-
公开(公告)号：US10937725B2
公开(公告)日：2021-03-02
申请号：US16469233
申请日：2017-12-26
发明人： Yuya Muramatsu , Noriyuki Besshi , Ryuichi Ishii
IPC分类号： H01L23/15 , H01L21/60 , H01L23/498
摘要： A semiconductor device comprises: a ceramic substrate having conductor layers on both surfaces thereof; a semiconductor element joined to the upper surface conductor layer of the ceramic substrate; a frame member arranged on the upper surface conductor layer so as to surround a side surface of the semiconductor element; and an electrode, which is joined to an upper portion of the semiconductor element via a second fixing layer, and has fitting portions on a side surface of the electrode. On an inner wall of the frame member, fitting portions to be fitted to the fitting portions of the electrode and four positioning portions extending from the inner wall of the frame member to the side surfaces of the electrode are formed.
-
公开(公告)号：US10553559B2
公开(公告)日：2020-02-04
申请号：US15741841
申请日：2016-09-29
发明人： Noriyuki Besshi , Ryuichi Ishii , Masaru Fuku , Takayuki Yamada , Takao Mitsui
IPC分类号： H01L25/065 , H01L25/07 , H01L25/18 , H01L23/373 , H01L23/492 , H01L23/00 , H01L23/053 , H01L23/498
摘要： Provided is a power semiconductor device which is able to have improved connection reliability between a wiring line and an electrode of a power semiconductor element in comparison to conventional power semiconductor devices. This power semiconductor device is provided with: a semiconductor element; an insulating substrate having an electrode layer to which the semiconductor element is bonded; an external wiring line which is solder bonded to an upper surface electrode of the semiconductor element and has an end portion for external connection, said end portion being bent toward the upper surface; and a frame member which is affixed to the electrode layer of the insulating substrate. The frame member has a fitting portion that is fitted with the end portion for external connection; and the external wiring line has at least two projected portions that protrude toward the semiconductor element.
-
公开(公告)号：US10186501B2
公开(公告)日：2019-01-22
申请号：US14915662
申请日：2013-12-24
发明人： Ryuichi Ishii
IPC分类号： H01L25/18 , H01L23/49 , H01L23/473 , H01L25/07 , H02M7/00 , H01L23/31 , H01L23/367 , H01L23/498 , H01L23/373 , H01L23/053
摘要： An electric power converter includes a switching device that performs electric-power conversion through switching, an insulated substrate having a first side and a second side that are opposite to each other, a first circuit with which the switching device is electrically connected and that is bonded to the first side of the insulated substrate, a second circuit that is formed in a shape the same as that of the first circuit and is bonded to the second side of the insulated substrate, and a base to which the second circuit is bonded through the intermediary of a bonding layer; each of corner portions in the respective planar shapes of the first circuit and the second circuit has a stress relaxation portion that is formed in such a way as to have a smaller thickness than the other portion.
-
公开(公告)号：US09018756B2
公开(公告)日：2015-04-28
申请号：US14039509
申请日：2013-09-27
发明人： Ryuichi Ishii , Noriyuki Besshi
IPC分类号： H01L23/34 , H01L23/373
CPC分类号： H01L23/3736 , C04B37/026 , C04B2237/12 , C04B2237/366 , C04B2237/368 , C04B2237/402 , H01L23/367 , H01L23/3735 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： Stress relief layers are each provided on each circuit on an insulating substrate in a semiconductor module; a metal base coming into contact with the semiconductor module is divided into a thinned and low stiffened first metal base and a thickened and high stiffened second metal base; and the semiconductor module is bonded to the first metal base and then the first and the second metal bases are bonded to be integrated.
摘要翻译： 应力消除层各自设置在半导体模块中的绝缘基板上的每个电路上; 与半导体模块接触的金属基底被分为薄型和低硬化的第一金属基底和增厚和高硬化的第二金属基底; 并且将半导体模块接合到第一金属基底，然后将第一和第二金属基底结合成一体。
-
公开(公告)号：US11569148B2
公开(公告)日：2023-01-31
申请号：US17391138
申请日：2021-08-02
发明人： Koki Hayakashi , Ryuichi Ishii , Dai Yoshii
IPC分类号： H01L23/433 , H01L23/31 , H01L23/492 , H01L23/00 , H01L23/49
摘要： In this semiconductor device, a positioning protrusion is formed at a side surface of a sealing resin from which one end of a main electrode wire protrudes. Thus, the outer size of the sealing resin can be reduced as compared to a case where a positioning protrusion is formed at the bottom of the sealing resin. In addition, a thickness regulating protrusion is provided with a space from solder. Thus, it is possible to prevent interface separation or crack that would occur starting from a contact part between the thickness regulating protrusion and the solder, whereby the life of a joining part between a semiconductor module and a cooler can be ensured. Accordingly, a semiconductor device having enhanced heat dissipation property and reliability is obtained without increase in the outer size of the semiconductor module.
-
公开(公告)号：US20220139803A1
公开(公告)日：2022-05-05
申请号：US17391138
申请日：2021-08-02
发明人： Koki HAYAKASHI , Ryuichi Ishii , Dai Yoshii
IPC分类号： H01L23/433 , H01L23/31 , H01L23/492 , H01L23/49 , H01L23/00
摘要： In this semiconductor device, a positioning protrusion is formed at a side surface of a sealing resin from which one end of a main electrode wire protrudes. Thus, the outer size of the sealing resin can be reduced as compared to a case where a positioning protrusion is formed at the bottom of the sealing resin. In addition, a thickness regulating protrusion is provided with a space from solder. Thus, it is possible to prevent interface separation or crack that would occur starting from a contact part between the thickness regulating protrusion and the solder, whereby the life of a joining part between a semiconductor module and a cooler can be ensured. Accordingly, a semiconductor device having enhanced heat dissipation property and reliability is obtained without increase in the outer size of the semiconductor module.
-
公开(公告)号：US10727189B2
公开(公告)日：2020-07-28
申请号：US16324161
申请日：2017-08-28
发明人： Noriyuki Besshi , Ryuichi Ishii , Masaru Fuku , Yuji Fujimoto , Yusuke Hirata
IPC分类号： H01L23/64 , H01L23/48 , H01L25/11 , H01L25/18 , H01L23/00 , H01L25/07 , H01L27/07 , H01L29/10 , H01L29/739 , H01L29/861
摘要： Provided is a power semiconductor device including a signal terminal and a power semiconductor element. The power semiconductor element is arranged on a substrate. The signal terminal includes a main body portion and a joint portion, and a part of the signal terminal is held by a terminal block. The joint portion includes a distal end portion and a base portion. The distal end portion includes a pad portion that is exposed from the terminal block and connected to a signal line. The base portion includes a thin portion in which a thickness in a vertical direction is set to be smaller than that of the pad portion. The thin portion has an upper surface that is formed at a position lower than an upper surface of the pad portion and is covered with a resin material forming the terminal block.
-
公开(公告)号：US10403559B2
公开(公告)日：2019-09-03
申请号：US16078349
申请日：2016-05-26
发明人： Masaru Fuku , Noriyuki Besshi , Ryuichi Ishii , Takayuki Yamada , Takao Mitsui , Komei Hayashi
IPC分类号： H01L23/52 , H01L23/373 , H01L23/48 , H01L21/3205 , H01L23/522 , H01L21/52 , H01L25/07 , H01L21/768 , H01L25/18 , H01L23/043 , H01L23/367 , H01L23/00
摘要： In a power semiconductor device, the thickness dimension of a protective film of a semiconductor element is made smaller than that of an upper electrode, so a protective film is not pressed by being pressurized from upward when bonded by a metal sintered body, and the force of tearing off the upper electrode riding on an inclined surface of the protective film does not act, so that no crack of the upper electrode occurs, thus maintaining the soundness of the semiconductor element. Also, a lead bonded by a solder to the upper electrode of the semiconductor element is made of a copper-Invar clad material, the linear expansion coefficient of which is optimized, and thereby it is possible to realize a durability superior to that of a heretofore known wire-bonded aluminum wiring.
-
公开(公告)号：US20190206811A1
公开(公告)日：2019-07-04
申请号：US16324161
申请日：2017-08-28
发明人： Noriyuki Besshi , Ryuichi Ishii , Masaru Fuku , Yuji Fujimoto , Yusuke Hirata
IPC分类号： H01L23/64 , H01L29/10 , H01L23/00 , H01L25/07 , H01L27/07 , H01L29/739 , H01L29/861
摘要： Provided is a power semiconductor device including a signal terminal and a power semiconductor element. The power semiconductor element is arranged on a substrate. The signal terminal includes a main body portion and a joint portion, and a part of the signal terminal is held by a terminal block. The joint portion includes a distal end portion and a base portion. The distal end portion includes a pad portion that is exposed from the terminal block and connected to a signal line. The base portion includes a thin portion in which a thickness in a vertical direction is set to be smaller than that of the pad portion. The thin portion has an upper surface that is formed at a position lower than an upper surface of the pad portion and is covered with a resin material forming the terminal block.
-
公开(公告)号：US11430721B2
公开(公告)日：2022-08-30
申请号：US17158331
申请日：2021-01-26
发明人： Hiroshi Gokan , Masaru Fuku , Ryuichi Ishii
IPC分类号： H01L23/495 , H01L23/64 , H01L23/66
摘要： Two semiconductor elements and a capacitive element are located at vertices of a triangle. A first shortest path between the semiconductor elements, and a second shortest path and a third shortest path between the capacitive element and the two respective semiconductor elements, satisfy (first shortest path)≥(second shortest path) and ((first shortest path)2+(second shortest path)2)≥(third shortest path)2. A first electrically conductive metal pattern and a second electrically conductive metal pattern each have a thickness that is equal to or larger than two times a depth of a skin through which current flows owing to skin effect generated according to frequency characteristics of current paths having: a first resonance frequency obtained from capacitances and inductances between the semiconductor elements; a second resonance frequency between one of the semiconductor elements and the capacitive element; and a third resonance frequency between another one of the semiconductor elements and the capacitive element.
-
-
-
-
-
-
-
-
-
搜索结果
13 条记录 (耗时 0.016 秒)
