公开(公告)号：US10424553B2

公开(公告)日：2019-09-24

申请号：US15339693

申请日：2016-10-31

Applicant: Micron Technology, Inc.

Inventor： Suresh Yeruva ,  Kyle K. Kirby ,  Owen R. Fay ,  Sameer S. Vadhavkar

IPC: H01L23/00 ,  H01L23/24 ,  H01L21/56 ,  H01L23/31

Abstract: Semiconductor devices with underfill control features, and associated systems and methods. A representative system includes a substrate having a substrate surface and a cavity in the substrate surface, and a semiconductor device having a device surface facing toward the substrate surface. The semiconductor device further includes at least one circuit element electrically coupled to a conductive structure. The conductive structure is electrically connected to the substrate, and the semiconductor device further has a non-conductive material positioned adjacent the conductive structure and aligned with the cavity of the substrate. An underfill material is positioned between the substrate and the semiconductor device. In other embodiments, in addition to or in lieu of the con-conductive material, a first conductive structure is connected within the cavity, and a second conductive structure connected outside the cavity. The first conductive structure extends away from the device surface a greater distance than does the second conductive structure.

公开(公告)号：US20190371755A1

公开(公告)日：2019-12-05

申请号：US16541449

申请日：2019-08-15

Applicant: Micron Technology, Inc.

Inventor： Suresh Yeruva ,  Kyle K. Kirby ,  Owen R. Fay ,  Sameer S. Vadhavkar

IPC: H01L23/00 ,  H01L23/24 ,  H01L21/56

Abstract: Semiconductor devices with underfill control features, and associated systems and methods. A representative system includes a substrate having a substrate surface and a cavity in the substrate surface, and a semiconductor device having a device surface facing toward the substrate surface. The semiconductor device further includes at least one circuit element electrically coupled to a conductive structure. The conductive structure is electrically connected to the substrate, and the semiconductor device further has a non-conductive material positioned adjacent the conductive structure and aligned with the cavity of the substrate. An underfill material is positioned between the substrate and the semiconductor device. In other embodiments, in addition to or in lieu of the con-conductive material, a first conductive structure is connected within the cavity, and a second conductive structure connected outside the cavity. The first conductive structure extends away from the device surface a greater distance than does the second conductive structure.

公开(公告)号：US20210343670A1

公开(公告)日：2021-11-04

申请号：US17376934

申请日：2021-07-15

Applicant: Micron Technology, Inc.

Inventor： Suresh Yeruva ,  Owen R. Fay ,  Sameer S. Vadhavkar ,  Adriel Jebin Jacob Jebaraj ,  Wayne H. Huang

IPC: H01L23/00

Abstract: A method of manufacturing a semiconductor device having a conductive substrate having a first surface, a second surface opposite the first surface, and a passivation material covering a portion of the first surface can include applying a seed layer of conductive material to the first surface of the conductive substrate and to the passivation material, the seed layer having a first face opposite the conductive substrate. The method can include forming a plurality of pillars comprising layers of first and second materials. The method can include etching the seed layer to undercut the seed layer between the conductive substrate and the first material of at least one of the pillars. In some embodiments, a cross-sectional area of the seed layer in contact with the passivation material between the first material and the conductive substrate is less than the cross-sectional area of the second material.

公开(公告)号：US11735549B2

公开(公告)日：2023-08-22

申请号：US17376934

申请日：2021-07-15

Applicant: Micron Technology, Inc.

Inventor： Suresh Yeruva ,  Owen R. Fay ,  Sameer S. Vadhavkar ,  Adriel Jebin Jacob Jebaraj ,  Wayne H. Huang

IPC: H01L23/00

CPC classification number: H01L24/14 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/1146 ,  H01L2224/11614 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14517 ,  H01L2924/35121

Abstract: A method of manufacturing a semiconductor device having a conductive substrate having a first surface, a second surface opposite the first surface, and a passivation material covering a portion of the first surface can include applying a seed layer of conductive material to the first surface of the conductive substrate and to the passivation material, the seed layer having a first face opposite the conductive substrate. The method can include forming a plurality of pillars comprising layers of first and second materials. The method can include etching the seed layer to undercut the seed layer between the conductive substrate and the first material of at least one of the pillars. In some embodiments, a cross-sectional area of the seed layer in contact with the passivation material between the first material and the conductive substrate is less than the cross-sectional area of the second material.

公开(公告)号：US10784224B2

公开(公告)日：2020-09-22

申请号：US16541449

申请日：2019-08-15

Applicant: Micron Technology, Inc.

Inventor： Suresh Yeruva ,  Kyle K. Kirby ,  Owen R. Fay ,  Sameer S. Vadhavkar

IPC: H01L23/00 ,  H01L23/24 ,  H01L21/56 ,  H01L23/31

Abstract: Semiconductor devices with underfill control features, and associated systems and methods. A representative system includes a substrate having a substrate surface and a cavity in the substrate surface, and a semiconductor device having a device surface facing toward the substrate surface. The semiconductor device further includes at least one circuit element electrically coupled to a conductive structure. The conductive structure is electrically connected to the substrate, and the semiconductor device further has a non-conductive material positioned adjacent the conductive structure and aligned with the cavity of the substrate. An underfill material is positioned between the substrate and the semiconductor device. In other embodiments, in addition to or in lieu of the con-conductive material, a first conductive structure is connected within the cavity, and a second conductive structure connected outside the cavity. The first conductive structure extends away from the device surface a greater distance than does the second conductive structure.

公开(公告)号：US11081460B2

公开(公告)日：2021-08-03

申请号：US16236237

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Suresh Yeruva ,  Owen R. Fay ,  Sameer S. Vadhavkar ,  Adriel Jebin Jacob Jebaraj ,  Wayne H. Huang

IPC: H01L23/00

Abstract: A method of manufacturing a semiconductor device having a conductive substrate having a first surface, a second surface opposite the first surface, and a passivation material covering a portion of the first surface can include applying a seed layer of conductive material to the first surface of the conductive substrate and to the passivation material, the seed layer having a first face opposite the conductive substrate. The method can include forming a plurality of pillars comprising layers of first and second materials. The method can include etching the seed layer to undercut the seed layer between the conductive substrate and the first material of at least one of the pillars. In some embodiments, a cross-sectional area of the seed layer in contact with the passivation material between the first material and the conductive substrate is less than the cross-sectional area of the second material.

公开(公告)号：US20200211993A1

公开(公告)日：2020-07-02

申请号：US16236237

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Suresh Yeruva ,  Owen R. Fay ,  Sameer S. Vadhavkar ,  Adriel Jebin Jacob Jebaraj ,  Wayne H. Huang

IPC: H01L23/00

Abstract: A method of manufacturing a semiconductor device having a conductive substrate having a first surface, a second surface opposite the first surface, and a passivation material covering a portion of the first surface can include applying a seed layer of conductive material to the first surface of the conductive substrate and to the passivation material, the seed layer having a first face opposite the conductive substrate. The method can include forming a plurality of pillars comprising layers of first and second materials. The method can include etching the seed layer to undercut the seed layer between the conductive substrate and the first material of at least one of the pillars. In some embodiments, a cross-sectional area of the seed layer in contact with the passivation material between the first material and the conductive substrate is less than the cross-sectional area of the second material.

公开(公告)号：US20180122762A1

公开(公告)日：2018-05-03

申请号：US15339693

申请日：2016-10-31

Applicant: Micron Technology, Inc.

Inventor： Suresh Yeruva ,  Kyle K. Kirby ,  Owen R. Fay ,  Sameer S. Vadhavkar

IPC: H01L23/00 ,  H01L23/24 ,  H01L21/56

Abstract: Semiconductor devices with underfill control features, and associated systems and methods. A representative system includes a substrate having a substrate surface and a cavity in the substrate surface, and a semiconductor device having a device surface facing toward the substrate surface. The semiconductor device further includes at least one circuit element electrically coupled to a conductive structure. The conductive structure is electrically connected to the substrate, and the semiconductor device further has a non-conductive material positioned adjacent the conductive structure and aligned with the cavity of the substrate. An underfill material is positioned between the substrate and the semiconductor device. In other embodiments, in addition to or in lieu of the con-conductive material, a first conductive structure is connected within the cavity, and a second conductive structure connected outside the cavity. The first conductive structure extends away from the device surface a greater distance than does the second conductive structure.