公开(公告)号：US20120021605A1

公开(公告)日：2012-01-26

申请号：US13013380

申请日：2011-01-25

申请人： Mitsuhiro OMURA ,  Yumi Ohno ,  Takaya Matsushita ,  Tokuhisa Ohiwa

发明人： Mitsuhiro OMURA ,  Yumi Ohno ,  Takaya Matsushita ,  Tokuhisa Ohiwa

IPC分类号： H01L21/475 ,  H01L21/4757

CPC分类号： H01L21/31116 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/32139

摘要： In a semiconductor device producing method according to one embodiment, an insulating film containing silicon is formed on a semiconductor substrate, a resist is deposited on the insulating film, the resist is patterned into a predetermined pattern, and the insulating film is processed by a dry etching treatment in which gas containing C, F, Br, H, and O is used with the resist having the predetermined pattern as a mask. A deposited film in which C and Br are coupled is produced on the resist.

摘要翻译： 在根据一个实施例的半导体器件制造方法中，在半导体衬底上形成含有硅的绝缘膜，在绝缘膜上沉积抗蚀剂，将抗蚀剂图案化成预定图案，并且通过干燥 蚀刻处理，其中使用含有C，F，Br，H和O的气体，其中具有预定图案的抗蚀剂作为掩模。 在抗蚀剂上制造其中C和Br连接的沉积膜。

公开(公告)号：US08513134B2

公开(公告)日：2013-08-20

申请号：US13013380

申请日：2011-01-25

申请人： Mitsuhiro Omura ,  Yumi Ohno ,  Takaya Matsushita ,  Tokuhisa Ohiwa

发明人： Mitsuhiro Omura ,  Yumi Ohno ,  Takaya Matsushita ,  Tokuhisa Ohiwa

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/32139

摘要： In a semiconductor device producing method according to one embodiment, an insulating film containing silicon is formed on a semiconductor substrate, a resist is deposited on the insulating film, the resist is patterned into a predetermined pattern, and the insulating film is processed by a dry etching treatment in which gas containing C, F, Br, H, and O is used with the resist having the predetermined pattern as a mask. A deposited film in which C and Br are coupled is produced on the resist.

摘要翻译： 在根据一个实施例的半导体器件制造方法中，在半导体衬底上形成含有硅的绝缘膜，在绝缘膜上沉积抗蚀剂，将抗蚀剂图案化成预定图案，并且通过干燥 蚀刻处理，其中使用含有C，F，Br，H和O的气体，其中具有预定图案的抗蚀剂作为掩模。 在抗蚀剂上制造其中C和Br连接的沉积膜。