公开(公告)号：US20170159169A1

公开(公告)日：2017-06-08

申请号：US14956853

申请日：2015-12-02

Applicant: Ming Chi University of Technology

Inventor： Sheng-Chi CHEN ,  Tsung-Yen KUO ,  Hsin-Chih LIN

IPC: C23C14/34 ,  C23C14/08 ,  H01J37/34 ,  C23C14/35

CPC classification number: H01J37/3426 ,  C23C14/0036 ,  C23C14/085 ,  C23C14/3485 ,  H01J37/3405 ,  H01J37/3467 ,  H01J37/3491

Abstract: The invention provides a process for manufacturing nickel oxide films with high conductivity, comprising steps of: operating a high power impulse magnetron sputtering system, HIPIMS system, in an argon and oxygen mixture, at peak power density higher than 1000 W/cm2 under a low duty cycle; and sputtering a Ni target to form the p-type NiO film with high conductivity on a substrate, the duty cycle=ton/(ton+toff), wherein ton is time of pulse on and toff is time of pulse off.