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公开(公告)号：US09452681B2
公开(公告)日：2016-09-27
申请号：US14782620
申请日：2013-04-12
发明人： Tomonobu Mihara , Yoshio Nagatsuka
摘要： An abnormality detector detects whether an abnormality is occurring in a power converter based on electric current that the power converter outputs and an electric current detector detects. When a value that includes the number of power converters in which an abnormality is occurring, and that indicates amount of reduction in propelling force of a vehicle satisfies a judgment criterion, a determiner determines that an increase is required in the output of the power converter in which no abnormality is occurring, among multiple power converters, to a level higher than normal output. An output controller stops the power converter if notified by the abnormality detector of an occurrence of an abnormality in the power converter. The output controller controls the output of the power converter, for which the determiner determines that the increase is required so that the output becomes higher than the normal output.
摘要翻译： 异常检测器基于电力转换器输出的电流和电流检测器检测到的电力转换器中是否发生异常。 当包括发生异常的功率转换器的数量并且表示车辆的推进力的减少量的值满足判断标准时，确定器确定在功率转换器的输出中需要增加 在多个功率转换器中没有发生异常，达到比正常输出高的水平。 输出控制器如果异常检测器通知电力变换器发生异常，则停止电力转换器。 输出控制器控制功率转换器的输出，确定器确定需要增加，使输出变得高于正常输出。
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公开(公告)号：US11955959B2
公开(公告)日：2024-04-09
申请号：US17613697
申请日：2019-05-29
发明人： Yasushi Nakayama , Yoshiko Tamada , Takayoshi Miki , Shota Morisaki , Yukio Nakashima , Kenta Uchida , Keisuke Kimura , Tomonobu Mihara
IPC分类号： H03K17/14 , H03K17/04 , H03K17/0412 , H03K17/28 , H02M1/088
CPC分类号： H03K17/14 , H03K17/04 , H03K17/0412 , H03K17/28 , H02M1/088
摘要： A parallel driving device that drives parallel-connected semiconductor elements includes a control unit and a gate driving circuit. The control unit detects a temperature difference between the semiconductor elements on the basis of detected values by temperature sensors that detect temperatures of the individual semiconductor elements. The control unit generates a control signal for changing the timing at which to turn on a first semiconductor element specified from the semiconductor elements on the basis of the temperature difference. The gate driving circuit generates a first driving signal for driving the semiconductor elements, and generates a second driving signal that is the first driving signal delayed on the basis of the control signal, and applies the second driving signal to the first semiconductor element.
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