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    Method of forming a self-aligned contact of a DRAM cell
    2.
    发明授权
    Method of forming a self-aligned contact of a DRAM cell 失效
    形成DRAM单元的自对准接触的方法

    公开(公告)号：US5885895A

    公开(公告)日：1999-03-23

    申请号：US826143

    申请日：1997-03-27

    申请人： Ming-Hua Liu ,  Chuck Chen

    发明人： Ming-Hua Liu ,  Chuck Chen

    IPC分类号： H01L21/60 ,  H01L21/8242

    CPC分类号： H01L27/10873 ,  H01L21/76897

    摘要： A method of forming a self-aligned contact of a DRAM cell includes providing a substrate having a MOS transistor. The MOS transistor includes a gate and a source/drain region. A first insulating layer, a second insulating layer and a third insulating layer are formed over the surface of the substrate in succession. The third insulating layer is planarized. A contact window mask is formed above the third insulating layer. Using the contact window mask as a cover, the third insulating layer is removed using anisotropic dry etching and isotropic wet etching. Then, a portion of the second insulating layer and a portion of the first insulating layer are removed sequentially to expose the source/drain region so that a self-aligned contact is formed.

    摘要翻译： 形成DRAM单元的自对准接触的方法包括提供具有MOS晶体管的衬底。 MOS晶体管包括栅极和源极/漏极区域。 在基板的表面上依次形成第一绝缘层，第二绝缘层和第三绝缘层。 第三绝缘层被平坦化。 在第三绝缘层上形成接触窗口罩。 使用接触窗口掩模作为覆盖物，使用各向异性干法蚀刻和各向同性湿法蚀刻去除第三绝缘层。 然后，依次除去第二绝缘层的一部分和第一绝缘层的一部分，露出源/漏区，从而形成自对准接触。

    Test key structure
    3.
    发明申请
    Test key structure 有权
    测试键结构

    公开(公告)号：US20060192200A1

    公开(公告)日：2006-08-31

    申请号：US11066991

    申请日：2005-02-25

    申请人： Chuck Chen ,  Yo-Yi Gong ,  Le-Tien Jung

    发明人： Chuck Chen ,  Yo-Yi Gong ,  Le-Tien Jung

    IPC分类号： H01L23/58

    CPC分类号： H01L22/34

    摘要： A test key structure includes a substrate, a closed loop, a plurality of spacers, a plurality of first and second doping regions and a plurality of contacts. The closed loop having two conductive lines and two connection portions is located on the substrate. Each connection portion connects to one end of the conductive line and surrounds a contact region. The spacers are disposed at the edge of the closed loop to cover the substrate between the conductive lines. The first doping regions are located in the substrate outside the closed loop and the spacers. The second doping regions are located in the substrate under the spacers. The contacts are electrically connected to the first doping regions within the contact regions. Because the spacers and the conductive lines are incorporated into a test key structure, the influence of spacers upon the entire device can be more accurately determined.

    摘要翻译： 测试键结构包括基板，闭环，多个间隔物，多个第一和第二掺杂区域以及多个触点。 具有两个导线和两个连接部分的闭环位于基板上。 每个连接部分连接到导电线的一端并且包围接触区域。 间隔件设置在闭环的边缘以覆盖导电线之间的基板。 第一掺杂区位于封闭环外部的衬底和间隔物中。 第二掺杂区域位于衬垫下的衬垫下。 触点电连接到接触区域内的第一掺杂区域。 由于间隔物和导线被结合到测试键结构中，因此可以更精确地确定间隔物对整个器件的影响。

    Test key structure
    4.
    发明授权
    Test key structure 有权
    测试键结构

    公开(公告)号：US07279707B2

    公开(公告)日：2007-10-09

    申请号：US11066991

    申请日：2005-02-25

    申请人： Chuck Chen ,  Yo-Yi Gong ,  Le-Tien Jung

    发明人： Chuck Chen ,  Yo-Yi Gong ,  Le-Tien Jung

    IPC分类号： H01L23/58

    CPC分类号： H01L22/34

    摘要： A test key structure includes a substrate, a closed loop, a plurality of spacers, a plurality of first and second doping regions and a plurality of contacts. The closed loop having two conductive lines and two connection portions is located on the substrate. Each connection portion connects to one end of the conductive line and surrounds a contact region. The spacers are disposed at the edge of the closed loop to cover the substrate between the conductive lines. The first doping regions are located in the substrate outside the closed loop and the spacers. The second doping regions are located in the substrate under the spacers. The contacts are electrically connected to the first doping regions within the contact regions. Because the spacers and the conductive lines are incorporated into a test key structure, the influence of spacers upon the entire device can be more accurately determined.

    摘要翻译： 测试键结构包括基板，闭环，多个间隔物，多个第一和第二掺杂区域以及多个触点。 具有两个导线和两个连接部分的闭环位于基板上。 每个连接部分连接到导电线的一端并且包围接触区域。 间隔件设置在闭环的边缘以覆盖导电线之间的基板。 第一掺杂区位于封闭环外部的衬底和间隔物中。 第二掺杂区域位于衬垫下的衬垫下。 触点电连接到接触区域内的第一掺杂区域。 由于间隔物和导线被结合到测试键结构中，因此可以更精确地确定间隔物对整个器件的影响。

    Sliding unit
    5.
    发明授权
    Sliding unit 失效
    滑动单元

    公开(公告)号：US5380098A

    公开(公告)日：1995-01-10

    申请号：US147840

    申请日：1993-11-04

    申请人： Rong-Hong Huang ,  Kun-Lung Tsai ,  Hsi-Yen Chen ,  Chuck Chen ,  Tju-Yin Chang

    发明人： Rong-Hong Huang ,  Kun-Lung Tsai ,  Hsi-Yen Chen ,  Chuck Chen ,  Tju-Yin Chang

    IPC分类号： F16C21/00 ,  F16C29/00 ,  F16C29/04

    CPC分类号： F16C29/045 ,  F16C21/00 ,  F16C29/00

    摘要： A sliding unit includes a load-receiving device for permitting a load to be received thereon, a guiding device slidably mounting thereon the load-receiving device for permitting a direct relative sliding motion therebetween, and a load-sharing device mounted between the load-receiving device and the guiding device and capable of being in a rolling motion therebetween for resulting in a rolling contact effect therebetween. Such sliding unit can meet the demand of a high positioning precision/a high movement stability/a smaller friction coefficient/a better rigidity/a better vibration-resistivity.

    摘要翻译： 滑动单元包括用于允许在其上容纳负载的负载接收装置，引导装置可滑动地安装在其上的负载接收装置以允许它们之间的直接相对滑动;以及负载共享装置，其安装在负载接收 装置和引导装置，并且能够在其间进行滚动运动，从而导致它们之间的滚动接触效应。 这种滑动单元可以满足高定位精度/高运动稳定性/较小摩擦系数/更好的刚性/更好的抗震性的要求。