公开(公告)号：US20120021605A1

公开(公告)日：2012-01-26

申请号：US13013380

申请日：2011-01-25

申请人： Mitsuhiro OMURA ,  Yumi Ohno ,  Takaya Matsushita ,  Tokuhisa Ohiwa

发明人： Mitsuhiro OMURA ,  Yumi Ohno ,  Takaya Matsushita ,  Tokuhisa Ohiwa

IPC分类号： H01L21/475 ,  H01L21/4757

CPC分类号： H01L21/31116 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/32139

摘要： In a semiconductor device producing method according to one embodiment, an insulating film containing silicon is formed on a semiconductor substrate, a resist is deposited on the insulating film, the resist is patterned into a predetermined pattern, and the insulating film is processed by a dry etching treatment in which gas containing C, F, Br, H, and O is used with the resist having the predetermined pattern as a mask. A deposited film in which C and Br are coupled is produced on the resist.

摘要翻译： 在根据一个实施例的半导体器件制造方法中，在半导体衬底上形成含有硅的绝缘膜，在绝缘膜上沉积抗蚀剂，将抗蚀剂图案化成预定图案，并且通过干燥 蚀刻处理，其中使用含有C，F，Br，H和O的气体，其中具有预定图案的抗蚀剂作为掩模。 在抗蚀剂上制造其中C和Br连接的沉积膜。

公开(公告)号：US08513134B2

公开(公告)日：2013-08-20

申请号：US13013380

申请日：2011-01-25

申请人： Mitsuhiro Omura ,  Yumi Ohno ,  Takaya Matsushita ,  Tokuhisa Ohiwa

发明人： Mitsuhiro Omura ,  Yumi Ohno ,  Takaya Matsushita ,  Tokuhisa Ohiwa

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/32139

摘要： In a semiconductor device producing method according to one embodiment, an insulating film containing silicon is formed on a semiconductor substrate, a resist is deposited on the insulating film, the resist is patterned into a predetermined pattern, and the insulating film is processed by a dry etching treatment in which gas containing C, F, Br, H, and O is used with the resist having the predetermined pattern as a mask. A deposited film in which C and Br are coupled is produced on the resist.

摘要翻译： 在根据一个实施例的半导体器件制造方法中，在半导体衬底上形成含有硅的绝缘膜，在绝缘膜上沉积抗蚀剂，将抗蚀剂图案化成预定图案，并且通过干燥 蚀刻处理，其中使用含有C，F，Br，H和O的气体，其中具有预定图案的抗蚀剂作为掩模。 在抗蚀剂上制造其中C和Br连接的沉积膜。

公开(公告)号：US20120009786A1

公开(公告)日：2012-01-12

申请号：US13178759

申请日：2011-07-08

申请人： Shigeru TAHARA ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru TAHARA ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： H01L21/3065

CPC分类号： H01L21/02071

摘要： A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.

摘要翻译： 进行对形成在基板上的金属层进行等离子体蚀刻的等离子体处理方法，以形成具有层叠结构的金属层的图案，然后形成含有形成金属层并沉积在侧壁上的金属的沉积物 该方法包括：通过在金属层的侧壁部分上形成金属的氧化物或氯化物形成保护层; 通过施加含有氟原子的气体的等离子体来除去沉积物; 并通过在形成保护层之后施加包含氢的等离子体并除去沉积物来还原金属的氧化物或氯化物。

公开(公告)号：US09126229B2

公开(公告)日：2015-09-08

申请号：US14116952

申请日：2012-05-10

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： B05D3/14 ,  H01L21/02 ,  H01L21/311

CPC分类号： B05D3/145 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/31116

摘要： A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.

摘要翻译： 通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的沉积物去除方法包括用于在加热基板的同时将基板暴露于氧等离子体的氧等离子体处理工艺和在氧等离子体处理之后的循环处理 处理，重复第一周期和第二周期的多个周期。 在第一阶段中，将基板暴露于处理室内的氟化氢气体和醇气体的混合物，并将醇气体的分压设定为第一分压。 在第二时段，通过排出处理室的内部，将醇气体的分压设定为低于第一分压的第二分压。

公开(公告)号：US20140083979A1

公开(公告)日：2014-03-27

申请号：US14116952

申请日：2012-05-10

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： B05D3/14

CPC分类号： B05D3/145 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/31116

摘要： A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.

摘要翻译： 通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的沉积物去除方法包括用于在加热基板的同时将基板暴露于氧等离子体的氧等离子体处理工艺和在氧等离子体处理之后的循环处理 处理，重复第一周期和第二周期的多个周期。 在第一阶段中，将基板暴露于处理室内的氟化氢气体和醇气体的混合物，并将醇气体的分压设定为第一分压。 在第二时段，通过排出处理室的内部，将醇气体的分压设定为低于第一分压的第二分压。

公开(公告)号：US5310454A

公开(公告)日：1994-05-10

申请号：US26042

申请日：1993-03-04

申请人： Tokuhisa Ohiwa ,  Hisataka Hayashi ,  Keiji Horioka ,  Haruo Okano ,  Takaya Matsushita ,  Isahiro Hasegawa ,  Akira Takeuchi

发明人： Tokuhisa Ohiwa ,  Hisataka Hayashi ,  Keiji Horioka ,  Haruo Okano ,  Takaya Matsushita ,  Isahiro Hasegawa ,  Akira Takeuchi

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/31116

摘要： A dry etching method by a plasma etching forms a mask pattern, having an opening up to 1 .mu.m width on a silicon oxide layer formed on a silicon substrate. The substrate is laced into a reactive chamber having an etching gas introducing means and fluorocarbon gas and hydrogen gas as the etching gas are introduced such that a ratio of the hydrogen gas to the gas mixture satisfies 50% to 80%. The plasma is generated, and by using the plasma etching, the silicon oxide layer is etched according to the mask pattern to form an opening having an aspect ratio of more than 1 in the silicon oxide layer.

摘要翻译： 通过等离子体蚀刻的干蚀刻方法形成在硅基板上形成的氧化硅层上具有至多1μm宽的开口的掩模图案。 衬底被引入具有蚀刻气体引入装置的反应室和碳氟化合物气体和氢气作为蚀刻气体，使得氢气与气体混合物的比率满足50％至80％。 产生等离子体，并且通过使用等离子体蚀刻，根据掩模图案蚀刻氧化硅层，以在氧化硅层中形成长径比大于1的开口。

公开(公告)号：US09177781B2

公开(公告)日：2015-11-03

申请号：US13178759

申请日：2011-07-08

申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： H01L21/02

CPC分类号： H01L21/02071

摘要： A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.

摘要翻译： 进行对形成在基板上的金属层进行等离子体蚀刻的等离子体处理方法，以形成具有层叠结构的金属层的图案，然后形成含有形成金属层并沉积在侧壁上的金属的沉积物 该方法包括：通过在金属层的侧壁部分上形成金属的氧化物或氯化物形成保护层; 通过施加含有氟原子的气体的等离子体来除去沉积物; 并通过在形成保护层之后施加包含氢的等离子体并除去沉积物来还原金属的氧化物或氯化物。

公开(公告)号：US08211783B2

公开(公告)日：2012-07-03

申请号：US12966458

申请日：2010-12-13

申请人： Noriko Sakurai ,  Katsunori Yahashi ,  Tokuhisa Ohiwa

发明人： Noriko Sakurai ,  Katsunori Yahashi ,  Tokuhisa Ohiwa

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include multiply stacking an insulating layer and a conductive layer alternately above a base member. The insulating layer includes silicon oxide. The conductive layer includes silicon. In addition, the method can form a SiOC film on a stacked body of the insulating layers and the conductive layers, pattern the SiOC film, and make a hole in the stacked body by etching the insulating layers and the conductive layers using the patterned SiOC film as a mask.

摘要翻译： 根据一个实施例，公开了一种用于制造半导体器件的方法。 该方法可以包括在基底部件上交替地叠加绝缘层和导电层。 绝缘层包括氧化硅。 导电层包括硅。 此外，该方法可以在绝缘层和导电层的层叠体上形成SiOC膜，对SiOC膜进行图案化，并且通过使用图案化的SiOC膜蚀刻绝缘层和导电层而在层叠体中形成孔 作为面具。

公开(公告)号：US5094879A

公开(公告)日：1992-03-10

申请号：US544595

申请日：1990-06-27

申请人： Tetsuo Matsuda ,  Haruo Okano ,  Tokuhisa Ohiwa

发明人： Tetsuo Matsuda ,  Haruo Okano ,  Tokuhisa Ohiwa

IPC分类号： C23C16/50 ,  C23C14/22 ,  C23C16/452 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31

CPC分类号： H01J37/32422 ,  C23C14/221 ,  C23C16/452 ,  H01J37/32357

摘要： According to a thin film forming method, at least one type of gas is activated to produce a plurality of species having positive or negative charges. The plurality of species pass through an electric field or magnetic field to extract specific species. The specific species are supplied to a substrate surface. Thereafter, the specific species are chemically reacted with each other to form a thin film. This extraction is performed using a difference in track corresponding to a ratio of mass to charge of the species passing through the electric field.

摘要翻译： 根据薄膜形成方法，至少一种类型的气体被激活以产生具有正或负电荷的多种物质。 多个物种通过电场或磁场提取特定物种。 特定的物质被提供给基底表面。 此后，特定物质彼此化学反应以形成薄膜。 使用对应于通过电场的物质的质量与电荷的比率的轨迹差进行该提取。

公开(公告)号：US20110291178A1

公开(公告)日：2011-12-01

申请号：US13041532

申请日：2011-03-07

申请人： Toshiyuki SASAKI ,  Noriko Sakurai ,  Tokuhisa Ohiwa ,  Katsunori Yahashi

发明人： Toshiyuki SASAKI ,  Noriko Sakurai ,  Tokuhisa Ohiwa ,  Katsunori Yahashi

IPC分类号： H01L21/336 ,  H01L29/792

CPC分类号： H01L29/7926 ,  H01L21/84 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/1203 ,  H01L29/66833

摘要： According to one embodiment, a semiconductor device includes a substrate, a lower gate layer, a stacked body, a dummy electrode layer, an insulating film, and a channel body. The lower gate layer is provided above the substrate. The stacked body includes a plurality of insulating layers and a plurality of electrode layers alternately stacked above the lower gate layer. The dummy electrode layer is provided between the lower gate layer and the stacked body, made of the same material as the electrode layer, and thicker than each of the electrode layers. The insulating film includes a charge storage film provided on a side wall of a hole formed to penetrate through the stacked body and the dummy electrode layer. The channel body is provided on an inside of the insulating film in the hole.

摘要翻译： 根据一个实施例，半导体器件包括衬底，下栅极层，层叠体，虚设电极层，绝缘膜和沟道体。 下栅极层设置在衬底上。 堆叠体包括多个绝缘层和交替堆叠在下栅极层上的多个电极层。 虚设电极层设置在下电极层和层叠体之间，由与电极层相同的材料制成，并且比每个电极层厚。 绝缘膜包括设置在贯穿层叠体形成的孔的侧壁上的电荷存储膜和虚拟电极层。 通道体设置在孔中的绝缘膜的内侧。