ELECTRIC VEHICLE WITH GROUND FAULT DETECTING SYSTEM
    2.
    发明申请
    ELECTRIC VEHICLE WITH GROUND FAULT DETECTING SYSTEM 有权
    电动车辆与地面故障检测系统

    公开(公告)号:US20100244850A1

    公开(公告)日:2010-09-30

    申请号:US12751247

    申请日:2010-03-31

    IPC分类号: G01R31/02

    摘要: An electric vehicle incorporates a ground fault detecting system and has first and second ungrounded power supplies. The ground fault detecting system includes a first insulation resistance detector for detecting a first insulation resistance of the first ungrounded power supply with respect to a grounded region of the electric vehicle, and a second insulation resistance detector for detecting a second insulation resistance of the second ungrounded power supply with respect to the grounded region. The first insulation resistance detector and the second insulation resistance detector detect the first insulation resistance and the second insulation resistance at different times, respectively.

    摘要翻译: 电动车辆包括接地故障检测系统,并具有第一和第二未接地电源。 接地故障检测系统包括第一绝缘电阻检测器,用于检测第一不接地电源相对于电动车辆的接地区域的第一绝缘电阻;以及第二绝缘电阻检测器,用于检测第二未接地电源的第二绝缘电阻 电源相对于接地区域。 第一绝缘电阻检测器和第二绝缘电阻检测器分别在不同时间检测第一绝缘电阻和第二绝缘电阻。

    ELECTRIC VEHICLE WITH GROUND FAULT DETECTING SYSTEM
    3.
    发明申请
    ELECTRIC VEHICLE WITH GROUND FAULT DETECTING SYSTEM 有权
    电动车辆与地面故障检测系统

    公开(公告)号:US20100244849A1

    公开(公告)日:2010-09-30

    申请号:US12750214

    申请日:2010-03-30

    IPC分类号: G01R31/12

    摘要: An electric vehicle incorporates a ground fault detecting system for preventing a ground fault detector from detecting a ground fault in error. First and second ground fault detectors are associated respectively with first and second ungrounded power supplies which generate respective different voltages. Since the first and second ground fault detectors are activated in different periods, the ground fault detecting system prevents a ground fault from being detected in error.

    摘要翻译: 电动车辆包括接地故障检测系统,用于防止接地故障检测器检测到接地故障。 第一和第二接地故障检测器分别与产生各自不同电压的第一和第二未接地电源相关联。 由于第一和第二接地故障检测器在不同的时间段内被激活,所以接地故障检测系统防止接地故障被错误地检测到。

    SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SAME
    4.
    发明申请
    SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SAME 有权
    半导体存储器件及其制造方法

    公开(公告)号:US20120329223A1

    公开(公告)日:2012-12-27

    申请号:US13551240

    申请日:2012-07-17

    IPC分类号: H01L21/336

    摘要: In a semiconductor storage device a select gate electrode is arranged into a ring shape so as to surround the second impurity regions, and is electrically connected to a word line. A first control gate electrode is arranged into a ring shape on the outer peripheral side of the select gate electrode, and a second control gate electrode is arranged into a ring shape on the inner peripheral side of the select gate electrode. A pair of first and second bit lines corresponding to every row are placed on the memory cells of the device, a first bit line is electrically connected to one of first impurity regions that are adjacent along the row direction, and a second bit line is electrically connected to the other of the first impurity regions that are adjacent along the row direction.

    摘要翻译: 在半导体存储装置中,选择栅电极被设置成围绕第二杂质区域的环形,并且与字线电连接。 第一控制栅电极在选择栅电极的外周侧被布置成环形,并且第二控制栅电极在选择栅电极的内周侧上布置成环形。 对应于每行的一对第一和第二位线被放置在器件的存储单元上,第一位线电连接到沿着行方向相邻的第一杂质区之一,第二位线是电 连接到沿着行方向相邻的第一杂质区域中的另一个。

    SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SAME
    5.
    发明申请
    SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SAME 失效
    半导体存储器件及其制造方法

    公开(公告)号:US20100264483A1

    公开(公告)日:2010-10-21

    申请号:US12761149

    申请日:2010-04-15

    IPC分类号: H01L27/115 H01L21/8246

    摘要: A semiconductor storage device and method of manufacturing same at a lower cost by without forming a photolithographic resist. Second impurity regions are arranged in such a manner that second impurity regions adjacent along the column direction are joined together. A select gate electrode is arranged into a ring shape so as to surround the second impurity regions, and is electrically connected to a word line. A first control gate electrode is arranged into a ring shape on the outer peripheral side of the select gate electrode, and a second control gate electrode is arranged into a ring shape on the inner peripheral side of the select gate electrode. A pair of first and second bit lines corresponding to every row are placed on the memory cells of the device, a first bit line is electrically connected to one of first impurity regions that are adjacent along the row direction, and a second bit line is electrically connected to the other of the first impurity regions that are adjacent along the row direction.

    摘要翻译: 一种半导体存储装置及其制造方法,通过不形成光刻抗蚀剂,以较低成本制造。 第二杂质区域被布置成使得沿着列方向相邻的第二杂质区域连接在一起。 选择栅电极被设置成围绕第二杂质区域的环形,并且电连接到字线。 第一控制栅电极在选择栅电极的外周侧被布置成环形,并且第二控制栅电极在选择栅电极的内周侧上布置成环形。 对应于每行的一对第一和第二位线被放置在器件的存储单元上,第一位线电连接到沿着行方向相邻的第一杂质区之一,第二位线是电 连接到沿着行方向相邻的第一杂质区域中的另一个。

    Fuel cell system
    6.
    发明申请
    Fuel cell system 有权
    燃料电池系统

    公开(公告)号:US20080182151A1

    公开(公告)日:2008-07-31

    申请号:US12011410

    申请日:2008-01-25

    IPC分类号: H01M8/02

    摘要: A fuel cell stack includes a stack body formed by stacking a plurality of power generation cells. At opposite ends of the stack body in a stacking direction, end plates are provided. A second power collecting terminal protrudes outwardly from the end plate. One end of a bus bar is electrically connected to the second power collecting terminal such that the bus bar extends along an end plate surface intersecting the second power collecting terminal. A high voltage cable is connected to the other end of the bus bar. The high voltage cable is drawn toward the end plate.

    摘要翻译: 燃料电池堆包括通过堆叠多个发电电池而形成的堆叠体。 在堆叠方向的堆叠体的相对端,设有端板。 第二集电端子从端板向外突出。 母线的一端与第二集电端子电连接,使得汇流条沿着与第二集电端子相交的端板表面延伸。 高压电缆连接到母线的另一端。 高压电缆被拉向端板。