PREPARATION METHOD OF SUPERABSORBENT POLYMER
    8.
    发明申请
    PREPARATION METHOD OF SUPERABSORBENT POLYMER 有权
    超吸收聚合物的制备方法

    公开(公告)号:US20140051813A1

    公开(公告)日:2014-02-20

    申请号:US13824970

    申请日:2011-11-28

    IPC分类号: B01J20/26

    摘要: The present invention relates to a preparation method of a superabsorbent polymer, and specifically to a method of preparing a superabsorbent polymer including the steps of: preparing a hydrous gel phase polymer by thermal polymerizing or photo-polymerizing a monomer composition including a water-soluble ethylene-based unsaturated monomer and a polymerization initiator; drying the hydrous gel phase polymer; milling the dried polymer; classifying the milled hydrous gel phase polymer into two or more grades by particle size; adding a surface cross-linking agent to each hydrous gel phase polymer classified into two or more grades; and carrying out a surface cross-linking reaction of the hydrous gel phase polymer to which the surface cross-linking agent is added.

    摘要翻译: 本发明涉及超吸收性聚合物的制备方法,具体涉及一种制备超吸收性聚合物的方法,包括以下步骤:通过热聚合或光聚合包含水溶性乙烯的单体组合物制备含水凝胶相聚合物 的不饱和单体和聚合引发剂; 干燥含水凝胶相聚合物; 研磨干燥聚合物; 将研磨的含水凝胶相聚合物通过粒度分级成两个或更多个等级; 向分级为两个或更多个等级的每个含水凝胶相聚合物加入表面交联剂; 并进行加入表面交联剂的含水凝胶相聚合物的表面交联反应。

    CMOS image sensor and manufacturing method thereof
    10.
    发明申请
    CMOS image sensor and manufacturing method thereof 有权
    CMOS图像传感器及其制造方法

    公开(公告)号:US20060124986A1

    公开(公告)日:2006-06-15

    申请号:US11293082

    申请日:2005-12-05

    申请人: Sang-Gi Lee

    发明人: Sang-Gi Lee

    IPC分类号: H01L29/94

    摘要: A gate insulation layer with a high dielectric constant for a CMOS image sensor formed by a damascene process. A silicide layer on a gate electrode layer is formed in both a pixel region and a peripheral circuit region, and a silicide layer on a source/drain region is formed only in a peripheral circuit.

    摘要翻译: 具有高介电常数的栅极绝缘层,用于通过镶嵌工艺形成的CMOS图像传感器。 栅极电极层上的硅化物层形成在像素区域和外围电路区域中,源极/漏极区域上的硅化物层仅形成在外围电路中。