公开(公告)号：US06897085B2

公开(公告)日：2005-05-24

申请号：US10348253

申请日：2003-01-21

申请人： Milfred Dale Hammerbacher ,  Gary Don Stevens ,  Paul Ray Sharrock ,  Aline Wullur ,  Frederic Rivollier

发明人： Milfred Dale Hammerbacher ,  Gary Don Stevens ,  Paul Ray Sharrock ,  Aline Wullur ,  Frederic Rivollier

IPC分类号： H01L31/0216 ,  H01L31/0352 ,  H01L31/042 ,  H01L21/00

CPC分类号： H01L31/035281 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/0547 ,  Y02E10/52

摘要： A method of fabricating a photovoltaic solar cell is provided. A plurality of generally spherical semiconductor elements are provided. Each of the semiconductor elements has a core and an outer surface surface forming a p-n junction. An anti-reflection coating is deposited on the outer surface of each of the semiconductor elements and each of the semiconductor elements is bonded into a perforated aluminum foil array thereby providing ohmic contact to a first side of the p-n junction. The anti-reflection coating is removed from a portion of each of the semiconductor elements and then the core is exposed, thereby allowing ohmic contact to be made to a second side of the p-n junction.

摘要翻译： 提供一种制造光伏太阳能电池的方法。 提供多个大致球形的半导体元件。 每个半导体元件具有形成p-n结的芯和外表面表面。 在每个半导体元件的外表面上沉积防反射涂层，并且将每个半导体元件结合到穿孔铝箔阵列中，从而向p-n结的第一侧提供欧姆接触。 从每个半导体元件的一部分去除防反射涂层，然后将芯暴露，由此允许欧姆接触到p-n结的第二侧。

公开(公告)号：US08309840B2

公开(公告)日：2012-11-13

申请号：US11192324

申请日：2005-07-27

申请人： Gary Don Stevens ,  Milfred Dale Hammerbacher ,  Glen Alexander Crossley ,  Brett Michael Barnes ,  My Thi Hoai Hoang

发明人： Gary Don Stevens ,  Milfred Dale Hammerbacher ,  Glen Alexander Crossley ,  Brett Michael Barnes ,  My Thi Hoai Hoang

IPC分类号： H01L25/00 ,  H01L31/04

CPC分类号： H02S20/23 ,  F24S20/67 ,  F24S25/61 ,  F24S2020/13 ,  H01L31/048 ,  Y02B10/12 ,  Y02B10/20 ,  Y02E10/47 ,  Y02E10/50

摘要： A solar panel overlay for mounting on an underlying roof deck comprises a substrate and at least one row of photovoltaic cells on the substrate. The photovoltaic cells define a solar collecting surface having an appearance mimicking that of the underlying roof deck. A solar panel overlay assembly comprising a plurality of interconnect solar panel overlays is also provided.

摘要翻译： 用于安装在下面的屋顶甲板上的太阳能电池板覆盖物包括衬底和衬底上的至少一排光伏电池。 光伏电池限定了具有模仿下面的屋顶甲板的外观的太阳能收集表面。 还提供了包括多个互连太阳能电池板覆盖物的太阳能电池板覆盖组件。

公开(公告)号：US5926727A

公开(公告)日：1999-07-20

申请号：US570028

申请日：1995-12-11

申请人： Gary Don Stevens ,  Jeffrey Scott Reynolds

发明人： Gary Don Stevens ,  Jeffrey Scott Reynolds

IPC分类号： C30B31/02 ,  C30B31/08 ,  H01L21/225 ,  H01L31/0288 ,  H01L31/0352 ,  H01L21/22

CPC分类号： C30B31/02 ,  C30B31/08 ,  H01L21/2254 ,  H01L31/0288 ,  H01L31/035281 ,  Y02E10/50

摘要： A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.

摘要翻译： 使用磷酸铵磷掺杂半导体颗粒的方法（10）。 将p掺杂的硅球与预定浓度的磷酸铵的稀释溶液混合。 这些球体被干燥（16,18），然后磷被扩散（20）进入球体以产生浅的或深的p-n结。 在扩散过程中，球体表面形成良好的PSG玻璃层。 利用随后的偏析退火工艺将金属杂质从p-n结附近剥离到玻璃层中。 随后使用随后的HF条带程序去除PSG层。 磷酸铵不是限制性化学品，价格便宜，不构成任何特殊的运输，处理或处置要求。

公开(公告)号：US5763320A

公开(公告)日：1998-06-09

申请号：US570070

申请日：1995-12-11

申请人： Gary Don Stevens ,  Jeffrey Scott Reynolds ,  Louanne Kay Brown

发明人： Gary Don Stevens ,  Jeffrey Scott Reynolds ,  Louanne Kay Brown

IPC分类号： H01L31/0288 ,  H01L31/0352 ,  H01L31/18 ,  H01L21/22

CPC分类号： H01L31/035281 ,  H01L31/0288 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

摘要翻译： 使用硼酸掺杂半导体颗粒以获得p型掺杂颗粒的方法（10,30）。 将硅球或硅粉末与预定浓度的硼酸稀释溶液混合。 将球体干燥（16），然后硼膜被驱动（18）进入球体。 熔融程序将驱动的硼在整个球体中均匀混合。 在硅粉的情况下，将粉末计量（38）成堆并用光学炉熔化（40）。 两种工艺获得具有所需电阻率的p型掺杂硅球体。 硼酸不是限制性化学品，价格便宜，并不构成任何特殊的运输，处理或处置要求。