摘要:
The invention according to the present application provides a high strength solidification body by solidifying a starting metallic powder of iron and the like by means of plastic working using hydrostatic pressing, which is, for instance, a high strength high toughness steel material and the like having a superfine texture comprising a crystalline texture consisting of grains 5 &mgr;m or less in average diameter, or preferably, 3 &mgr;m or less in average diameter. Furthermore, the present invention provides a steel material included in the high strength solidification body, which contains oxide grain 0.2 &mgr;m or less in diameter at a volume ratio of from 0.5 to 60%.
摘要:
Second ground plane (18), substantially rectangular in shape, is connected to first ground plane (17) mounted with a data processing circuit, and radio communication circuit (12) makes radio communications at communication wavelength λ. A portion of second ground plane (18) from ground connecting means (14) to ground connecting means (33) along continuous edges of second ground plane (18) acts as an antenna. However, since the longest distance a between a plurality of ground connecting means (14, 33) along the continuous edges of second ground plane (18) satisfies “a
摘要:
A surge absorption device includes fundamentally a first semiconductor region, a second semiconductor region forming a pn junction between itself and the first region, a third region determining the effective thickness of the second region, and a fourth region provided in contact with the first region and forming an injection junction for causing first minority carriers of a kind the same as that of minority carriers in the first region to be injected into the first region. When a depletion layer formed by application of reverse bias across the pn junction reaches the third region, a punch-through region is formed in the second region. In this state, when minority carriers are injected from the fourth region into the first region, the minority carriers are absorbed by the second region to constitute the device current.
摘要:
A pair of main electrodes are hermetically mounted, by fusion of a low melting point metal, onto both end openings of an insulative cylindrical member, respectively. Main electric discharge surfaces of the electrodes oppose each other in said cylindrical member with a gap interposed therebetween. A recessed portion is provided in the main electric discharge surface of one of the pair of main electrodes. A pair of trigger electrodes are conductively connected to the pair of main electrodes, and oppose each other in the recessed portion to thereby form a trigger electric discharge gap therebetween. The pair of main electrodes are formed of electrically conductive material having a thermal coefficient of expansion greater than that of the insulative cylindrical member. The dimension of the trigger electric discharge gap is given as the dimension of the gap between the trigger electrodes which is produced due to the difference in the thermal coefficient of expansion between the pair of main electrodes and an insulative cylindrical member when the trigger electrodes are caused to contact each other by zeroing the gap therebetween and, in this state, the pair of main electrodes are hermetically mounted, by fusion of the low melting point metal, onto both end openings, respectively, of the insulative cylindrical member and, thereafter, the resultant unit is cooled down to room temperature.
摘要:
An overvoltage protecting element of the invention has a pair of main electrodes, the discharging surfaces of which oppose each other with a gap therebetween in a cylindrical body of an insulator, and a conductive member which is formed on the inner wall surface of the cylindrical body to oppose the main electrodes with a gap therebetween, and a plurality of extended parts of which extending in the circumferential direction of the cylindrical body being connected in the axial direction of the cylindrical body. The main electrodes and the conductive member are electrically connected to each other by capacitive coupling.