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    Portable etch chamber
    3.
    发明申请
    Portable etch chamber 审中-公开
    便携式蚀刻室

    公开(公告)号：US20060065366A1

    公开(公告)日：2006-03-30

    申请号：US11045588

    申请日：2005-01-28

    申请人： William Cummings ,  Brian Arbuckle ,  Philip Floyd

    发明人： William Cummings ,  Brian Arbuckle ,  Philip Floyd

    IPC分类号： C03C25/68 ,  H01L21/306

    CPC分类号： H01L21/67069

    摘要： An etching chamber is configured to support a MEMS substrate within the chamber. The etching chamber is configured to be relatively easy to move and attach to an etch station that includes a source of vapor or gaseous etchant, a source of purge gas and/or a vacuum source. The portable etching chamber may facilitate a process for etching the MEMS substrate contained therein. For example, a MEMS substrate in such an etching chamber may be etched by connecting the chamber into an etch station and exposing the MEMS substrate to an etchant in order to etch the MEMS substrate. The substrate can be moved to or from the etch station within the portable etching chamber. In preferred embodiments, the MEMS substrate is an interferometric modulator and the etchant is XeF2.

    摘要翻译： 蚀刻室被配置为支撑腔室内的MEMS衬底。 蚀刻室被配置为相对容易地移动并附着到包括蒸气源或气体蚀刻剂源，净化气体源和/或真空源的蚀刻站。 便携式蚀刻室可以有助于蚀刻其中包含的MEMS基板的工艺。 例如，可以通过将腔室连接到蚀刻站中来蚀刻这种蚀刻室中的MEMS衬底，并将MEMS衬底暴露于蚀刻剂以蚀刻MEMS衬底。 衬底可以移动到便携式蚀刻室内或从蚀刻站移动。 在优选实施例中，MEMS衬底是干涉式调制器，蚀刻剂是XeF 2。

    Support structure for free-standing MEMS device and methods for forming the same
    4.
    发明授权
    Support structure for free-standing MEMS device and methods for forming the same 失效
    独立MEMS装置的支撑结构及其形成方法

    公开(公告)号：US07385744B2

    公开(公告)日：2008-06-10

    申请号：US11476998

    申请日：2006-06-28

    申请人： Lior Kogut ,  Ming-Hau Tung ,  Brian Arbuckle

    发明人： Lior Kogut ,  Ming-Hau Tung ,  Brian Arbuckle

    IPC分类号： G02B26/08 ,  G02B26/00

    CPC分类号： B81B3/0072

    摘要： A microelectromechanical (MEMS) device includes a functional layer including a first material and a deformable layer including a second material. The second material is different from the first material. The deformable layer is mechanically coupled to the functional layer at a junction. The functional layer and the deformable layer have substantially equal internal stresses at the junction.

    摘要翻译： 微机电（MEMS）装置包括包括第一材料和包括第二材料的可变形层的功能层。 第二种材料与第一种材料不同。 可变形层在结处机械耦合到功能层。 功能层和可变形层在接合处具有基本相等的内应力。

    Selective etching of MEMS using gaseous halides and reactive co-etchants
    5.
    发明申请
    Selective etching of MEMS using gaseous halides and reactive co-etchants 失效
    使用气态卤化物和反应性辅助蚀刻剂选择性蚀刻MEMS

    公开(公告)号：US20080032439A1

    公开(公告)日：2008-02-07

    申请号：US11497726

    申请日：2006-08-02

    申请人： Xiaoming Yan ,  Brian Arbuckle ,  Evgeni Gousev ,  Ming-Hau Tung

    发明人： Xiaoming Yan ,  Brian Arbuckle ,  Evgeni Gousev ,  Ming-Hau Tung

    IPC分类号： H01L21/00

    CPC分类号： G02B26/001 ,  B81B2201/047 ,  B81C1/00595 ,  B81C2201/0132

    摘要： A method for etching a target material in the presence of a structural material with improved selectivity uses a vapor phase etchant and a co-etchant. Embodiments of the method exhibit improved selectivities of from at least about 2-times to at least about 100-times compared with a similar etching process not using a co-etchant. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant. Embodiments of the method are particularly useful in the manufacture of MEMS devices, for example, interferometric modulators. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant, for example, molybdenum and the structural material comprises a dielectric, for example silicon dioxide.

    摘要翻译： 在具有改进的选择性的结构材料存在下蚀刻靶材料的方法使用气相蚀刻剂和共蚀刻剂。 与不使用共蚀刻剂的类似蚀刻工艺相比，该方法的实施例表现出从至少约2倍至至少约100倍的改进的选择性。 在一些实施例中，靶材料包括可由气相蚀刻剂蚀刻的金属。 该方法的实施例在MEMS器件（例如干涉式调制器）的制造中特别有用。 在一些实施例中，靶材料包括可由气相蚀刻剂（例如，钼）蚀刻的金属，并且结构材料包括电介质，例如二氧化硅。

    Support structures for free-standing electromechanical devices
    6.
    发明授权
    Support structures for free-standing electromechanical devices 有权
    独立机电设备的支撑结构

    公开(公告)号：US07835061B2

    公开(公告)日：2010-11-16

    申请号：US11476317

    申请日：2006-06-28

    申请人： Lior Kogut ,  Ming-Hau Tung ,  Brian Arbuckle

    发明人： Lior Kogut ,  Ming-Hau Tung ,  Brian Arbuckle

    IPC分类号： G02B26/00

    CPC分类号： B81B3/0072 ,  G02B26/001

    摘要： A microelectromechanical (MEMS) device includes a functional layer including a first material, a deformable layer including a second material different from the first material, and a connecting element including the first material. The connecting element is mechanically coupled to the deformable layer and the functional layer. The connecting element and the deformable layer form an interface between the first material and the second material. The interface is spaced from the functional layer.

    摘要翻译： 微机电（MEMS）装置包括功能层，其包括第一材料，可变形层，其包括不同于第一材料的第二材料，以及包括第一材料的连接元件。 连接元件机械耦合到可变形层和功能层。 连接元件和可变形层在第一材料和第二材料之间形成界面。 界面与功能层间隔开。

    Support structure for free-standing MEMS device and methods for forming the same
    7.
    发明申请
    Support structure for free-standing MEMS device and methods for forming the same 有权
    独立MEMS装置的支撑结构及其形成方法

    公开(公告)号：US20080055707A1

    公开(公告)日：2008-03-06

    申请号：US11476317

    申请日：2006-06-28

    申请人： Lior Kogut ,  Ming-Hau Tung ,  Brian Arbuckle

    发明人： Lior Kogut ,  Ming-Hau Tung ,  Brian Arbuckle

    IPC分类号： G02B26/00

    CPC分类号： B81B3/0072 ,  G02B26/001

    摘要： A microelectromechanical (MEMS) device includes a functional layer including a first material, a deformable layer including a second material different from the first material, and a connecting element including the first material. The connecting element is mechanically coupled to the deformable layer and the functional layer. The connecting element and the deformable layer form an interface between the first material and the second material. The interface is spaced from the functional layer.

    摘要翻译： 微机电（MEMS）装置包括功能层，其包括第一材料，可变形层，其包括不同于第一材料的第二材料，以及包括第一材料的连接元件。 连接元件机械耦合到可变形层和功能层。 连接元件和可变形层在第一材料和第二材料之间形成界面。 界面与功能层间隔开。

    Selective etching of MEMS using gaseous halides and reactive co-etchants
    8.
    发明授权
    Selective etching of MEMS using gaseous halides and reactive co-etchants 失效
    使用气态卤化物和反应性辅助蚀刻剂选择性蚀刻MEMS

    公开(公告)号：US07566664B2

    公开(公告)日：2009-07-28

    申请号：US11497726

    申请日：2006-08-02

    申请人： Xiaoming Yan ,  Brian Arbuckle ,  Evgeni Gousev ,  Ming-Hau Tung

    发明人： Xiaoming Yan ,  Brian Arbuckle ,  Evgeni Gousev ,  Ming-Hau Tung

    IPC分类号： H01L21/20

    CPC分类号： G02B26/001 ,  B81B2201/047 ,  B81C1/00595 ,  B81C2201/0132

    摘要： A method for etching a target material in the presence of a structural material with improved selectivity uses a vapor phase etchant and a co-etchant. Embodiments of the method exhibit improved selectivities of from at least about 2-times to at least about 100-times compared with a similar etching process not using a co-etchant. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant. Embodiments of the method are particularly useful in the manufacture of MEMS devices, for example, interferometric modulators. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant, for example, molybdenum and the structural material comprises a dielectric, for example silicon dioxide.

    摘要翻译： 在具有改进的选择性的结构材料存在下蚀刻靶材料的方法使用气相蚀刻剂和共蚀刻剂。 与不使用共蚀刻剂的类似蚀刻工艺相比，该方法的实施例表现出从至少约2倍至至少约100倍的改进的选择性。 在一些实施例中，靶材料包括可由气相蚀刻剂蚀刻的金属。 该方法的实施例在MEMS器件（例如干涉式调制器）的制造中特别有用。 在一些实施例中，靶材料包括可由气相蚀刻剂（例如，钼）蚀刻的金属，并且结构材料包括电介质，例如二氧化硅。

    Optical interference display panel and manufacturing method thereof
    10.
    发明授权
    Optical interference display panel and manufacturing method thereof 有权
    光干涉显示面板及其制造方法

    公开(公告)号：US07532385B2

    公开(公告)日：2009-05-12

    申请号：US10807128

    申请日：2004-03-24

    申请人： Wen-Jian Lin ,  Brian Arbuckle ,  Brian Gally ,  Philip Floyd ,  Lauren Palmateer

    发明人： Wen-Jian Lin ,  Brian Arbuckle ,  Brian Gally ,  Philip Floyd ,  Lauren Palmateer

    IPC分类号： G02B26/00 ,  H01L21/00

    CPC分类号： G02B26/001 ,  B81B7/0012 ,  B81B2201/045

    摘要： A first electrode and a sacrificial layer are sequentially formed on a substrate, and then first openings for forming supports inside are formed in the first electrode and the sacrificial layer. The supports are formed in the first openings, and then a second electrode is formed on the sacrificial layer and the supports, thus forming a micro electro mechanical system structure. Afterward, an adhesive is used to adhere and fix a protection structure to the substrate for forming a chamber to enclose the micro electro mechanical system structure, and at least one second opening is preserved on sidewalls of the chamber. A release etch process is subsequently employed to remove the sacrificial layer through the second opening in order to form cavities in an optical interference reflection structure. Finally, the second opening is closed to seal the optical interference reflection structure between the substrate and the protection structure.

    摘要翻译： 第一电极和牺牲层依次形成在基板上，然后在第一电极和牺牲层中形成用于形成支撑件的第一开口。 支撑件形成在第一开口中，然后在牺牲层和支撑件上形成第二电极，从而形成微机电系统结构。 之后，使用粘合剂将保护结构粘附并固定到基底上以形成腔室以包围微机电系统结构，并且至少一个第二开口保留在腔室的侧壁上。 随后采用释放蚀刻工艺以通过第二开口去除牺牲层，以便在光学干涉反射结构中形成空腔。 最后，关闭第二个开口以密封衬底和保护结构之间的光学干涉反射结构。