利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

126 条记录 (耗时 0.028 秒)

    Support structure for free-standing MEMS device and methods for forming the same
    3.
    发明授权
    Support structure for free-standing MEMS device and methods for forming the same 失效
    独立MEMS装置的支撑结构及其形成方法

    公开(公告)号：US07385744B2

    公开(公告)日：2008-06-10

    申请号：US11476998

    申请日：2006-06-28

    申请人： Lior Kogut ,  Ming-Hau Tung ,  Brian Arbuckle

    发明人： Lior Kogut ,  Ming-Hau Tung ,  Brian Arbuckle

    IPC分类号： G02B26/08 ,  G02B26/00

    CPC分类号： B81B3/0072

    摘要： A microelectromechanical (MEMS) device includes a functional layer including a first material and a deformable layer including a second material. The second material is different from the first material. The deformable layer is mechanically coupled to the functional layer at a junction. The functional layer and the deformable layer have substantially equal internal stresses at the junction.

    摘要翻译： 微机电（MEMS）装置包括包括第一材料和包括第二材料的可变形层的功能层。 第二种材料与第一种材料不同。 可变形层在结处机械耦合到功能层。 功能层和可变形层在接合处具有基本相等的内应力。

    Selective etching of MEMS using gaseous halides and reactive co-etchants
    4.
    发明授权
    Selective etching of MEMS using gaseous halides and reactive co-etchants 失效
    使用气态卤化物和反应性辅助蚀刻剂选择性蚀刻MEMS

    公开(公告)号：US07566664B2

    公开(公告)日：2009-07-28

    申请号：US11497726

    申请日：2006-08-02

    申请人： Xiaoming Yan ,  Brian Arbuckle ,  Evgeni Gousev ,  Ming-Hau Tung

    发明人： Xiaoming Yan ,  Brian Arbuckle ,  Evgeni Gousev ,  Ming-Hau Tung

    IPC分类号： H01L21/20

    CPC分类号： G02B26/001 ,  B81B2201/047 ,  B81C1/00595 ,  B81C2201/0132

    摘要： A method for etching a target material in the presence of a structural material with improved selectivity uses a vapor phase etchant and a co-etchant. Embodiments of the method exhibit improved selectivities of from at least about 2-times to at least about 100-times compared with a similar etching process not using a co-etchant. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant. Embodiments of the method are particularly useful in the manufacture of MEMS devices, for example, interferometric modulators. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant, for example, molybdenum and the structural material comprises a dielectric, for example silicon dioxide.

    摘要翻译： 在具有改进的选择性的结构材料存在下蚀刻靶材料的方法使用气相蚀刻剂和共蚀刻剂。 与不使用共蚀刻剂的类似蚀刻工艺相比，该方法的实施例表现出从至少约2倍至至少约100倍的改进的选择性。 在一些实施例中，靶材料包括可由气相蚀刻剂蚀刻的金属。 该方法的实施例在MEMS器件（例如干涉式调制器）的制造中特别有用。 在一些实施例中，靶材料包括可由气相蚀刻剂（例如，钼）蚀刻的金属，并且结构材料包括电介质，例如二氧化硅。

    Selective etching of MEMS using gaseous halides and reactive co-etchants
    6.
    发明申请
    Selective etching of MEMS using gaseous halides and reactive co-etchants 失效
    使用气态卤化物和反应性辅助蚀刻剂选择性蚀刻MEMS

    公开(公告)号：US20080032439A1

    公开(公告)日：2008-02-07

    申请号：US11497726

    申请日：2006-08-02

    申请人： Xiaoming Yan ,  Brian Arbuckle ,  Evgeni Gousev ,  Ming-Hau Tung

    发明人： Xiaoming Yan ,  Brian Arbuckle ,  Evgeni Gousev ,  Ming-Hau Tung

    IPC分类号： H01L21/00

    CPC分类号： G02B26/001 ,  B81B2201/047 ,  B81C1/00595 ,  B81C2201/0132

    摘要： A method for etching a target material in the presence of a structural material with improved selectivity uses a vapor phase etchant and a co-etchant. Embodiments of the method exhibit improved selectivities of from at least about 2-times to at least about 100-times compared with a similar etching process not using a co-etchant. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant. Embodiments of the method are particularly useful in the manufacture of MEMS devices, for example, interferometric modulators. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant, for example, molybdenum and the structural material comprises a dielectric, for example silicon dioxide.

    摘要翻译： 在具有改进的选择性的结构材料存在下蚀刻靶材料的方法使用气相蚀刻剂和共蚀刻剂。 与不使用共蚀刻剂的类似蚀刻工艺相比，该方法的实施例表现出从至少约2倍至至少约100倍的改进的选择性。 在一些实施例中，靶材料包括可由气相蚀刻剂蚀刻的金属。 该方法的实施例在MEMS器件（例如干涉式调制器）的制造中特别有用。 在一些实施例中，靶材料包括可由气相蚀刻剂（例如，钼）蚀刻的金属，并且结构材料包括电介质，例如二氧化硅。

    Support structures for free-standing electromechanical devices
    7.
    发明授权
    Support structures for free-standing electromechanical devices 有权
    独立机电设备的支撑结构

    公开(公告)号：US07835061B2

    公开(公告)日：2010-11-16

    申请号：US11476317

    申请日：2006-06-28

    申请人： Lior Kogut ,  Ming-Hau Tung ,  Brian Arbuckle

    发明人： Lior Kogut ,  Ming-Hau Tung ,  Brian Arbuckle

    IPC分类号： G02B26/00

    CPC分类号： B81B3/0072 ,  G02B26/001

    摘要： A microelectromechanical (MEMS) device includes a functional layer including a first material, a deformable layer including a second material different from the first material, and a connecting element including the first material. The connecting element is mechanically coupled to the deformable layer and the functional layer. The connecting element and the deformable layer form an interface between the first material and the second material. The interface is spaced from the functional layer.

    摘要翻译： 微机电（MEMS）装置包括功能层，其包括第一材料，可变形层，其包括不同于第一材料的第二材料，以及包括第一材料的连接元件。 连接元件机械耦合到可变形层和功能层。 连接元件和可变形层在第一材料和第二材料之间形成界面。 界面与功能层间隔开。

    Support structure for free-standing MEMS device and methods for forming the same
    8.
    发明申请
    Support structure for free-standing MEMS device and methods for forming the same 有权
    独立MEMS装置的支撑结构及其形成方法

    公开(公告)号：US20080055707A1

    公开(公告)日：2008-03-06

    申请号：US11476317

    申请日：2006-06-28

    申请人： Lior Kogut ,  Ming-Hau Tung ,  Brian Arbuckle

    发明人： Lior Kogut ,  Ming-Hau Tung ,  Brian Arbuckle

    IPC分类号： G02B26/00

    CPC分类号： B81B3/0072 ,  G02B26/001

    摘要： A microelectromechanical (MEMS) device includes a functional layer including a first material, a deformable layer including a second material different from the first material, and a connecting element including the first material. The connecting element is mechanically coupled to the deformable layer and the functional layer. The connecting element and the deformable layer form an interface between the first material and the second material. The interface is spaced from the functional layer.

    摘要翻译： 微机电（MEMS）装置包括功能层，其包括第一材料，可变形层，其包括不同于第一材料的第二材料，以及包括第一材料的连接元件。 连接元件机械耦合到可变形层和功能层。 连接元件和可变形层在第一材料和第二材料之间形成界面。 界面与功能层间隔开。

    Apparatus and method for reducing slippage between structures in an interferometric modulator
    9.
    发明授权
    Apparatus and method for reducing slippage between structures in an interferometric modulator 有权
    用于减少干涉式调制器中结构之间滑动的装置和方法

    公开(公告)号：US07924494B2

    公开(公告)日：2011-04-12

    申请号：US12631576

    申请日：2009-12-04

    申请人： Ming-Hau Tung ,  Brian W. Arbuckle ,  Philip Don Floyd ,  William Cummings

    发明人： Ming-Hau Tung ,  Brian W. Arbuckle ,  Philip Don Floyd ,  William Cummings

    IPC分类号： G02B26/00

    CPC分类号： G02B26/001

    摘要： A support structure within an interferometric modulator device may contact various other structures within the device. Increased bond strengths between the support structure and the other structures may be achieved in various ways, such as by providing roughened surfaces and/or adhesive materials at the interfaces between the support structures and the other structures. In an embodiment, increased adhesion is achieved between a support structure and a substrate layer. In another embodiment, increased adhesion is achieved between a support structure and a moveable layer. Increased adhesion may reduce undesirable slippage between the support structures and the other structures to which they are attached within the interferometric modulator.

    摘要翻译： 干涉式调制器装置内的支撑结构可接触装置内的各种其它结构。 支撑结构和其他结构之间的增加的结合强度可以以各种方式实现，例如通过在支撑结构和其它结构之间的界面处提供粗糙化的表面和/或粘合材料。 在一个实施方案中，在支撑结构和基底层之间实现增加的粘附。 在另一个实施例中，在支撑结构和可移动层之间实现增加的粘附。 增加的粘合力可以减少支撑结构和它们在干涉式调制器内附着的其它结构之间的不希望的滑动。

    Spatial light modulator with integrated optical compensation structure
    10.
    发明申请
    Spatial light modulator with integrated optical compensation structure 有权
    具有集成光学补偿结构的空间光调制器

    公开(公告)号：US20050179977A1

    公开(公告)日：2005-08-18

    申请号：US11036965

    申请日：2005-01-14

    申请人： Clarence Chui ,  Jeffrey Sampsell ,  William Cummings ,  Ming-Hau Tung

    发明人： Clarence Chui ,  Jeffrey Sampsell ,  William Cummings ,  Ming-Hau Tung

    IPC分类号： G02B26/00 ,  G02F1/1335 ,  G02F1/136

    CPC分类号： G02F1/21 ,  G02B26/001 ,  G02F1/1335 ,  G02F2001/13356

    摘要： A spatial light modulator comprises an integrated optical compensation structure, e.g., an optical compensation structure arranged between a substrate and a plurality of individually addressable light-modulating elements, or an optical compensation structure located on the opposite side of the light-modulating elements from the substrate. The individually addressable light-modulating elements are configured to modulate light transmitted through or reflected from the transparent substrate. Methods for making such spatial light modulators involve fabricating an optical compensation structure over a substrate and fabricating a plurality of individually addressable light-modulating elements over the optical compensation structure. The optical compensation structure may be a passive optical compensation structure. The optical compensation structure may include one or more of a supplemental frontlighting source, a diffuser, a black mask, a diffractive optical element, a color filter, an anti-reflective layer, a structure that scatters light, a microlens array, and a holographic film.

    摘要翻译： 空间光调制器包括集成的光学补偿结构，例如，布置在基板和多个可单独寻址的光调制元件之间的光学补偿结构，或位于光调制元件的相对侧上的光学补偿结构 基质。 可单独寻址的光调制元件被配置为调制透射通过或从透明基板反射的光。 制造这种空间光调制器的方法包括在衬底上制造光学补偿结构，并在光学补偿结构上制造多个单独可寻址的光调制元件。 光学补偿结构可以是无源光学补偿结构。 光学补偿结构可以包括补充前照明光源，漫射器，黑色掩模，衍射光学元件，滤色器，抗反射层，散射光的结构，微透镜阵列和全息图中的一个或多个 电影。