PIXEL STRUCTURE
    1.
    发明申请
    PIXEL STRUCTURE 有权
    像素结构

    公开(公告)号:US20110297947A1

    公开(公告)日:2011-12-08

    申请号:US13214228

    申请日:2011-08-21

    IPC分类号: H01L29/786

    摘要: A pixel structure having the following structure is provided. A light-shielding layer with a flat layer covering thereon is disposed on a substrate. A channel layer, a data line and a first pad are disposed on the flat layer. A source and a drain partially cover two sides of the channel layer. A gate dielectric layer with a gate, a scan line and a second pad disposed thereon covering the channel layer, the source and the data line exposes the drain and the first pad. A protection layer covering the gate and the scan line exposes the drain, the first and second pads. A patterned transparent conductive layer includes a pixel electrode disposed on the protection layer, a first retain portion disposed on the first pad and a second retain portion disposed on the second pad.

    摘要翻译: 提供具有以下结构的像素结构。 覆盖有平坦层的遮光层设置在基板上。 通道层,数据线和第一焊盘设置在平坦层上。 源极和漏极部分地覆盖沟道层的两侧。 具有栅极,扫描线和布置在其上的第二焊盘的栅介质层覆盖沟道层,源极和数据线暴露漏极和第一焊盘。 覆盖栅极和扫描线的保护层暴露出漏极,第一和第二焊盘。 图案化的透明导电层包括设置在保护层上的像素电极,设置在第一焊盘上的第一保持部分和设置在第二焊盘上的第二保持部分。

    PIXEL STRUCTURE AND FABRICATING METHOD THEREOF
    2.
    发明申请
    PIXEL STRUCTURE AND FABRICATING METHOD THEREOF 有权
    像素结构及其制作方法

    公开(公告)号:US20090057666A1

    公开(公告)日:2009-03-05

    申请号:US12055326

    申请日:2008-03-26

    IPC分类号: H01L31/0232 H01L21/02

    摘要: A pixel structure and a fabrication method thereof are provided. A substrate with a light-shielding layer and a flat layer formed thereon is provided. A first photomask process is conducted to pattern a first metal layer and a semiconductor layer for forming a source, a drain, a channel layer, a data line and a first pad. A second photomask process is conducted to pattern the protection layer, the second metal layer and the gate dielectric layer for forming a gate, a scan line and a second pad, and a part of the drain is exposed. A third photomask process is conducted to pattern a transparent conductive layer for forming a pixel electrode.

    摘要翻译: 提供了像素结构及其制造方法。 提供具有遮光层和形成在其上的平坦层的基板。 进行第一光掩模工艺以对用于形成源极,漏极,沟道层,数据线和第一焊盘的第一金属层和半导体层进行图案化。 进行第二光掩模处理以对用于形成栅极,扫描线和第二焊盘的保护层,第二金属层和栅极电介质层进行图案化,并且漏极的一部分被暴露。 进行第三光掩模工艺以对用于形成像素电极的透明导电层进行图案化。

    Pixel structure
    3.
    发明授权
    Pixel structure 有权
    像素结构

    公开(公告)号:US08586986B2

    公开(公告)日:2013-11-19

    申请号:US13214228

    申请日:2011-08-21

    IPC分类号: H01L27/12 H01L29/786

    摘要: A pixel structure having the following structure is provided. A light-shielding layer with a flat layer covering thereon is disposed on a substrate. A channel layer, a data line and a first pad are disposed on the flat layer. A source and a drain partially cover two sides of the channel layer. A gate dielectric layer with a gate, a scan line and a second pad disposed thereon covering the channel layer, the source and the data line exposes the drain and the first pad. A protection layer covering the gate and the scan line exposes the drain, the first and second pads. A patterned transparent conductive layer includes a pixel electrode disposed on the protection layer, a first retain portion disposed on the first pad and a second retain portion disposed on the second pad.

    摘要翻译: 提供具有以下结构的像素结构。 覆盖有平坦层的遮光层设置在基板上。 通道层,数据线和第一焊盘设置在平坦层上。 源极和漏极部分地覆盖沟道层的两侧。 具有栅极,扫描线和布置在其上的第二焊盘的栅介质层覆盖沟道层,源极和数据线暴露漏极和第一焊盘。 覆盖栅极和扫描线的保护层暴露出漏极,第一和第二焊盘。 图案化的透明导电层包括设置在保护层上的像素电极,设置在第一焊盘上的第一保持部分和设置在第二焊盘上的第二保持部分。

    Pixel structure and fabricating method thereof
    4.
    发明授权
    Pixel structure and fabricating method thereof 有权
    像素结构及其制造方法

    公开(公告)号:US08030652B2

    公开(公告)日:2011-10-04

    申请号:US12055326

    申请日:2008-03-26

    IPC分类号: H01L29/04 H01L29/10 H01L31/00

    摘要: A pixel structure and a fabrication method thereof are provided. A substrate with a light-shielding layer and a flat layer formed thereon is provided. A first photomask process is conducted to pattern a first metal layer and a semiconductor layer for forming a source, a drain, a channel layer, a data line and a first pad. A second photomask process is conducted to pattern the protection layer, the second metal layer and the gate dielectric layer for forming a gate, a scan line and a second pad, and a part of the drain is exposed. A third photomask process is conducted to pattern a transparent conductive layer for forming a pixel electrode.

    摘要翻译: 提供了像素结构及其制造方法。 提供具有遮光层和形成在其上的平坦层的基板。 进行第一光掩模工艺以对用于形成源极,漏极,沟道层,数据线和第一焊盘的第一金属层和半导体层进行图案化。 进行第二光掩模处理以对用于形成栅极,扫描线和第二焊盘的保护层,第二金属层和栅极电介质层进行图案化,并且漏极的一部分被暴露。 进行第三光掩模工艺以对用于形成像素电极的透明导电层进行图案化。

    Method and apparatus for creating a comprehensive response model for a sheet forming machine
    5.
    发明授权
    Method and apparatus for creating a comprehensive response model for a sheet forming machine 有权
    用于创建片材成型机综合响应模型的方法和装置

    公开(公告)号:US08209048B2

    公开(公告)日:2012-06-26

    申请号:US12352328

    申请日:2009-01-12

    IPC分类号: G06F19/00

    CPC分类号: D21G9/0027

    摘要: A method and apparatus for generating a comprehensive response model for a sheet forming machine are provided. A finite number of critical points and a response type are used to create a continuous response profile for each actuator zone. The continuous response profile for each actuator zone is discretized into a discrete response profile based on the resolution appropriate for an application. A multi-zone response model for each pair of actuator set and sheet property profile is created from the discretized response profile of the actuator zones in the actuator set. The comprehensive response model for a multivariable sheet-forming machine is created from a collection of multi-zone response models for multiple pairs of actuator sets and sheet property profiles.

    摘要翻译: 提供了一种用于生成片材成形机的综合响应模型的方法和装置。 使用有限数量的临界点和响应类型来为每个执行器区域创建连续响应曲线。 基于适用于应用的分辨率,将每个致动器区域的连续响应曲线离散化为离散响应曲线。 由致动器组中的致动器区域的离散响应曲线创建用于每对致动器组和片材性质轮廓的多区域响应模型。 多变量纸张成型机的综合响应模型是从多对执行器集合和纸张属性轮廓的多区域响应模型的集合创建的。

    Methods for modeling two-dimensional responses of cross-machine direction actuators in sheet-forming processes

    公开(公告)号:US06233495B1

    公开(公告)日:2001-05-15

    申请号:US09096622

    申请日:1998-06-12

    申请人: Shih-Chin Chen

    发明人: Shih-Chin Chen

    IPC分类号: G06F1900

    CPC分类号: D21G9/0027 G01N33/346

    摘要: A plurality of random probing sequences are used to perturb a corresponding plurality of cross-machine direction (CD) actuators of a web manufacturing machine. The web of sheet material is measured as the CD actuators are perturbed. The global process machine direction (MD) dynamics is estimated and a CD response is estimated for each of the plurality of CD actuators using the plurality of random probing sequences, measurements of the web of sheet material and the estimated global process MD dynamics. The estimated global process MD dynamics and the estimated CD responses form 2D responses for the plurality of CD actuators. To refine the 2D responses, the estimates of global process MD dynamics, and CD responses for each of the plurality of CD actuators are iterated. The actuator dynamics of the plurality of CD actuators may also be estimated and used in the estimates of the global process MD dynamics of the plurality of CD actuators and CD responses for each of the plurality of CD actuators. Variations that are not associated with actuator responses are removed from the estimated CD responses, for example by filtering. The estimated CD responses may be further refined by selecting one of the CD responses as a reference response. All remaining CD responses are shifted into alignment with the reference response to determine relative CD response locations and to define a group of overlapping CD responses. Using iterative techniques, a mean response is determined from a group of overlapping CD responses and variation bounds are set above and below the mean response. A family of probable CD responses are generated within the variation bounds and a most probable response is selected from the family of probable responses for each CD actuator response. The CD response for each CD actuator is replaced with the most probable response shifted by an appropriate amount for each CD actuator and multiplied by an optimal gain.

    Automated optimization of cross machine direction profile control performance for sheet making processes
    7.
    发明授权
    Automated optimization of cross machine direction profile control performance for sheet making processes 失效
    自动优化制版过程中横向机器方向轮廓控制的性能

    公开(公告)号:US06564117B1

    公开(公告)日:2003-05-13

    申请号:US09592921

    申请日:2000-06-13

    IPC分类号: G06F766

    CPC分类号: D21G9/0027

    摘要: The CD profile of a web of material being produced is monitored and controlled to update CD control settings on-line so that changes in the operation of a machine manufacturing the web can be corrected before significant profile deviations from a desired CD profile target result. Detected variances in the profile that satisfy a search criteria initiate searches for improved CD control settings. The CD control of the present application recognizes CD actuator mapping misalignments, determines improved CD control settings and applies the improved CD control settings to fine tune a CD controller and thereby improve upon or correct mapping misalignments. The CD control of the present application also recognizes non-smoothness of the setpoints of the CD actuators and controls the smoothness of the setpoints. Recognition and correction of either CD actuator mapping misalignments or CD actuator setpoint smoothness or both can be performed by the automated optimization of the present application.

    摘要翻译: 监视和控制正在生产的材料网的CD轮廓,以在线更新CD控制设置,使得可以在显着的轮廓偏离期望的CD轮廓目标结果之前校正制造网的机器的操作的变化。 符合搜索条件的配置文件中检测到的差异将启动搜索以改进CD控制设置。 本应用程序的CD控制识别CD致动器映射未对准,确定改进的CD控制设置并应用改进的CD控制设置以微调CD控制器,从而改进或校正映射未对准。 本申请的CD控制还识别CD致动器的设定点的不平滑度并且控制设定点的平滑度。 可以通过本申请的自动优化来执行CD执行器映射未对准或CD致动器设定值平滑度的识别和校正。

    DETERMINATION OF CD AND/OR MD VARIATIONS FROM SCANNING MEASUREMENTS OF A SHEET OF MATERIAL
    8.
    发明申请
    DETERMINATION OF CD AND/OR MD VARIATIONS FROM SCANNING MEASUREMENTS OF A SHEET OF MATERIAL 有权
    CD和/或MD变化的测定从材料表的扫描测量

    公开(公告)号:US20120278032A1

    公开(公告)日:2012-11-01

    申请号:US13457870

    申请日:2012-04-27

    申请人: Shih-Chin Chen

    发明人: Shih-Chin Chen

    IPC分类号: G06F15/00

    摘要: CD variations and/or MD variations in scan measurements are determined from spectral components of power spectra of scan measurements taken using two or more scanning speeds. Dominant spectral components having the same spatial frequencies identify CD variations and dominant spectral components having the same temporal frequencies identify MD variations. Dominant spectral components are extracted from a noisy power spectrum (PS) by sorting all spectral components into an ordered PS. A first polynomial representing background noise of the ordered PS is used to set a first threshold. Spectral components of the ordered PS that exceed the first threshold are removed to form a noise PS. A second polynomial representing the noise PS is used to set a second threshold. Spectral components of the PS that exceed the second threshold are identified as dominant spectral components of the PS.

    摘要翻译: 扫描测量中的CD变化和/或MD变化由使用两个或多个扫描速度进行的扫描测量的功率谱的光谱分量确定。 具有相同空间频率的主要谱分量识别CD变化,并且具有相同时间频率的主要谱分量标识MD变化。 通过将所有光谱分量排序成有序PS,从噪声功率谱(PS)中提取主要谱分量。 表示有序PS的背景噪声的第一多项式用于设定第一阈值。 去除超过第一阈值的有序PS的光谱分量以形成噪声PS。 表示噪声PS的第二多项式用于设定第二阈值。 超过第二阈值的PS的光谱分量被识别为PS的主要光谱分量。

    FABRICATION METHOD OF ACTIVE DEVICE ARRAY SUBSTRATE
    9.
    发明申请
    FABRICATION METHOD OF ACTIVE DEVICE ARRAY SUBSTRATE 审中-公开
    主动装置阵列基板的制造方法

    公开(公告)号:US20120100652A1

    公开(公告)日:2012-04-26

    申请号:US13330699

    申请日:2011-12-20

    IPC分类号: H01L33/08 H01L21/336

    CPC分类号: H01L27/1288

    摘要: A fabrication method of an active device array substrate is disclosed. A first metal material layer, a gate insulation material layer, a channel material layer, a second metal material layer, and a first photoresist layer are formed over a substrate sequentially. The first photoresist layer is patterned with a multi-tone mask to form a first patterned photoresist layer with two thicknesses. A first and second removing processes are performed sequentially using the first patterned photoresist layer as a mask to form a gate, a gate insulation layer, a channel layer, and a source/drain. The first patterned photoresist layer is removed. A passivation layer and a second patterned photoresist layer are formed over the substrate. A third removing process is performed to form a plurality of contact holes. A pixel electrode material layer is formed over the substrate. The second patterned photoresist layer is lifted off to form a pixel electrode.

    摘要翻译: 公开了一种有源器件阵列衬底的制造方法。 顺序地在衬底上形成第一金属材料层,栅绝缘材料层,沟道材料层,第二金属材料层和第一光致抗蚀剂层。 第一光致抗蚀剂层用多色调掩模构图以形成具有两个厚度的第一图案化光致抗蚀剂层。 使用第一图案化的光致抗蚀剂层作为掩模来顺序地执行第一和第二去除处理以形成栅极,栅极绝缘层,沟道层和源极/漏极。 去除第一图案化光致抗蚀剂层。 在衬底上形成钝化层和第二图案化光致抗蚀剂层。 执行第三移除处理以形成多个接触孔。 像素电极材料层形成在衬底上。 第二图案化光致抗蚀剂层被提起以形成像素电极。

    Method and apparatus for creating a generalized response model for a sheet forming machine
    10.
    发明授权
    Method and apparatus for creating a generalized response model for a sheet forming machine 有权
    用于创建片材成形机的广义响应模型的方法和装置

    公开(公告)号:US08155932B2

    公开(公告)日:2012-04-10

    申请号:US12350489

    申请日:2009-01-08

    IPC分类号: G06F17/10

    CPC分类号: D21G9/0027

    摘要: A method and apparatus for creating a generalized response model for a sheet forming machine are provided. Sheet property profiles are measured while the setpoint of an actuator is changed. A response (or change) profile of the sheet property resulting from a setpoint change is calculated. A finite set of critical points are selected from the property response profile. Using the selected critical points, the property response profile is classified in one of a finite number of response types. Under each of the response types, the property response profile is fitted with a plurality of continuous functions associated therewith. These continuous functions are combined to form the response model that minimizes the deviation between the property response and the fitted combination of continuous functions.

    摘要翻译: 提供了一种用于创建片材成形机的广义响应模型的方法和装置。 在执行器的设定值更改时测量纸张属性轮廓。 计算由设定值变化产生的纸张属性的响应(或更改)曲线。 从属性响应简档中选择一组有限的关键点。 使用所选择的关键点,属性响应简档被分类为有限数量的响应类型之一。 在每个响应类型下,属性响应简档配有与其相关联的多个连续功能。 这些连续函数被组合以形成最小化属性响应和连续函数的拟合组合之间的偏差的响应模型。