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    Two-phase substrate cleaning material
    2.
    发明授权
    Two-phase substrate cleaning material 失效
    两相基材清洗材料

    公开(公告)号：US08242067B2

    公开(公告)日：2012-08-14

    申请号：US12862072

    申请日：2010-08-24

    申请人： Mikhail Korolik ,  Erik M. Freer ,  John M. de Larios ,  Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker

    发明人： Mikhail Korolik ,  Erik M. Freer ,  John M. de Larios ,  Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker

    IPC分类号： C11D1/04

    CPC分类号： C11D11/0047 ,  B08B7/02 ,  C11D1/146 ,  C11D3/2079 ,  C11D9/02 ,  C11D17/0013 ,  C11D17/0017 ,  C23G1/18 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/31133 ,  H01L21/6708 ,  H01L21/67086

    摘要： A cleaning compound is disclosed for removing particulate contaminants from a semiconductor substrate surface. The cleaning compound includes a liquid and carboxylic acid solid components dispersed in a substantially uniform manner in the liquid. A concentration of the carboxylic acid solid components in the liquid exceeds a solubility limit of the carboxylic acid solid components in the liquid. In one embodiment, a concentration of the carboxylic acid solid components in the liquid is within a range extending from about 3 percent by weight to about 5 percent by weight. In one embodiment, the carboxylic acid solid components are defined by a carbon number of at least four. The carboxylic acid solid components are defined to interact with the particulate contaminants on the semiconductor substrate surface to remove the particulate contaminants from the semiconductor substrate surface. The cleaning compound is viscous and may be formed as a gel.

    摘要翻译： 公开了用于从半导体衬底表面去除微粒污染物的清洁化合物。 清洁化合物包括以基本均匀的方式分散在液体中的液体和羧酸固体组分。 液体中羧酸固体组分的浓度超过了液体中羧酸固体组分的溶解度极限。 在一个实施方案中，液体中羧酸固体组分的浓度在约3重量％至约5重量％的范围内。 在一个实施方案中，羧酸固体组分由至少四个的碳数定义。 羧酸固体组分被定义为与半导体衬底表面上的颗粒污染物相互作用以从半导体衬底表面去除颗粒污染物。 清洁化合物是粘稠的并且可以形成为凝胶。

    System and method for contained chemical surface treatment
    4.
    发明申请
    System and method for contained chemical surface treatment 失效
    含化学表面处理的系统和方法

    公开(公告)号：US20090114249A1

    公开(公告)日：2009-05-07

    申请号：US11704435

    申请日：2007-02-08

    申请人： Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker ,  John M. de Larios ,  Erik M. Freer ,  Mikhail Korolik

    发明人： Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker ,  John M. de Larios ,  Erik M. Freer ,  Mikhail Korolik

    IPC分类号： B08B3/04

    CPC分类号： H01L21/02057 ,  C25D5/34 ,  C25D7/12 ,  H01L21/288 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/76841

    摘要： An apparatus, system and method for preparing a surface of a substrate using a proximity head includes applying a non-Newtonian fluid between the surface of the substrate and a head surface of the proximity head. The non-Newtonian fluid defines a containment wall along one or more sides between the head surface and the surface of the substrate. The one or more sides provided with the non-Newtonian fluid define a treatment region on the substrate between the head surface and the surface of the substrate. A Newtonian fluid is applied to the surface of the substrate through the proximity head, such that the applied Newtonian fluid is substantially contained in the treatment region defined by the containment wall. The contained Newtonian fluid aids in the removal of one or more contaminants from the surface of the substrate. In one example, the non-Newtonian fluid can also be used to create ambient controlled isolated regions, which can assist in controlled processing of surfaces within the regions. In an alternate example, a second non-Newtonian fluid is applied to the treatment region instead of the Newtonian fluid. The second non-Newtonian fluid acts on one or more contaminants on the surface of the substrate substantially removing them from the surface of the substrate.

    摘要翻译： 使用接近头来制备基底的表面的装置，系统和方法包括在基底的表面和邻近头的头表面之间施加非牛顿流体。 非牛顿流体在头表面和基底表面之间沿着一个或多个侧面限定了容纳壁。 设置有非牛顿流体的一个或多个侧面限定了头表面和基底表面之间的基底上的处理区域。 通过邻近头将牛顿流体施加到基底的表面，使得所施加的牛顿流体基本上包含在由容纳壁限定的处理区域中。 所含的牛顿流体有助于从基底表面去除一种或多种污染物。 在一个示例中，非牛顿流体也可以用于创建环境控制的隔离区域，这可以有助于区域内的表面的受控处理。 在替代示例中，将第二非牛顿流体施加到处理区域而不是牛顿流体。 第二非牛顿流体作用于衬底表面上的一种或多种污染物，基本上将其从衬底的表面上除去。

    Apparatus for Contained Chemical Surface Treatment
    5.
    发明申请
    Apparatus for Contained Chemical Surface Treatment 审中-公开
    含化学表面处理装置

    公开(公告)号：US20110061687A1

    公开(公告)日：2011-03-17

    申请号：US12949762

    申请日：2010-11-18

    申请人： Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker ,  John M. de Larios ,  Erik M. Freer ,  Mikhail Korolik

    发明人： Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker ,  John M. de Larios ,  Erik M. Freer ,  Mikhail Korolik

    IPC分类号： B08B3/00

    CPC分类号： H01L21/02057 ,  C25D5/34 ,  C25D7/12 ,  H01L21/288 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/76841

    摘要： Apparatuses for preparing a surface of a substrate using a proximity head includes a carrier to hold and move the substrate along an axis and a proximity head having a head surface with a plurality of outlet ports defined thereon. The proximity head is defined to be positioned proximate and over the carrier and the surface of the substrate. A length of the head surface of the proximity head is defined to be greater than a diameter of the substrate and at least partially overlapping over the carrier when the substrate is present. The proximity head includes a first set of outlet ports in a first region defining a first applicator that is configured to apply a non-Newtonian fluid between a surface of the carrier and the head surface of the proximity head. A second set of outlet ports in a second region of the proximity head defines a second applicator that is configured to apply a first chemistry to the surface of the substrate when present. The second region is adjacent to the first region. A third set of outlet ports in a third region of the proximity head defines a third applicator that is configured to apply the non-Newtonian fluid between the head surface of the proximity head and the surface of the substrate when present. The third region is defined adjacent to the second region. A fourth set of outlet ports is defined in the second region of the proximity head to substantially remove the first chemistry from the surface of the substrate when present.

    摘要翻译： 用于使用接近头来制备基底表面的装置包括：载体，用于沿着轴保持和移动基底;以及接近头，具有头表面，其上限定有多个出口。 接近头被限定为位于载体和基底的表面附近和上方。 接近头部的头表面的长度被限定为大于衬底的直径，并且当衬底存在时至少部分地重叠在载体上。 邻近头部包括在第一区域中的第一组出口端口，所述第一区域限定第一施用器，其被构造成在载体的表面和邻近头部的头部表面之间施加非牛顿流体。 在邻近头部的第二区域中的第二组出口端口限定第二施加器，其被配置为当存在时将第一化学物质施加到衬底的表面。 第二区域与第一区域相邻。 接近头部的第三区域中的第三组出口限定了第三施加器，其被配置为当存在时将非牛顿流体施加在邻近头部的头部表面和基底表面之间。 第三区域被定义为与第二区域相邻。 第四组出口端口限定在邻近头部的第二区域中，以在存在时从衬底的表面基本上移除第一化学物质。

    Two-Phase Substrate Cleaning Material
    6.
    发明申请
    Two-Phase Substrate Cleaning Material 失效
    两相基材清洗材料

    公开(公告)号：US20100317556A1

    公开(公告)日：2010-12-16

    申请号：US12862072

    申请日：2010-08-24

    申请人： Mikhail Korolik ,  Erik M. Freer ,  John M. de Larios ,  Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker

    发明人： Mikhail Korolik ,  Erik M. Freer ,  John M. de Larios ,  Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker

    IPC分类号： C11D3/43

    CPC分类号： C11D11/0047 ,  B08B7/02 ,  C11D1/146 ,  C11D3/2079 ,  C11D9/02 ,  C11D17/0013 ,  C11D17/0017 ,  C23G1/18 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/31133 ,  H01L21/6708 ,  H01L21/67086

    摘要： A cleaning compound is disclosed for removing particulate contaminants from a semiconductor substrate surface. The cleaning compound includes a liquid and carboxylic acid solid components dispersed in a substantially uniform manner in the liquid. A concentration of the carboxylic acid solid components in the liquid exceeds a solubility limit of the carboxylic acid solid components in the liquid. In one embodiment, a concentration of the carboxylic acid solid components in the liquid is within a range extending from about 3 percent by weight to about 5 percent by weight. In one embodiment, the carboxylic acid solid components are defined by a carbon number of at least four. The carboxylic acid solid components are defined to interact with the particulate contaminants on the semiconductor substrate surface to remove the particulate contaminants from the semiconductor substrate surface. The cleaning compound is viscous and may be formed as a gel.

    摘要翻译： 公开了用于从半导体衬底表面去除微粒污染物的清洁化合物。 清洁化合物包括以基本均匀的方式分散在液体中的液体和羧酸固体组分。 液体中羧酸固体组分的浓度超过了液体中羧酸固体组分的溶解度极限。 在一个实施方案中，液体中羧酸固体组分的浓度在约3重量％至约5重量％的范围内。 在一个实施方案中，羧酸固体组分由至少四个的碳数定义。 羧酸固体组分被定义为与半导体衬底表面上的颗粒污染物相互作用以从半导体衬底表面去除颗粒污染物。 清洁化合物是粘稠的并且可以形成为凝胶。

    Methods for contained chemical surface treatment
    7.
    发明授权
    Methods for contained chemical surface treatment 失效
    含化学表面处理方法

    公开(公告)号：US07897213B2

    公开(公告)日：2011-03-01

    申请号：US11704435

    申请日：2007-02-08

    申请人： Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker ,  John M. de Larios ,  Erik M. Freer ,  Mikhail Korolik

    发明人： Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker ,  John M. de Larios ,  Erik M. Freer ,  Mikhail Korolik

    IPC分类号： B05D5/00

    CPC分类号： H01L21/02057 ,  C25D5/34 ,  C25D7/12 ,  H01L21/288 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/76841

    摘要： An apparatus, system and method for preparing a surface of a substrate using a proximity head includes applying a non-Newtonian fluid between the surface of the substrate and a head surface of the proximity head. The non-Newtonian fluid defines a containment wall along one or more sides between the head surface and the surface of the substrate. The one or more sides provided with the non-Newtonian fluid define a treatment region on the substrate between the head surface and the surface of the substrate. A Newtonian fluid is applied to the surface of the substrate through the proximity head, such that the applied Newtonian fluid is substantially contained in the treatment region defined by the containment wall. The contained Newtonian fluid aids in the removal of one or more contaminants from the surface of the substrate. In one example, the non-Newtonian fluid can also be used to create ambient controlled isolated regions, which can assist in controlled processing of surfaces within the regions. In an alternate example, a second non-Newtonian fluid is applied to the treatment region instead of the Newtonian fluid. The second non-Newtonian fluid acts on one or more contaminants on the surface of the substrate substantially removing them from the surface of the substrate.

    摘要翻译： 使用接近头来制备基底的表面的装置，系统和方法包括在基底的表面和邻近头的头表面之间施加非牛顿流体。 非牛顿流体在头表面和基底表面之间沿着一个或多个侧面限定了容纳壁。 设置有非牛顿流体的一个或多个侧面限定了头表面和基底表面之间的基底上的处理区域。 通过邻近头将牛顿流体施加到基底的表面，使得所施加的牛顿流体基本上包含在由容纳壁限定的处理区域中。 所含的牛顿流体有助于从基底表面去除一种或多种污染物。 在一个示例中，非牛顿流体也可以用于创建环境控制的隔离区域，这可以有助于区域内的表面的受控处理。 在替代示例中，将第二非牛顿流体施加到处理区域而不是牛顿流体。 第二非牛顿流体作用于衬底表面上的一种或多种污染物，基本上将其从衬底的表面上除去。

    Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
    9.
    发明授权
    Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids 失效
    使用压缩和/或加压泡沫，气泡和/或液体清洁半导体晶片的方法和设备

    公开(公告)号：US07568490B2

    公开(公告)日：2009-08-04

    申请号：US10746114

    申请日：2003-12-23

    申请人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fritz Redeker ,  Aleksander Owczarz

    发明人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fritz Redeker ,  Aleksander Owczarz

    IPC分类号： B08B3/00

    CPC分类号： B08B3/003 ,  H01L21/67028 ,  H01L21/67046 ,  Y10S134/902

    摘要： An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer, such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer, is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

    摘要翻译： 公开了一种装置和方法，其中具有含有污染物的表面的半导体衬底被清洁或以其它方式用泡沫进行化学处理。 半导体晶片被支撑在刚性支撑件（或泡沫层）上，并且在半导体晶片被支撑的同时在半导体晶片的相对表面上提供泡沫。 接触半导体晶片的泡沫使用形式加压以产生卡住的泡沫。 然后，在卡住的泡沫与半导体晶片接触的同时，形成半导体晶片之间的相对运动（例如平行于和/或垂直于半导体晶片的顶表面的振荡），以除去不需要的污染物和/或以其他方式 使用泡沫化学处理半导体晶片的表面。

    Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
    10.
    发明授权
    Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids 失效
    使用压缩和/或加压泡沫，气泡和/或液体清洁半导体晶片的方法和设备

    公开(公告)号：US08535451B2

    公开(公告)日：2013-09-17

    申请号：US12240300

    申请日：2008-09-29

    申请人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fritz Redeker ,  Aleksander Owczarz

    发明人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fritz Redeker ,  Aleksander Owczarz

    IPC分类号： B08B1/04

    CPC分类号： B08B3/003 ,  H01L21/67028 ,  H01L21/67046 ,  Y10S134/902

    摘要： An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer. such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer. is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

    摘要翻译： 公开了一种装置和方法，其中具有含有污染物的表面的半导体衬底被清洁或以其它方式用泡沫进行化学处理。 半导体晶片被支撑在刚性支撑件（或泡沫层）上，并且在半导体晶片被支撑的同时在半导体晶片的相对表面上提供泡沫。 接触半导体晶片的泡沫使用形式加压以产生卡住的泡沫。 形式与半导体晶圆之间的相对移动。 例如平行于和/或垂直于半导体晶片的顶表面的振荡。 然后在卡住的泡沫与半导体晶片接触的同时引发，以除去不期望的污染物和/或以其它方式化学处理使用泡沫的半导体晶片的表面。