摘要:
A display panel includes a power line supplying power, and a plurality of pixels connected with the power line, each pixel including a plurality of sub-pixel regions, and receiving the power to display an image. Each of the pixels further includes a plurality of driving thin film transistors and a plurality of light emitting units. Each of the driving thin film transistors are positioned in respective sub-pixel regions to receive the power to output driving signals. Each of the light emitting units are connected to respective driving thin film transistors, have relatively longer lengths in a first direction, and have the same width in a second direction substantially perpendicular to the first direction. One among the plurality of light emitting units is longer than the remaining light emitting units to thereby improve a light emitting efficiency and image display quality of a display panel.
摘要:
A display panel includes a power line supplying power, and a plurality of pixels connected with the power line, each pixel including a plurality of sub-pixel regions, and receiving the power to display an image. Each of the pixels further includes a plurality of driving thin film transistors and a plurality of light emitting units. Each of the driving thin film transistors are positioned in respective sub-pixel regions to receive the power to output driving signals. Each of the light emitting units are connected to respective driving thin film transistors, have relatively longer lengths in a first direction, and have the same width in a second direction substantially perpendicular to the first direction. One among the plurality of light emitting units is longer than the remaining light emitting units to thereby improve a light emitting efficiency and image display quality of a display panel.
摘要:
The present invention relates to an organic light emitting device and a manufacturing method thereof. The present invention discloses an organic light emitting device including: a plurality of scanning signal lines; a first and second contact assistant; a plurality of data lines crossing the scanning signal lines; a driving voltage line; and a first pixel, a second pixel, and a third pixel alternately arranged, wherein each pixel includes: a switching transistor, a driving transistor including an output terminal, a pixel electrode connected to the output terminal, the pixel electrode including at least two layers including a transflective electrode, an organic light emitting member arranged on the pixel electrode, and a common electrode arranged on the organic light emitting member, wherein the first pixel further includes a supplementary member arranged on the pixel electrode, and wherein the first and second contact assistants include the same material as the supplementary member.
摘要:
The present invention relates to an organic light emitting device and a manufacturing method thereof. The present invention discloses an organic light emitting device including: a plurality of scanning signal lines; a first and second contact assistant; a plurality of data lines crossing the scanning signal lines; a driving voltage line; and a first pixel, a second pixel, and a third pixel alternately arranged, wherein each pixel includes: a switching transistor, a driving transistor including an output terminal, a pixel electrode connected to the output terminal, the pixel electrode including at least two layers including a transflective electrode, an organic light emitting member arranged on the pixel electrode, and a common electrode arranged on the organic light emitting member, wherein the first pixel further includes a supplementary member arranged on the pixel electrode, and wherein the first and second contact assistants include the same material as the supplementary member.
摘要:
The present invention relates to an organic light emitting diode display and a method for manufacturing the same, including: a substrate; first signal lines formed on the substrate and including first pad units; second signal lines that intersect the first signal lines and include second pad units; first thin film transistors that are electrically connected to the first signal lines and the second signal lines; second thin film transistors that are electrically connected to the first thin film transistors; pixel electrodes that are electrically connected to the second thin film transistors; common electrodes facing the pixel electrodes; light emitting members that are formed between the pixel electrodes and the common electrodes; contact assistants that are formed on the first pad units and the second pad units; and protective partitions that enclose circumferences of the contact assistants.
摘要:
The present invention relates to an organic light emitting diode display and a method for manufacturing the same, including: a substrate; first signal lines formed on the substrate and including first pad units; second signal lines that intersect the first signal lines and include second pad units; first thin film transistors that are electrically connected to the first signal lines and the second signal lines; second thin film transistors that are electrically connected to the first thin film transistors; pixel electrodes that are electrically connected to the second thin film transistors; common electrodes facing the pixel electrodes; light emitting members that are formed between the pixel electrodes and the common electrodes; contact assistants that are formed on the first pad units and the second pad units; and protective partitions that enclose circumferences of the contact assistants.
摘要:
A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes electrically connected with the semiconductor layer, wherein the gate electrode has a thickness of about 500 Å to about 1500 Å and the gate insulating layer has a thickness of about 1600 Å to about 2500 Å.
摘要:
An organic light emitting diode display includes a substrate main body, a polysilicon semiconductor layer on the substrate main body, a gate insulating layer covering the semiconductor layer, and a gate electrode and a pixel electrode on the gate insulating layer, the gate electrode and the pixel electrode each including a transparent conductive layer portion with a gate metal layer portion on the transparent conductive layer portion, and the pixel electrode including a light emitting area having the transparent conductive layer portion and a non-light emitting area having both the transparent conductive layer portion and the gate metal layer portion.
摘要:
A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.
摘要:
An organic light-emitting display apparatus including a substrate; a black matrix layer formed over the substrate; an insulating layer formed over the black matrix layer; a thin film transistor (TFT) formed over the insulating layer; a pixel electrode connected to the TFT; and an organic layer formed over the pixel electrode. At least one hole is formed in at least one of the black matrix layer and the insulating layer, in a region where the black matrix layer and the insulating layer overlap each other.