公开(公告)号：US20240321741A1

公开(公告)日：2024-09-26

申请号：US18427720

申请日：2024-01-30

Applicant: Micron Technology, Inc.

Inventor： Zhou Xuan ,  Sijia Yu ,  Biow Hiem Ong

IPC: H01L23/528 ,  G11C16/04 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L23/5283 ,  G11C16/0483 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: A microelectronic device comprises a stack structure comprising alternating conductive structures and insulative structures arranged in tiers. Each of the tiers individually comprise a conductive structure and an insulative structure. The microelectronic device comprises a staircase structure having steps comprising lateral ends of the tiers, and contacts overlying the steps at different elevations of the staircase structure. The contacts comprise a liner material. The microelectronic device comprises conductive plug structures underlying the liner material of the contacts and comprising lateral portions within voids in at least some of the conductive structures, and vertical portions overlying the lateral portions. Related electronic systems and methods are also described.