申请日：2014-07-08

Applicant: Micron Technology, Inc.

Inventor： Zhaohui Ma ,  Wei Zhou ,  Chee Chung So ,  Soo Loo Ang ,  Aibin Yu

IPC: H01L25/065 ,  H01L25/18 ,  H01L25/00 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/544 ,  H01L21/683 ,  H01L21/78

CPC classification number: H01L25/18 ,  H01L21/561 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/544 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/18161 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014

Abstract: Methods of protecting semiconductor devices may involve forming trenches in streets between stacks of semiconductor dice on regions of a semiconductor wafer. A protective material may be positioned between the die stacks and in the trenches, after which the wafer is thinned from a side opposite the die stacks to expose the protective material in the trenches. Semiconductor devices comprising stacks of dice and corresponding base semiconductor dice comprising wafer regions are separated from one another by cutting through the protective material along the streets and in the trenches. The protective material covers at least sides of each die stack as well as side surfaces of the corresponding base semiconductor die.

公开(公告)号：US10312226B2

公开(公告)日：2019-06-04

申请号：US15728043

申请日：2017-10-09

Applicant: Micron Technology, Inc.

Inventor： Zhaohui Ma ,  Wei Zhou ,  Chee Chung So ,  Soo Loo Ang ,  Aibin Yu

IPC: H01L25/18 ,  H01L25/065 ,  H01L25/00 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/544 ,  H01L21/683 ,  H01L21/78

Abstract: Methods of protecting semiconductor devices may involve cutting partially through a thickness of a semiconductor wafer to form trenches between stacks of semiconductor dice on regions of integrated circuitry of the semiconductor wafer. A protective material may be dispensed into the trenches and to a level at least substantially the same as a height of the stacks of semiconductor dice. Material of the semiconductor wafer may be removed from a back side thereof at least to a depth sufficient to expose the protective material in the trenches. A remaining thickness of the protective material between the stacks of semiconductor dice may be cut through.

公开(公告)号：US20180033780A1

公开(公告)日：2018-02-01

申请号：US15728043

申请日：2017-10-09

Applicant: Micron Technology, Inc.

Inventor： Zhaohui Ma ,  Wei Zhou ,  Chee Chung So ,  Soo Loo Ang ,  Aibin Yu

IPC: H01L25/18 ,  H01L21/683 ,  H01L21/78 ,  H01L23/544 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L25/18 ,  H01L21/561 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/544 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/18161 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014

Abstract: Methods of protecting semiconductor devices may involve cutting partially through a thickness of a semiconductor wafer to form trenches between stacks of semiconductor dice on regions of integrated circuitry of the semiconductor wafer. A protective material may be dispensed into the trenches and to a level at least substantially the same as a height of the stacks of semiconductor dice. Material of the semiconductor wafer may be removed from a back side thereof at least to a depth sufficient to expose the protective material in the trenches. A remaining thickness of the protective material between the stacks of semiconductor dice may be cut through.

公开(公告)号：US20160013154A1

公开(公告)日：2016-01-14

申请号：US14325619

申请日：2014-07-08

Applicant: Micron Technology, Inc.

Inventor： Zhaohui Ma ,  Wei Zhou ,  Chee Chung So ,  Soo Loo Ang ,  Aibin Yu

IPC: H01L25/065 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L21/304 ,  H01L21/683 ,  H01L25/00 ,  H01L21/78

CPC classification number: H01L25/18 ,  H01L21/561 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/544 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/18161 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014

Abstract: Methods of protecting semiconductor devices may involve forming trenches in streets between stacks of semiconductor dice on regions of a semiconductor wafer. A protective material may be positioned between the die stacks and in the trenches, after which the wafer is thinned from a side opposite the die stacks to expose the protective material in the trenches. Semiconductor devices comprising stacks of dice and corresponding base semiconductor dice comprising wafer regions are separated from one another by cutting through the protective material along the streets and in the trenches. The protective material covers at least sides of each die stack as well as side surfaces of the corresponding base semiconductor die.

Abstract translation: 保护半导体器件的方法可以包括在半导体晶片的区域上的半导体晶片的堆叠之间的街道中形成沟槽。 保护材料可以位于管芯堆叠之间和沟槽中，此后晶片从与管芯堆叠相反的一侧变薄以露出沟槽中的保护材料。 包括晶片叠的半导体器件和包括晶片区域的相应的基底半导体晶片通过沿街道和沟槽中切割保护材料而彼此分离。 保护材料覆盖每个管芯堆叠的至少一侧以及相应的基底半导体管芯的侧表面。

公开(公告)号：US10734370B2

公开(公告)日：2020-08-04

申请号：US16396235

申请日：2019-04-26

Applicant: Micron Technology, Inc.

Inventor： Zhaohui Ma ,  Wei Zhou ,  Chee Chung So ,  Soo Loo Ang ,  Aibin Yu

IPC: H01L21/56 ,  H01L25/18 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L23/31 ,  H01L23/544 ,  H01L21/683 ,  H01L21/78

Abstract: Methods of making semiconductor device packages may involve cutting kerfs in streets between regions of a semiconductor wafer and positioning stacks of semiconductor dice on portions of surfaces of at least some adjacent regions. A protective material may be dispensed only between the stacks of the semiconductor dice, over the exposed remainders of the regions, and in the kerfs. A back side of the semiconductor wafer may be ground to a final thickness, revealing the protective material in the kerfs at a side of the semiconductor wafer opposite the stacks of the semiconductor dice. The protective material between the stacks of the semiconductor dice and within the kerfs may be cut through, leaving the protective material on sides of the semiconductor dice of the stacks and on side surfaces of the regions within the kerfs.

公开(公告)号：US20190252362A1

公开(公告)日：2019-08-15

申请号：US16396235

申请日：2019-04-26

Applicant: Micron Technology, Inc.

Inventor： Zhaohui Ma ,  Wei Zhou ,  Chee Chung So ,  Soo Loo Ang ,  Aibin Yu

IPC: H01L25/18 ,  H01L23/00 ,  H01L25/065 ,  H01L23/31 ,  H01L25/00 ,  H01L21/56 ,  H01L21/78 ,  H01L23/544 ,  H01L21/683

CPC classification number: H01L25/18 ,  H01L21/561 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/544 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/18161 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014

Abstract: Methods of making semiconductor device packages may involve cutting kerfs in streets between regions of a semiconductor wafer and positioning stacks of semiconductor dice on portions of surfaces of at least some adjacent regions. A protective material may be dispensed only between the stacks of the semiconductor dice, over the exposed remainders of the regions, and in the kerfs. A back side of the semiconductor wafer may be ground to a final thickness, revealing the protective material in the kerfs at a side of the semiconductor wafer opposite the stacks of the semiconductor dice. The protective material between the stacks of the semiconductor dice and within the kerfs may be cut through, leaving the protective material on sides of the semiconductor dice of the stacks and on side surfaces of the regions within the kerfs.