公开(公告)号：US06485891B1

公开(公告)日：2002-11-26

申请号：US09542072

申请日：2000-04-03

申请人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

发明人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

IPC分类号： G03F720

CPC分类号： G03F7/705 ,  G03F7/2002 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70308 ,  G03F7/70591 ,  Y10S430/146

摘要： A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, illuminating a pattern on a mask with the excimer laser emitted from the light source and passed through a filter, exposing a resist on a substrate of the semiconductor with the excimer laser passed through the mask, and forming a pattern on the substrate in accordance with a portion of the resist exposed with the excimer laser.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：从光源发射准分子激光器，用从光源发射的准分子激光器照射掩模上的图案，并通过过滤器，将抗蚀剂暴露在基板上 半导体与准分子激光器通过掩模，并且根据暴露于准分子激光器的抗蚀剂的一部分在衬底上形成图案。

公开(公告)号：US06335146B1

公开(公告)日：2002-01-01

申请号：US09542071

申请日：2000-04-03

申请人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

发明人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

IPC分类号： G03F700

CPC分类号： G03F7/705 ,  G03F7/2002 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70308 ,  G03F7/70591 ,  Y10S430/146

摘要： A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, forming the excimer laser in a particular shape, illuminating a pattern on a mask for a phase shifter method with the particular shaped excimer laser, and exposing a resist on a wafer with the excimer laser which passed through the mask. The resist on the wafer is developed and the wafer is etched to form a pattern.

摘要翻译： 半导体器件的制造方法包括以下步骤：从光源发射准分子激光，形成特定形状的准分子激光器，照射具有特定形状的准分子激光器的移相器方法的掩模上的图案，以及曝光 具有通过掩模的准分子激光器的晶片上的抗蚀剂。 显影晶片上的抗蚀剂，蚀刻晶片以形成图案。

公开(公告)号：US20050196705A1

公开(公告)日：2005-09-08

申请号：US11117493

申请日：2005-04-29

申请人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

发明人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

IPC分类号： G03F1/84 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03C5/00

CPC分类号： G03F7/705 ,  G03F7/2002 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70308 ,  G03F7/70591 ,  Y10S430/146

摘要： A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing the light pattern is formed by illuminating a mask with excimer laser light having an annular shape.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：通过在半导体器件的衬底上投射光图案来曝光涂覆在半导体器件的衬底上的抗蚀剂的步骤，使由光图案曝光的抗蚀剂显影以形成具有 并且蚀刻其上形成有抗蚀剂的晶片图案的基板。 在曝光的步骤中，通过用具有环形形状的准分子激光照射掩模形成光图案。

公开(公告)号：US20050191583A1

公开(公告)日：2005-09-01

申请号：US11117492

申请日：2005-04-29

申请人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

发明人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

IPC分类号： G03F1/84 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03F7/00

CPC分类号： G03F7/705 ,  G03F7/2002 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70308 ,  G03F7/70591 ,  Y10S430/146

摘要： A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device through an object lens, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing, the light pattern projected on the substrate is formed by excimer laser light which is emitted from an annular shaped light source and which is passed through a mask having a phase shifter.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：通过物镜将半导体器件的基板上的光图案投射到半导体器件的基板上，使其抗蚀剂曝光，使由光图形曝光的抗蚀剂显影形成 具有抗蚀剂的晶片图案，并且蚀刻其上形成有抗蚀剂的晶片图案的基板。 在曝光的步骤中，投射在基板上的光图案由从环形光源发射并通过具有移相器的掩模的准分子激光形成。

公开(公告)号：US5329333A

公开(公告)日：1994-07-12

申请号：US846158

申请日：1992-03-05

申请人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

发明人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

IPC分类号： G03F1/84 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03B27/42 ,  G03B27/72

CPC分类号： G03F7/705 ,  G03F7/2002 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70308 ,  G03F7/70591 ,  Y10S430/146

摘要： An exposure apparatus and method wherein a mask is illuminated with light and light one of transmitted through and reflected from the illuminated mask is imaged onto a substrate. At least during imaging, transmission of light one of transmitted and reflected from the illuminated mask is partially inhibited. More particularly, a spatial filter is utilized for inhibiting at least a portion of O-order diffraction light.

摘要翻译： 一种曝光装置和方法，其中用光和光照射掩模，将透射通过和从照射的掩模反射的透镜装置成像到基板上。 至少在成像期间，部分地抑制从被照射的掩模发射和反射的光的透射。 更具体地，利用空间滤波器来抑制O级衍射光的至少一部分。

公开(公告)号：US07604925B2

公开(公告)日：2009-10-20

申请号：US11117493

申请日：2005-04-29

申请人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

发明人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

IPC分类号： H01L21/00

CPC分类号： G03F7/705 ,  G03F7/2002 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70308 ,  G03F7/70591 ,  Y10S430/146

摘要： A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing the light pattern is formed by illuminating a mask with excimer laser light having an annular shape.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：通过在半导体器件的衬底上投射光图案来曝光涂覆在半导体器件的衬底上的抗蚀剂的步骤，使由光图案曝光的抗蚀剂显影以形成具有 并且蚀刻其上形成有抗蚀剂的晶片图案的基板。 在曝光的步骤中，通过用具有环形形状的准分子激光照射掩模形成光图案。

公开(公告)号：US07012671B2

公开(公告)日：2006-03-14

申请号：US10282081

申请日：2002-10-29

申请人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

发明人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

IPC分类号： G03B27/42 ,  G03B27/54

CPC分类号： G03F7/705 ,  G03F7/2002 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70308 ,  G03F7/70591 ,  Y10S430/146

摘要： An apparatus and method for projecting a pattern includes a light source for emitting a laser; an illuminating unit which illuminates a mask on which a pattern is formed with the laser emitted from the light source and formed in a particular shape; a holder which holds the mask; an optical lens unit which projects the pattern formed on the mask onto a surface of a substrate by the laser illuminated on the mask; and a table which mounts the substrate and moves in at least one direction.

公开(公告)号：US6016187A

公开(公告)日：2000-01-18

申请号：US3141

申请日：1998-01-06

申请人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

发明人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

IPC分类号： G03F1/84 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03B27/42

CPC分类号： G03F7/705 ,  G03F7/2002 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70308 ,  G03F7/70591 ,  Y10S430/146

摘要： An exposure apparatus and method wherein a mask is illuminated with light and light one of transmitted through and reflected from the illuminated mask is imaged onto a substrate. At least during imaging transmission of light one of transmitted and reflected from the illuminated mask is partially inhibited. More particularly, a spatial filter is utilized for inhibiting at least a portion of O-order diffraction light.

摘要翻译： 一种曝光装置和方法，其中用光和光照射掩模，将透射通过和从照射的掩模反射的透镜装置成像到基板上。 至少在光的成像传输期间，被照射的掩模的透射和反射之一被部分抑制。 更具体地，利用空间滤波器来抑制O级衍射光的至少一部分。

公开(公告)号：US5767949A

公开(公告)日：1998-06-16

申请号：US727762

申请日：1996-10-08

申请人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

发明人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

IPC分类号： G03F1/84 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03B27/42 ,  G03B27/32 ,  G03B27/72

CPC分类号： G03F7/705 ,  G03F7/2002 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70308 ,  G03F7/70591 ,  Y10S430/146

摘要： An exposure apparatus and method wherein a mask is illuminated with light and light one of transmitted through and reflected from the illuminated mask is imaged onto a substrate. At least during imaging transmission of light one of transmitted and reflected from the illuminated mask is partially inhibited. More particularly, a spatial filter is utilized for inhibiting at least a portion of O-order diffraction light.

公开(公告)号：US07598020B2

公开(公告)日：2009-10-06

申请号：US11117492

申请日：2005-04-29

申请人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

发明人： Minori Noguchi ,  Yukio Kenbo ,  Yoshitada Oshida ,  Masataka Shiba ,  Yasuhiro Yoshitaka ,  Makoto Murayama

IPC分类号： H01L21/00

CPC分类号： G03F7/705 ,  G03F7/2002 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70308 ,  G03F7/70591 ,  Y10S430/146

摘要： A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device through an object lens, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing, the light pattern projected on the substrate is formed by excimer laser light which is emitted from an annular shaped light source and which is passed through a mask having a phase shifter.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：通过物镜将半导体器件的基板上的光图案投射到半导体器件的基板上，使其抗蚀剂曝光，使由光图形曝光的抗蚀剂显影形成 具有抗蚀剂的晶片图案，并且蚀刻其上形成有抗蚀剂的晶片图案的基板。 在曝光的步骤中，投射在基板上的光图案由从环形光源发射并通过具有移相器的掩模的准分子激光形成。