摘要:
Gap filling between features which are closely spaced is significantly improved by initially depositing a thin conformal layer followed by depositing a layer of gap filling dielectric material. Embodiments include depositing a thin conformal layer of silicon nitride or silicon oxide, as by atomic layer deposition or pulsed layer deposition, into the gap between adjacent gate electrode structures such that it flows into undercut regions of dielectric spacers on side surfaces of the gate electrode structures, and then depositing a layer of BPSG or P-HDP oxide on the thin conformal layer into the gap. Embodiments further include depositing the layers at a temperature less than 430° C., as by depositing a P-HDP oxide after depositing the conformal liner when the gate electrode structures include a layer of nickel silicide.
摘要:
Cu interconnects are formed with composite capping layers for reduced electromigration, improved adhesion between Cu and the capping layer, and reduced charge loss in associated non-volatile transistors. Embodiments include depositing a first relatively thin silicon nitride layer having a relatively high concentration of Si—H bonds on the upper surface of a layer of Cu for improved adhesion and reduced electromigration, and depositing a second relatively thick silicon nitride layer having a relatively low concentration of Si—H bonds on the first silicon nitride layer for reduced charge loss.
摘要:
During semiconductor fabrication homogeneous gap-filling is achieved by depositing a thin dielectric layer into the gap, post deposition curing, and then repeating deposition and post deposition curing until gap-filling is completed. Embodiments include depositing a layer of low deposition temperature gap-fill dielectric into a high aspect ratio opening, such as a shallow trench or a gap between closely spaced apart gate electrode structures, as at a thickness of about 10 Å to about 500 Å, curing after deposition, as by UV radiation or by heating at a temperature of about 400° C. to about 1000° C., depositing another layer of low deposition temperature gap-filled dielectric, and curing after deposition. Embodiments include separately depositing and separately curing multiple layers.
摘要:
During semiconductor fabrication homogeneous gap-filling is achieved by depositing a thin dielectric layer into the gap, post deposition curing, and then repeating deposition and post deposition curing until gap-filling is completed. Embodiments include depositing a layer of low deposition temperature gap-fill dielectric into a high aspect ratio opening, such as a shallow trench or a gap between closely spaced apart gate electrode structures, as at a thickness of about 10 Å to about 500 Å, curing after deposition, as by UV radiation or by heating at a temperature of about 400° C. to about 1000° C., depositing another layer of low deposition temperature gap-filled dielectric, and curing after deposition. Embodiments include separately depositing and separately curing multiple layers.
摘要:
Disclosed are methods and systems for improving cell-to-cell repeatability of electrical performance in memory cells. The methods involve forming an electrically non-conducting material having ordered porosity over a passive layer. The ordered porosity can facilitate formation of conductive channels through which charge carriers can migrate across the otherwise non-conductive layer to facilitate changing a state of a memory cell. A barrier layer can optionally be formed over the non-conductive layer, and can have ordered porosity oriented in a manner substantially perpendicular to the conductive channels such that charge carries migrating across the non-conductive layer cannot permeate the barrier layer. The methods provide for the manufacture of microelectronic devices with cost-effective and electrically reliable memory cells.
摘要:
An exemplary embodiment is related to a method of using an adhesion precursor in an integrated circuit fabrication process. The method includes providing a gas of material over a dielectric material and providing a copper layer over an adhesion precursor layer. The adhesion precursor layer is formed by the gas, and the dielectric material includes an aperture.
摘要:
A device providing efficient transformation between an initial optical mode and a second optical mode includes first, second and third elements fabricated on a common substrate. The first element includes first and second active sub-layers supporting initial and final optical modes with efficient mode transformation therebetween. The second element includes a passive waveguide structure supporting a second optical mode. The third element, at least partly butt-coupled to the first element, includes an intermediate waveguide structure supporting an intermediate optical mode. If the final optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in the second or third elements facilitates efficient transformation between the intermediate optical mode and the second optical mode. Precise alignment of sub-elements formed in one of the elements, relative to sub-elements formed in another one of the elements, is defined using lithographic alignment marks.
摘要:
A device comprises first, second and third elements fabricated on a common substrate. The first element comprises an active waveguide structure comprising: one portion, of effective cross-sectional area A1, supporting a first optical mode; and a second portion, butt-coupled to the first portion, of effective cross-sectional area A2>A1. The second element comprises a passive waveguide structure supporting a second optical mode. The third element, at least partly butt-coupled to the second portion, comprises an intermediate waveguide structure supporting intermediate optical modes. If the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the first optical mode and one intermediate optical mode. No adiabatic transformation occurs between any intermediate optical mode and the first optical mode. Mutual alignments of the elements are defined using lithographic marks.