公开(公告)号：US20250006292A1

公开(公告)日：2025-01-02

申请号：US18440619

申请日：2024-02-13

Applicant: Micron Technology, Inc.

Inventor： Taylor Alu ,  Nicola Ciocchini ,  Shyam Sunder Raghunathan ,  Guang Hu ,  Walter Di Francesco ,  Umberto Siciliani ,  Violante Moschiano ,  Karan Banerjee

IPC: G11C29/52 ,  G11C16/20 ,  G11C16/34

Abstract: A method includes detecting a change in a memory control signal of a memory device including memory blocks, determining based at least on the change in the memory control signal that the memory device is in a stable state, and responsive to determining that the memory device is in the stable state, associating a voltage offset bin with at least one memory block of the memory device.