-
公开(公告)号：US11012066B2
公开(公告)日：2021-05-18
申请号：US16975716
申请日：2019-01-11
IPC分类号： H03K17/08 , H03K17/00 , H02M1/08 , H03K17/082 , H03K17/12
摘要： A plurality of drive circuits each drive a corresponding one of a plurality of power semiconductor elements connected in parallel. Each of the drive circuits includes a control command unit, a current detector, a differentiator, and an integrator. The current detector detects a gate current that flows into a gate terminal of a corresponding one of the power semiconductor elements after the control command unit outputs a turn-on command. The differentiator performs time differentiation of the gate current detected by the current detector. The integrator performs time integration of the gate current detected by the current detector. Based on a differential value and an integral value in each of the drive circuits, the determination unit determines whether an overcurrent state occurs or not in any of the plurality of power semiconductor elements.
-
公开(公告)号：US09812934B2
公开(公告)日：2017-11-07
申请号：US14771665
申请日：2013-09-26
发明人： Yasushige Mukunoki
摘要： An inverter device is formed of the two systems of inverters stored inside a cylindrical metal casing. Each inverter converts DC power to three-phase AC power. The inverters are formed of power semiconductor elements, DC bus bars through which DC power supplied to the respective power semiconductor elements, capacitors connected to the DC bus bars, and switches connected between the respective DC bus bars and the DC input terminals. High-impedance switches are disposed in the vicinity of the DC input terminals. Hence, electromagnetic noises generated by switching actions of the power semiconductor elements are circulated within the inverters by way of the capacitors and eventually attenuated.
-
公开(公告)号：US10790813B2
公开(公告)日：2020-09-29
申请号：US16620092
申请日：2018-05-17
IPC分类号： H03K17/687 , H03K17/082 , H03K17/18 , H02M1/08 , G01R31/27
摘要： A drive circuit for a power semiconductor element according to the present disclosure includes: a control command unit that outputs a turn-on command for a power semiconductor element; a gate voltage detection unit that detects a gate voltage applied to a gate terminal after the control command unit outputs the turn-on command; a differentiator that subjects the gate voltage detected by the gate voltage detection unit to time differentiation; and a determination unit that determines, based on the gate voltage detected by the gate voltage detection unit and a differential value by the differentiator, whether the power semiconductor element is in a short-circuit state or not.
-
公开(公告)号：US10581337B2
公开(公告)日：2020-03-03
申请号：US15735987
申请日：2016-07-14
摘要： A diode rectifier rectifies an AC voltage output from a neutral-grounding three-phase AC power supply to a DC voltage. A smoothing capacitor smoothes the DC voltage rectified by the diode rectifier. An inverter converts the DC voltage smoothed by the smoothing capacitor into a desired AC voltage. A bidirectional switch and a Y capacitor are connected in series between one end of the smoothing capacitor and the ground. A detector detects a voltage across both ends of the smoothing capacitor. A controller drives the bidirectional switch in response to an output of the detector.
-
公开(公告)号：US11791746B2
公开(公告)日：2023-10-17
申请号：US17275676
申请日：2018-11-15
CPC分类号： H02M7/537 , H01F27/025 , H01F27/08 , H01F27/085 , H01F37/00 , H02M3/158 , H02M7/003
摘要： A power converter is provided that includes a reactor that is improved in effect of cooling a core and a winding. The power converter includes: a cooling member having a first cooling surface; and a reactor including a core portion and a winding portion. The core portion is a rectangular parallelepiped and disposed on the first cooling surface that is larger in area than the core portion in a plan view. The winding is wound around the core portion and the cooling member. The power converter further includes a power conversion module connected to one end of the winding portion.
-
公开(公告)号：US10134718B2
公开(公告)日：2018-11-20
申请号：US15738167
申请日：2016-06-28
发明人： Yasushige Mukunoki , Yoshiko Tamada
IPC分类号： H01L25/18 , H01L25/07 , H02M7/48 , H01L23/498 , H02M7/00 , H02M7/5387 , H01L23/538 , H01L23/367 , H01L23/00
摘要： A power semiconductor module including a positive-side switching device and a positive-side diode device which are mounted on a positive-side conductive pattern, and a negative-side switching device and a negative-side diode device which are mounted on an output-side conductive pattern. When an insulating substrate is viewed in plan view, the positive-side diode device and the negative-side diode device are disposed between the positive-side switching device and the negative-side switching device, and the negative-side diode device is disposed closer to the positive-side switching device than the positive-side diode device is.
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.015 秒)
