公开(公告)号：US20240244845A1

公开(公告)日：2024-07-18

申请号：US18622671

申请日：2024-03-29

申请人： Micron Technology, Inc.

发明人： Yifen Liu ,  Yan Song ,  Albert Fayrushin ,  Naiming Liu ,  Yingda Dong ,  George Matamis

IPC分类号： H10B43/27 ,  H01L23/522 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

CPC分类号： H10B43/27 ,  H01L23/5226 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

摘要： An electronic device comprises a stack of alternating dielectric materials and conductive materials, a pillar region extending vertically through the stack, an oxide material within the pillar region and laterally adjacent to the dielectric materials and the conductive materials of the stack, and a storage node laterally adjacent to the oxide material and within the pillar region. A charge confinement region of the storage node is in horizontal alignment with the conductive materials of the stack. A height of the charge confinement region in a vertical direction is less than a height of a respective, laterally adjacent conductive material of the stack in the vertical direction. Related methods and systems are also disclosed.

公开(公告)号：US20220149068A1

公开(公告)日：2022-05-12

申请号：US17092916

申请日：2020-11-09

申请人： Micron Technology, Inc.

发明人： Yifen Liu ,  Yan Song ,  Albert Fayrushin ,  Naiming Liu ,  Yingda Dong ,  George Matamis

IPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L23/522

摘要： An electronic device comprises a stack of alternating dielectric materials and conductive materials, a pillar region extending vertically through the stack, an oxide material within the pillar region and laterally adjacent to the dielectric materials and the conductive materials of the stack, and a storage node laterally adjacent to the oxide material and within the pillar region. A charge confinement region of the storage node is in horizontal alignment with the conductive materials of the stack. A height of the charge confinement region in a vertical direction is less than a height of a respective, laterally adjacent conductive material of the stack in the vertical direction. Related methods and systems are also disclosed.

公开(公告)号：US11956954B2

公开(公告)日：2024-04-09

申请号：US17092916

申请日：2020-11-09

申请人： Micron Technology, Inc.

发明人： Yifen Liu ,  Yan Song ,  Albert Fayrushin ,  Naiming Liu ,  Yingda Dong ,  George Matamis

IPC分类号： H10B43/27 ,  H01L23/522 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

CPC分类号： H10B43/27 ,  H01L23/5226 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

摘要： An electronic device comprises a stack of alternating dielectric materials and conductive materials, a pillar region extending vertically through the stack, an oxide material within the pillar region and laterally adjacent to the dielectric materials and the conductive materials of the stack, and a storage node laterally adjacent to the oxide material and within the pillar region. A charge confinement region of the storage node is in horizontal alignment with the conductive materials of the stack. A height of the charge confinement region in a vertical direction is less than a height of a respective, laterally adjacent conductive material of the stack in the vertical direction. Related methods and systems are also disclosed.