公开(公告)号：US11616079B2

公开(公告)日：2023-03-28

申请号：US17525817

申请日：2021-11-12

Applicant: Micron Technology, Inc.

Inventor： Albert Fayrushin ,  Augusto Benvenuti ,  Haitao Liu ,  Xin Lan

IPC: H01L27/11582 ,  H01L29/10 ,  H01L27/11573 ,  H01L29/51 ,  H01L27/11565

Abstract: Some embodiments include a pillar which contains semiconductor material, and which extends primarily along a first direction. A cross-section through the pillar along a second direction orthogonal to the first direction is through the semiconductor material and includes a lateral periphery of the pillar configured as three-sided shape. Some embodiments include an integrated assembly having a vertical stack of alternating first and second levels. The first levels include conductive structures and the second levels are insulative. Channel-material-pillars extend through the vertical stack. Each of the channel-material-pillars has a top-down cross-section which includes a lateral periphery configured as three-sided shape of an equilateral triangle with rounded vertices.

公开(公告)号：US20220068969A1

公开(公告)日：2022-03-03

申请号：US17525817

申请日：2021-11-12

Applicant: Micron Technology, Inc.

Inventor： Albert Fayrushin ,  Augusto Benvenuti ,  Haitao Liu ,  Xin Lan

IPC: H01L27/11582 ,  H01L29/10 ,  H01L27/11573 ,  H01L29/51 ,  H01L27/11565

Abstract: Some embodiments include a pillar which contains semiconductor material, and which extends primarily along a rust direction. A cross-section through the pillar along a second direction orthogonal to the first direction is through the semiconductor material and includes a lateral periphery of the pillar configured as three-sided shape. Some embodiments include an integrated assembly having a vertical stack of alternating first and second levels. The first levels include conductive structures and the second levels ae insulative. Channel-material-pillars extend through the vertical stack. Each of the channel-material-pillars has a top-down cross-section which includes a lateral periphery configured as three-sided shape of an equilateral triangle with rounded vertices.

公开(公告)号：US20230389311A1

公开(公告)日：2023-11-30

申请号：US17804752

申请日：2022-05-31

Applicant: Micron Technology, Inc.

Inventor： Yifen Liu ,  Xin Lan ,  Byeung Chul Kim ,  Ye Xiang Hong ,  Yun Huang ,  Sok Han Wong

IPC: H01L27/11578 ,  H01L27/11565 ,  H01L29/06

CPC classification number: H01L27/11578 ,  H01L27/11565 ,  H01L29/0649

Abstract: An electronic device includes a stack structure including vertically alternating dielectric materials and conductive materials, the conductive materials including first regions and second regions, and pillars extending vertically through the stack structure, the pillars adjacent to the second regions of the conductive materials. The pillars include cell films adjacent to the second regions, the cell films including a high-k dielectric material, a barrier oxide material, a storage node material, a tunneling material, and a channel material. Segments of each of the high-k dielectric material, the barrier oxide material, and the storage node material are adjacent to the second regions. A length of the segments of high-k dielectric material and a length of the segments of storage node material adjacent to the second regions are greater than a height of the first regions of the conductive materials. Related methods and systems are also disclosed.

公开(公告)号：US11201167B2

公开(公告)日：2021-12-14

申请号：US16704938

申请日：2019-12-05

Applicant: Micron Technology, Inc.

Inventor： Albert Fayrushin ,  Augusto Benvenuti ,  Haitao Liu ,  Xin Lan

IPC: H01L27/11582 ,  H01L29/10 ,  H01L27/11573 ,  H01L29/51 ,  H01L27/11565

Abstract: Some embodiments include a pillar which contains semiconductor material, and which extends primarily along a first direction. A cross-section through the pillar along a second direction orthogonal to the first direction is through the semiconductor material and includes a lateral periphery of the pillar configured as three-sided shape. Some embodiments include an integrated assembly having a vertical stack of alternating first and second levels. The first levels include conductive structures and the second levels are insulative. Channel-material-pillars extend through the vertical stack. Each of the channel-material-pillars has a top-down cross-section which includes a lateral periphery configured as three-sided shape of an equilateral triangle with rounded vertices.

公开(公告)号：US20210175246A1

公开(公告)日：2021-06-10

申请号：US16704938

申请日：2019-12-05

Applicant: Micron Technology, Inc.

Inventor： Albert Fayrushin ,  Augusto Benvenuti ,  Haitao Liu ,  Xin Lan

IPC: H01L27/11582 ,  H01L29/10 ,  H01L27/11565 ,  H01L29/51 ,  H01L27/11573

Abstract: Some embodiments include a pillar which contains semiconductor material, and which extends primarily along a first direction. A cross-section through the pillar along a second direction orthogonal to the first direction is through the semiconductor material and includes a lateral periphery of the pillar configured as three-sided shape. Some embodiments include an integrated assembly having a vertical stack of alternating first and second levels. The first levels include conductive structures and the second levels are insulative. Channel-material-pillars extend through the vertical stack. Each of the channel-material-pillars has a top-down cross-section which includes a lateral periphery configured as three-sided shape of an equilateral triangle with rounded vertices.