公开(公告)号：US20230154989A1

公开(公告)日：2023-05-18

申请号：US18099972

申请日：2023-01-23

Applicant: Micron Technology, Inc.

Inventor： Ahmed Nayaz Noemaun ,  Stephen W. Russell ,  Tao D. Nguyen ,  Santanu Sarkar

IPC: H01L29/40 ,  H01L29/66 ,  H01L21/82

CPC classification number: H01L29/408 ,  H01L29/6656 ,  H01L21/82

Abstract: Some embodiments include an integrated assembly having a pair of substantially parallel features spaced from one another by an intervening space. A conductive pipe is between the features and substantially parallel to the features. The conductive pipe may be formed within a tube. The tube may be generated by depositing insulative material between the features in a manner which pinches off a top region of the insulative material to leave the tube as a void region under the pinched-off top region.

公开(公告)号：US11127899B2

公开(公告)日：2021-09-21

申请号：US16382026

申请日：2019-04-11

Applicant: Micron Technology, inc.

Inventor： Jordan D. Greenlee ,  Tao D. Nguyen ,  John Mark Meldrim ,  Aaron K. Belsher

IPC: G11C5/06 ,  H01L45/00 ,  H01L27/24 ,  G11C13/00

Abstract: Some embodiments include an integrated assembly having an insulative mass over a conductive base structure. A conductive interconnect extends through the insulative mass to an upper surface of the conductive base structure. The conductive interconnect includes a conductive liner extending around an outer lateral periphery of the interconnect. The conductive liner includes nitrogen in combination with a first metal. A container-shaped conductive structure is laterally surrounded by the conductive liner. The container-shaped conductive structure includes a second metal. A conductive plug is within the container-shaped conductive structure. Some embodiments include methods of forming conductive interconnects within integrated assemblies.

公开(公告)号：US20240250132A1

公开(公告)日：2024-07-25

申请号：US18594397

申请日：2024-03-04

Applicant: Micron Technology, Inc.

Inventor： Ahmed Nayaz Noemaun ,  Stephen W. Russell ,  Tao D. Nguyen ,  Santanu Sarkar

IPC: H01L29/40 ,  H01L21/82 ,  H01L29/66

CPC classification number: H01L29/408 ,  H01L21/82 ,  H01L29/6656

Abstract: Some embodiments include an integrated assembly having a pair of substantially parallel features spaced from one another by an intervening space. A conductive pipe is between the features and substantially parallel to the features. The conductive pipe may be formed within a tube. The tube may be generated by depositing insulative material between the features in a manner which pinches off a top region of the insulative material to leave the tube as a void region under the pinched-off top region.

公开(公告)号：US11948984B2

公开(公告)日：2024-04-02

申请号：US18099972

申请日：2023-01-23

Applicant: Micron Technology, Inc.

Inventor： Ahmed Nayaz Noemaun ,  Stephen W. Russell ,  Tao D. Nguyen ,  Santanu Sarkar

IPC: H01L29/40 ,  H01L21/82 ,  H01L29/66

CPC classification number: H01L29/408 ,  H01L21/82 ,  H01L29/6656

Abstract: Some embodiments include an integrated assembly having a pair of substantially parallel features spaced from one another by an intervening space. A conductive pipe is between the features and substantially parallel to the features. The conductive pipe may be formed within a tube. The tube may be generated by depositing insulative material between the features in a manner which pinches off a top region of the insulative material to leave the tube as a void region under the pinched-off top region.

公开(公告)号：US11818968B2

公开(公告)日：2023-11-14

申请号：US17410591

申请日：2021-08-24

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  Tao D. Nguyen ,  John Mark Meldrim ,  Aaron K. Belsher

IPC: G11C5/06 ,  H10N70/00 ,  G11C13/00 ,  H10B63/00 ,  H10N70/20

CPC classification number: H10N70/823 ,  G11C13/004 ,  G11C13/0028 ,  H10B63/80 ,  H10N70/061 ,  H10N70/882 ,  H10N70/231

Abstract: Some embodiments include an integrated assembly having an insulative mass over a conductive base structure. A conductive interconnect extends through the insulative mass to an upper surface of the conductive base structure. The conductive interconnect includes a conductive liner extending around an outer lateral periphery of the interconnect. The conductive liner includes nitrogen in combination with a first metal. A container-shaped conductive structure is laterally surrounded by the conductive liner. The container-shaped conductive structure includes a second metal. A conductive plug is within the container-shaped conductive structure. Some embodiments include methods of forming conductive interconnects within integrated assemblies.

公开(公告)号：US11600707B2

公开(公告)日：2023-03-07

申请号：US15930090

申请日：2020-05-12

Applicant: Micron Technology, Inc.

Inventor： Ahmed Nayaz Noemaun ,  Stephen W. Russell ,  Tao D. Nguyen ,  Santanu Sarkar

IPC: H01L29/40 ,  H01L29/66 ,  H01L21/82

Abstract: Some embodiments include an integrated assembly having a pair of substantially parallel features spaced from one another by an intervening space. A conductive pipe is between the features and substantially parallel to the features. The conductive pipe may be formed within a tube. The tube may be generated by depositing insulative material between the features in a manner which pinches off a top region of the insulative material to leave the tube as a void region under the pinched-off top region.

公开(公告)号：US20210384422A1

公开(公告)日：2021-12-09

申请号：US17410591

申请日：2021-08-24

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  Tao D. Nguyen ,  John Mark Meldrim ,  Aaron K. Belsher

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

Abstract: Some embodiments include an integrated assembly having an insulative mass over a conductive base structure. A conductive interconnect extends through the insulative mass to an upper surface of the conductive base structure. The conductive interconnect includes a conductive liner extending around an outer lateral periphery of the interconnect. The conductive liner includes nitrogen in combination with a first metal. A container-shaped conductive structure is laterally surrounded by the conductive liner. The container-shaped conductive structure includes a second metal. A conductive plug is within the container-shaped conductive structure. Some embodiments include methods of forming conductive interconnects within integrated assemblies.

公开(公告)号：US20210359089A1

公开(公告)日：2021-11-18

申请号：US15930090

申请日：2020-05-12

Applicant: Micron Technology, Inc.

Inventor： Ahmed Nayaz Noemaun ,  Stephen W. Russell ,  Tao D. Nguyen ,  Santanu Sarkar

IPC: H01L29/40 ,  H01L21/82 ,  H01L29/66

Abstract: Some embodiments include an integrated assembly having a pair of substantially parallel features spaced from one another by an intervening space. A conductive pipe is between the features and substantially parallel to the features. The conductive pipe may be formed within a tube. The tube may be generated by depositing insulative material between the features in a manner which pinches off a top region of the insulative material to leave the tube as a void region under the pinched-off top region.

公开(公告)号：US20200328348A1

公开(公告)日：2020-10-15

申请号：US16382026

申请日：2019-04-11

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  Tao D. Nguyen ,  John Mark Meldrim ,  Aaron K. Belsher

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

Abstract: Some embodiments include an integrated assembly having an insulative mass over a conductive base structure. A conductive interconnect extends through the insulative mass to an upper surface of the conductive base structure. The conductive interconnect includes a conductive liner extending around an outer lateral periphery of the interconnect. The conductive liner includes nitrogen in combination with a first metal. A container-shaped conductive structure is laterally surrounded by the conductive liner. The container-shaped conductive structure includes a second metal. A conductive plug is within the container-shaped conductive structure. Some embodiments include methods of forming conductive interconnects within integrated assemblies.