公开(公告)号：US10658921B2

公开(公告)日：2020-05-19

申请号：US16087752

申请日：2017-01-16

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Takao Mitsui ,  Matahiko Ikeda ,  Masakazu Tani

IPC分类号： H01L23/34 ,  H02M1/32 ,  H02P29/68 ,  H03K17/0812 ,  H03K17/08

摘要： A plurality of semiconductor elements have sources which are commonly connected, and drains which are commonly connected. A voltage measurement unit measures an ON voltage between the source of a first semiconductor element of the plurality of semiconductor elements and the drain of the first semiconductor element. A determination unit receives information indicating a magnitude of an ON current between the source of the first semiconductor element and the drain of the first semiconductor element, and a measured value of the ON voltage in the voltage measurement unit, and determines whether the plurality of semiconductor elements are in a normal state or in an overheated state based on the measured value of the ON voltage and the received information indicating the magnitude of the ON current.

公开(公告)号：US10553559B2

公开(公告)日：2020-02-04

申请号：US15741841

申请日：2016-09-29

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Noriyuki Besshi ,  Ryuichi Ishii ,  Masaru Fuku ,  Takayuki Yamada ,  Takao Mitsui

IPC分类号： H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L23/373 ,  H01L23/492 ,  H01L23/00 ,  H01L23/053 ,  H01L23/498

摘要： Provided is a power semiconductor device which is able to have improved connection reliability between a wiring line and an electrode of a power semiconductor element in comparison to conventional power semiconductor devices. This power semiconductor device is provided with: a semiconductor element; an insulating substrate having an electrode layer to which the semiconductor element is bonded; an external wiring line which is solder bonded to an upper surface electrode of the semiconductor element and has an end portion for external connection, said end portion being bent toward the upper surface; and a frame member which is affixed to the electrode layer of the insulating substrate. The frame member has a fitting portion that is fitted with the end portion for external connection; and the external wiring line has at least two projected portions that protrude toward the semiconductor element.

公开(公告)号：US10084388B2

公开(公告)日：2018-09-25

申请号：US15325949

申请日：2015-06-12

申请人： Mitsubishi Electric Corporation

发明人： Keita Takahashi ,  Kazuki Sakata ,  Yoshiyuki Deguchi ,  Takuto Yano ,  Mamoru Takikita ,  Kazutoshi Awane ,  Koji Nakajima ,  Takao Mitsui ,  Kosuke Nakano ,  Masayoshi Tamura ,  Masashi Sakai

IPC分类号： H02M7/00 ,  H02M7/537 ,  H01L23/552 ,  H05K7/20 ,  H01L23/367 ,  H03H1/00 ,  H01L25/18

CPC分类号： H02M7/003 ,  H01L23/36 ,  H01L23/3675 ,  H01L23/552 ,  H01L25/07 ,  H01L25/18 ,  H01L2924/0002 ,  H02M7/48 ,  H02M7/537 ,  H03H1/00 ,  H03H2001/0085 ,  H05K7/209 ,  H01L2924/00

摘要： A power converter includes: a base conductor, an electrically heating member which is provided on the base conductor, a noise reduction capacitor of flat plate-shape in which via an insulator, a plurality of first electrodes and second electrodes are alternately layered, on one surface, the first electrode in an outermost layer is exposed and on another surface, the second electrode in an outermost layer is exposed, a relay conductor which is electrically connected to other members from the electrically heating member via the noise reduction capacitor, and the second electrode in an outermost layer of the noise reduction capacitor is face-joined to a face of the base conductor at a side where the electrically heating member is provided and the first electrode in an outermost layer and the relay conductor are face-joined.

公开(公告)号：US10403559B2

公开(公告)日：2019-09-03

申请号：US16078349

申请日：2016-05-26

申请人： Mitsubishi Electric Corporation

发明人： Masaru Fuku ,  Noriyuki Besshi ,  Ryuichi Ishii ,  Takayuki Yamada ,  Takao Mitsui ,  Komei Hayashi

IPC分类号： H01L23/52 ,  H01L23/373 ,  H01L23/48 ,  H01L21/3205 ,  H01L23/522 ,  H01L21/52 ,  H01L25/07 ,  H01L21/768 ,  H01L25/18 ,  H01L23/043 ,  H01L23/367 ,  H01L23/00

摘要： In a power semiconductor device, the thickness dimension of a protective film of a semiconductor element is made smaller than that of an upper electrode, so a protective film is not pressed by being pressurized from upward when bonded by a metal sintered body, and the force of tearing off the upper electrode riding on an inclined surface of the protective film does not act, so that no crack of the upper electrode occurs, thus maintaining the soundness of the semiconductor element. Also, a lead bonded by a solder to the upper electrode of the semiconductor element is made of a copper-Invar clad material, the linear expansion coefficient of which is optimized, and thereby it is possible to realize a durability superior to that of a heretofore known wire-bonded aluminum wiring.