公开(公告)号：US20070141838A1

公开(公告)日：2007-06-21

申请号：US11441095

申请日：2006-05-26

申请人： Ming-Nan Hsiao ,  Shin-Chuan Chiang ,  Bor-Chuan Chuang

发明人： Ming-Nan Hsiao ,  Shin-Chuan Chiang ,  Bor-Chuan Chuang

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  C23C18/1608 ,  C23C18/1879 ,  C23C18/42 ,  H01L21/76838 ,  H01L27/1292 ,  H05K3/185

摘要： A direct patterning method for manufacturing a metal layer of a semiconductor device is provided. The claimed method reduces the materials and hours required by prior methods such as the thin film depositing method for a substrate, and the photolithographic method for manufacturing a transistor. The preferred embodiment of the present invention comprises a step of defining the pattern of the seeder material and a step of selectively thin film deposition. The direct patterned technology for the seeder and a chemical bath deposition (CBD) are utilized to provide the thin film growing method with non-vacuum and selective deposition. The object of the invention is applied to produce the wire or electrode, within the semiconductor device, or to deposit and manufacture the thin film in the large-area transistor array or a reflective layer.

摘要翻译： 提供了用于制造半导体器件的金属层的直接图案化方法。 所要求保护的方法减少了诸如用于衬底的薄膜沉积方法等现有方法所需的材料和时间，以及用于制造晶体管的光刻方法。 本发明的优选实施例包括限定播种机材料的图案的步骤和选择性薄膜沉积的步骤。 用于播种机的直接图案化技术和化学浴沉积（CBD）用于提供具有非真空和选择性沉积的薄膜生长方法。 本发明的目的是用于在半导体器件内生产线或电极，或者在大面积晶体管阵列或反射层中沉积和制造薄膜。

公开(公告)号：US20070238247A1

公开(公告)日：2007-10-11

申请号：US11446300

申请日：2006-06-05

申请人： Chun-Yao Ou ,  Hua-Chi Cheng ,  Ming-Nan Hsiao ,  Bor-Chuan Chuang ,  Chao-Jen Wang

发明人： Chun-Yao Ou ,  Hua-Chi Cheng ,  Ming-Nan Hsiao ,  Bor-Chuan Chuang ,  Chao-Jen Wang

IPC分类号： H01L21/336

CPC分类号： H01L29/66765 ,  H01L21/02568 ,  H01L21/02628 ,  H01L27/1292

摘要： A method of fabricating an active layer thin film by a metal-chalcogenide precursor solution is provided, including the steps of: synthesizing a metal-chalcogenide precursor containing benzyl or benzyl derivative; dissolving the precursor in a solvent to produce a precursor solution, wherein a chalcogen element or compound can be added to the precursor solution to adjust the molar ratio of metal ion to chalcogen; and then applying the precursor solution onto a substrate in a specific coating manner, to form a film of the metal-chalcogenide after a curing process. Thereby, the existing method wherein an amorphous silicon active layer film is fabricated by plasma enhanced chemical vapor deposition (PECVD) is replaced

摘要翻译： 提供了一种通过金属 - 硫族化物前体溶液制备活性层薄膜的方法，包括以下步骤：合成含有苄基或苄基衍生物的金属 - 硫族化物前体; 将前体溶解在溶剂中以产生前体溶液，其中可以向前体溶液中加入硫属元素或化合物以调节金属离子与硫属元素的摩尔比; 然后以特定的涂布方式将前体溶液涂布到基材上，以在固化过程之后形成金属硫属元素化膜。 因此，替换了通过等离子体增强化学气相沉积（PECVD）制造非晶硅有源层膜的现有方法

公开(公告)号：US07390715B2

公开(公告)日：2008-06-24

申请号：US11446300

申请日：2006-06-05

申请人： Chun-Yao Ou ,  Hua-Chi Cheng ,  Ming-Nan Hsiao ,  Bor-Chuan Chuang ,  Chao-Jen Wang

发明人： Chun-Yao Ou ,  Hua-Chi Cheng ,  Ming-Nan Hsiao ,  Bor-Chuan Chuang ,  Chao-Jen Wang

IPC分类号： H01L21/336

CPC分类号： H01L29/66765 ,  H01L21/02568 ,  H01L21/02628 ,  H01L27/1292

摘要： A method of fabricating an active layer thin film by a metal-chalcogenide precursor solution is provided, including the steps of: synthesizing a metal-chalcogenide precursor containing benzyl or benzyl derivative; dissolving the precursor in a solvent to produce a precursor solution, wherein a chalcogen element or compound can be added to the precursor solution to adjust the molar ratio of metal ion to chalcogen; and then applying the precursor solution onto a substrate in a specific coating manner, to form a film of the metal-chalcogenide after a curing process. Thereby, the existing method wherein an amorphous silicon active layer film is fabricated by plasma enhanced chemical vapor deposition (PECVD) is replaced.

摘要翻译： 提供了一种通过金属 - 硫族化物前体溶液制备活性层薄膜的方法，包括以下步骤：合成含有苄基或苄基衍生物的金属 - 硫族化物前体; 将前体溶解在溶剂中以产生前体溶液，其中可以向前体溶液中加入硫属元素或化合物以调节金属离子与硫属元素的摩尔比; 然后以特定的涂布方式将前体溶液涂布到基材上，以在固化过程之后形成金属硫属元素化膜。 因此，替换了通过等离子体增强化学气相沉积（PECVD）制造非晶硅有源层膜的现有方法。

公开(公告)号：US20060286725A1

公开(公告)日：2006-12-21

申请号：US11154226

申请日：2005-06-16

申请人： Hua-Chi Cheng ,  Cheng-Chung Lee ,  Ming-Nan Hsiao

发明人： Hua-Chi Cheng ,  Cheng-Chung Lee ,  Ming-Nan Hsiao

IPC分类号： H01L21/84

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/66969

摘要： A method for manufacturing TFTs is provided. It can be applied to both inverted staggered and co-planar TFT structures. The manufacturing method for the staggered TFT includes the formation of a gate electrode, a gate insulator, an active channel layer, a drain electrode, and a source electrode on a substrate. It emphasizes the use of metal oxides or II-VI compounds semiconductors and low-temperature CBD process to form the active channel layer. In a CBD process, the active channel layers are selectively deposited on the substrates immersed in the solution through controlling solution temperature and PH value. The invention offers the advantages of low deposition temperature, selective deposition, no practical limit of panel size, and low fabrication cost. Its low deposition temperature allows the use of flexible substrates, such as plastic substrates.

摘要翻译： 提供了制造TFT的方法。 它可以应用于反向交错和共平面的TFT结构。 交错TFT的制造方法包括在基板上形成栅极，栅极绝缘体，有源沟道层，漏极和源电极。 它强调使用金属氧化物或II-VI化合物半导体和低温CBD工艺形成有源沟道层。 在CBD工艺中，通过控制溶液温度和PH值，将有源沟道层选择性地沉积在浸在溶液中的衬底上。 本发明提供了低沉积温度，选择性沉积，面板尺寸的实际限制和低制造成本的优点。 其低沉积温度允许使用柔性基底，例如塑料基底。

公开(公告)号：US07381586B2

公开(公告)日：2008-06-03

申请号：US11154226

申请日：2005-06-16

申请人： Hua-Chi Cheng ,  Cheng-Chung Lee ,  Ming-Nan Hsiao

发明人： Hua-Chi Cheng ,  Cheng-Chung Lee ,  Ming-Nan Hsiao

IPC分类号： H01L21/368

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/66969

摘要： A method for manufacturing TFTs is provided. It can be applied to both inverted staggered and co-planar TFT structures. The manufacturing method for the staggered TFT includes the formation of a gate electrode, a gate insulator, an active channel layer, a drain electrode, and a source electrode on a substrate. It emphasizes the use of metal oxides or II-VI compound semiconductors and low-temperature CBD process to form the active channel layer. In a CBD process, the active channel layers are selectively deposited on the substrates immersed in the solution through controlling solution temperature and PH value. The invention offers the advantages of low deposition temperature, selective deposition, no practical limit of panel size, and low fabrication cost. Its low deposition temperature allows the use of flexible substrates, such as plastic substrates.

摘要翻译： 提供了制造TFT的方法。 它可以应用于反向交错和共平面的TFT结构。 交错TFT的制造方法包括在基板上形成栅极，栅极绝缘体，有源沟道层，漏极和源电极。 它强调使用金属氧化物或II-VI化合物半导体和低温CBD工艺来形成有源沟道层。 在CBD工艺中，通过控制溶液温度和PH值，将有源沟道层选择性地沉积在浸在溶液中的衬底上。 本发明提供了低沉积温度，选择性沉积，面板尺寸的实际限制和低制造成本的优点。 其低沉积温度允许使用柔性基底，例如塑料基底。