公开(公告)号：US20080089154A1

公开(公告)日：2008-04-17

申请号：US11952540

申请日：2007-12-07

申请人： Motoyasu Terao ,  Norikatsu Takaura ,  Kenzp Kurotsuchi ,  Hideyuki Matsuoka ,  Tsuyoshi Yamauchi

发明人： Motoyasu Terao ,  Norikatsu Takaura ,  Kenzp Kurotsuchi ,  Hideyuki Matsuoka ,  Tsuyoshi Yamauchi

IPC分类号： G11C7/00

CPC分类号： G11C11/5678 ,  G11C13/0004 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2454 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1213 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

摘要： A memory device is provided which includes a substrate, lower electrodes, selecting elements, memory elements formed of chalcogenide material and upper electrodes. The selecting elements and the memory elements are arranged to be disposed between the upper electrodes and the lower electrodes. In addition, the lower electrodes, the memory elements and the upper electrodes are disposed along lines perpendicular to the substrate surface when the memory device is viewed in a first direction.

摘要翻译： 提供了一种存储器件，其包括衬底，下电极，选择元件，由硫族化物材料形成的存储元件和上电极。 选择元件和存储元件布置成设置在上电极和下电极之间。 此外，当沿第一方向观察存储器件时，下电极，存储元件和上电极沿垂直于衬底表面的线设置。

公开(公告)号：US20090250680A1

公开(公告)日：2009-10-08

申请号：US12487492

申请日：2009-06-18

申请人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Kurotsuchi ,  Tsuyoshi Yamauchi

发明人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Kurotsuchi ,  Tsuyoshi Yamauchi

IPC分类号： H01L47/00

CPC分类号： H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.

摘要翻译： 通过高速非易失性相变存储器，提高了刷新次数的可靠性。 在使用MISFET作为选择存储单元的晶体管的相变存储器的存储单元形成区域中，形成了使用相变材料的包括电阻元件的存储单元的相变材料层，用于常用。 结果，减少了通过蚀刻对存储单元元件的隔离而导致的相变材料的形状变化和组成变化，从而提高了存储单元的刷新次数的可靠性。

公开(公告)号：US07335907B2

公开(公告)日：2008-02-26

申请号：US10790881

申请日：2004-03-03

申请人： Motoyasu Terao ,  Norikatsu Takaura ,  Kenzo Kurotsuchi ,  Hideyuki Matsuoka ,  Tsuyoshi Yamauchi

发明人： Motoyasu Terao ,  Norikatsu Takaura ,  Kenzo Kurotsuchi ,  Hideyuki Matsuoka ,  Tsuyoshi Yamauchi

IPC分类号： H01L47/00

CPC分类号： G11C11/5678 ,  G11C13/0004 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2454 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1213 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

摘要： A phase change memory device is provided which is constituted by memory cells using memory elements and select transistors and having high heat resistance to be capable of an operation at 140 degrees or higher. As a device configuration, a recording layer of which, of Zn—Ge—Te, content of Zn, Cd or the like is 20 atom percent or more, content of at least one element selected from the group consisting of Ge and Sb is less than 40 atom percent, and content of Te is 40 atom percent or more is used. It is thereby possible to implement the memory device usable for an application which may be performed at a high temperature such as an in-vehicle use.

摘要翻译： 提供一种相变存储器件，其由使用存储元件和选择晶体管的存储器单元构成，并且具有高耐热性能够在140度以上的操作。 作为器件结构，其中Zn-Ge-Te，Zn，Cd等的含量为20原子％以上的记录层选自Ge和Sb中的至少一种元素的含量较少 40原子％以上，Te含量为40原子％以上。 由此，可以实现可以在诸如车载用途的高温下执行的应用的存储装置。

公开(公告)号：US08129707B2

公开(公告)日：2012-03-06

申请号：US12487492

申请日：2009-06-18

申请人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Kurotsuchi ,  Tsuyoshi Yamauchi

发明人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Kurotsuchi ,  Tsuyoshi Yamauchi

IPC分类号： H01L47/00

CPC分类号： H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.

摘要翻译： 通过高速非易失性相变存储器，提高了刷新次数的可靠性。 在使用MISFET作为选择存储单元的晶体管的相变存储器的存储单元形成区域中，形成了使用相变材料的包括电阻元件的存储单元的相变材料层，用于常用。 结果，减少了通过蚀刻对存储单元元件的隔离而导致的相变材料的形状变化和组成变化，从而提高了存储单元的刷新次数的可靠性。

公开(公告)号：US07470923B2

公开(公告)日：2008-12-30

申请号：US11370945

申请日：2006-03-09

申请人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Kurotsuchi ,  Tsuyoshi Yamauchi

发明人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Kurotsuchi ,  Tsuyoshi Yamauchi

IPC分类号： H01L47/00

CPC分类号： H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.

公开(公告)号：US07071485B2

公开(公告)日：2006-07-04

申请号：US10790764

申请日：2004-03-03

申请人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Kurotsuchi ,  Tsuyoshi Yamauchi

发明人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Kurotsuchi ,  Tsuyoshi Yamauchi

IPC分类号： H01L47/00 ,  H01L29/04

CPC分类号： H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.

公开(公告)号：US20080048166A1

公开(公告)日：2008-02-28

申请号：US11907989

申请日：2007-10-19

申请人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Kurotsuchi ,  Tsuyoshi Yamauchi

发明人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Kurotsuchi ,  Tsuyoshi Yamauchi

IPC分类号： H01L47/00

CPC分类号： H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.

摘要翻译： 通过高速非易失性相变存储器，提高了刷新次数的可靠性。 在使用MISFET作为选择存储单元的晶体管的相变存储器的存储单元形成区域中，形成了使用相变材料的包括电阻元件的存储单元的相变材料层，用于常用。 结果，减少了通过蚀刻对存储单元元件的隔离而导致的相变材料的形状变化和组成变化，从而提高了存储单元的刷新次数的可靠性。

公开(公告)号：US20060157680A1

公开(公告)日：2006-07-20

申请号：US11370945

申请日：2006-03-09

申请人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Kurotsuchi ,  Tsuyoshi Yamauchi

发明人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Kurotsuchi ,  Tsuyoshi Yamauchi

IPC分类号： H01L29/04

CPC分类号： H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.

摘要翻译： 通过高速非易失性相变存储器，提高了刷新次数的可靠性。 在使用MISFET作为选择存储单元的晶体管的相变存储器的存储单元形成区域中，形成了使用相变材料的包括电阻元件的存储单元的相变材料层，用于常用。 结果，减少了通过蚀刻对存储单元元件的隔离而导致的相变材料的形状变化和组成变化，从而提高了存储单元的刷新次数的可靠性。

公开(公告)号：US20050111247A1

公开(公告)日：2005-05-26

申请号：US10790764

申请日：2004-03-03

申请人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Korutsuchi ,  Tsuyoshi Yamauchi

发明人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Korutsuchi ,  Tsuyoshi Yamauchi

IPC分类号： H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/24 ,  H01L29/02

CPC分类号： H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.

摘要翻译： 通过高速非易失性相变存储器，提高了刷新次数的可靠性。 在使用MISFET作为选择存储单元的晶体管的相变存储器的存储单元形成区域中，形成了使用相变材料的包括电阻元件的存储单元的相变材料层，用于常用。 结果，减少了通过蚀刻对存储单元元件的隔离而导致的相变材料的形状变化和组成变化，从而提高了存储单元的刷新次数的可靠性。

公开(公告)号：US07834337B2

公开(公告)日：2010-11-16

申请号：US10587079

申请日：2004-12-20

申请人： Norikatsu Takaura ,  Motoyasu Terao ,  Hideyuki Matsuoka ,  Kenzo Kurotsuchi

发明人： Norikatsu Takaura ,  Motoyasu Terao ,  Hideyuki Matsuoka ,  Kenzo Kurotsuchi

IPC分类号： H01L29/02

CPC分类号： G11C13/0004 ,  G11C13/04 ,  G11C13/047 ,  G11C2213/56 ,  G11C2213/71 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

摘要： A phase-change memory device including a memory cell having a memory element and a select transistor is improved in heat resistance so that it may be operable at 145° C. or higher.The memory layer is used which has a content of Zn or Cd of 20 at % or more and 50 at % or less, a content of Ge or Sb of 5 at % or more and 25 at % or less, and a content of Te of 40 at % or more and 65 at % or less in Zn-Ge-Te.

摘要翻译： 包括具有存储元件和选择晶体管的存储单元的相变存储器件的耐热性得到改善，使得其在145℃以上可操作。 使用具有20原子％以上且50原子％以下的Zn或Cd含量的记忆层，Ge或Sb的含量为5原子％以上且25原子％以下，Te含量 在Zn-Ge-Te中为40at％以上且65at％以下。