摘要:
When a malfunction of an ungrounded drive electric system including first and second ungrounded power supplies, an inverter, and a motor which is energized by the first and second ungrounded power supplies through the inverter, i.e., an erroneous opening of switches of a battery, is detected, switches of an insulation resistance detector are opened to insolate the insulation resistance detector from the ungrounded drive electric system.
摘要:
An electric vehicle incorporates a ground fault detecting system and has first and second ungrounded power supplies. The ground fault detecting system includes a first insulation resistance detector for detecting a first insulation resistance of the first ungrounded power supply with respect to a grounded region of the electric vehicle, and a second insulation resistance detector for detecting a second insulation resistance of the second ungrounded power supply with respect to the grounded region. The first insulation resistance detector and the second insulation resistance detector detect the first insulation resistance and the second insulation resistance at different times, respectively.
摘要:
An electric vehicle incorporates a ground fault detecting system for preventing a ground fault detector from detecting a ground fault in error. First and second ground fault detectors are associated respectively with first and second ungrounded power supplies which generate respective different voltages. Since the first and second ground fault detectors are activated in different periods, the ground fault detecting system prevents a ground fault from being detected in error.
摘要:
In a semiconductor storage device a select gate electrode is arranged into a ring shape so as to surround the second impurity regions, and is electrically connected to a word line. A first control gate electrode is arranged into a ring shape on the outer peripheral side of the select gate electrode, and a second control gate electrode is arranged into a ring shape on the inner peripheral side of the select gate electrode. A pair of first and second bit lines corresponding to every row are placed on the memory cells of the device, a first bit line is electrically connected to one of first impurity regions that are adjacent along the row direction, and a second bit line is electrically connected to the other of the first impurity regions that are adjacent along the row direction.
摘要:
A semiconductor storage device and method of manufacturing same at a lower cost by without forming a photolithographic resist. Second impurity regions are arranged in such a manner that second impurity regions adjacent along the column direction are joined together. A select gate electrode is arranged into a ring shape so as to surround the second impurity regions, and is electrically connected to a word line. A first control gate electrode is arranged into a ring shape on the outer peripheral side of the select gate electrode, and a second control gate electrode is arranged into a ring shape on the inner peripheral side of the select gate electrode. A pair of first and second bit lines corresponding to every row are placed on the memory cells of the device, a first bit line is electrically connected to one of first impurity regions that are adjacent along the row direction, and a second bit line is electrically connected to the other of the first impurity regions that are adjacent along the row direction.
摘要:
A fuel cell stack includes a stack body formed by stacking a plurality of power generation cells. At opposite ends of the stack body in a stacking direction, end plates are provided. A second power collecting terminal protrudes outwardly from the end plate. One end of a bus bar is electrically connected to the second power collecting terminal such that the bus bar extends along an end plate surface intersecting the second power collecting terminal. A high voltage cable is connected to the other end of the bus bar. The high voltage cable is drawn toward the end plate.