公开(公告)号：US08344416B2

公开(公告)日：2013-01-01

申请号：US12777672

申请日：2010-05-11

申请人： Ming-Song Sheu ,  Jian-Hsing Lee ,  Yu-Chang Jong ,  Chun-Chien Tsai

发明人： Ming-Song Sheu ,  Jian-Hsing Lee ,  Yu-Chang Jong ,  Chun-Chien Tsai

IPC分类号： H01L29/02

CPC分类号： H01L27/0251 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/66681 ,  H01L29/7817 ,  H01L29/7835

摘要： An integrated circuit includes at least one transistor over a substrate. A first guard ring is disposed around the at least one transistor. The first guard ring has a first type dopant. A second guard ring is disposed around the first guard ring. The second guard ring has a second type dopant. A first doped region is disposed adjacent to the first guard ring. The first doped region has the second type dopant. A second doped region is disposed adjacent to the second guard ring. The second doped region has the first type dopant. The first guard ring, the second guard ring, the first doped region, and the second doped region are capable of being operable as a first silicon controlled rectifier (SCR) to substantially release an electrostatic discharge (ESD).

摘要翻译： 集成电路在衬底上包括至少一个晶体管。 第一保护环布置在至少一个晶体管周围。 第一保护环具有第一类型掺杂剂。 第二保护环设置在第一保护环周围。 第二保护环具有第二类型掺杂剂。 第一掺杂区域邻近第一保护环设置。 第一掺杂区具有第二类掺杂剂。 第二掺杂区域邻近第二保护环设置。 第二掺杂区具有第一类掺杂剂。 第一保护环，第二保护环，第一掺杂区和第二掺杂区能够用作第一可控硅整流器（SCR），以基本上释放静电放电（ESD）。

公开(公告)号：US20080171409A1

公开(公告)日：2008-07-17

申请号：US11935626

申请日：2007-11-06

申请人： Huang-Chung Cheng ,  Chun-Chien Tsai ,  Hsu-Hsin Chen

发明人： Huang-Chung Cheng ,  Chun-Chien Tsai ,  Hsu-Hsin Chen

IPC分类号： H01L21/336

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02686 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/66765

摘要： The present invention discloses a method for fabricating a bottom-gate low-temperature polysilicon thin film transistor, wherein the bottom gate structure is used to form an amorphous silicon layer with varied thicknesses; the amorphous silicon layer in the step region on the border of the bottom gate structure is partially melted by an appropriate amount of laser energy; the partially-melted amorphous silicon layer in the step region functions as crystal seeds and makes crystal grains grow toward the channel region where the amorphous silicon layer is fully melted, and the crystal grains are thus controlled to grow along the lateral direction to form a lateral-grain growth low-temperature polysilicon thin film. The lateral grain growth can reduce the number of the grain boundaries carriers have to pass through. Thus, the present invention can promote the carrier mobility in the active region and the electric performance. Further, the present invention can achieve a superior element motive force and a steeper subthreshold swing.

摘要翻译： 本发明公开了一种制造底栅低温多晶硅薄膜晶体管的方法，其中底栅结构用于形成具有不同厚度的非晶硅层; 在底栅结构的边界上的台阶区域中的非晶硅层部分地被适当量的激光能量熔化; 台阶区域中部分熔融的非晶硅层起晶晶的作用，使晶粒向非晶硅层完全熔融的沟道区域生长，从而控制晶粒沿横向生长，形成侧面 - 生长低温多晶硅薄膜。 横向晶粒生长可以减少载流子必须通过的晶界数。 因此，本发明可以促进有源区中的载流子迁移率和电性能。 此外，本发明可以实现优异的元件动力和更陡峭的亚阈值摆动。