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公开(公告)号：US5146465A
公开(公告)日：1992-09-08
申请号：US649670
申请日：1991-02-01
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/105 , H01S2301/173 , H01S2302/00 , H01S2304/04 , H01S3/0959 , H01S5/0213 , H01S5/0281 , H01S5/041 , H01S5/0422 , H01S5/183 , H01S5/32341
摘要： An improved aluminum gallium nitride material is disclosed, which permits the fabrication of improved optical devices such as laser mirrors (1, 2), as well as quantum wells and optical filters. The optical devices are constructed by depositing a buffer layer (7) of aluminum nitride onto a substrate (6), with alternating layers (10, 12, 14, etc.) of Al.sub.x Ga.sub.1-x N and Al.sub.y Ga.sub.1-y N, where x and y have values of between 0 and 1. Edge emitting lasers (31), surface emitting lasers (52) and quantum wells operating in the ultraviolet region are disclosed. The method of the present invention permits the ability to deposit thin, reproducible and abrupt layers of the improved material to permit the construction of rugged, solid state devices operating at ultraviolet wavelengths.
摘要翻译： 公开了一种改进的氮化镓铝材料，其允许制造改进的光学器件，例如激光镜（1,2）以及量子阱和光学滤光器。 光学器件通过将Al x Ga 1-x N和Al y Ga 1-y N的交替层（10,12,14等）沉积到衬底（6）上而形成氮化铝缓冲层（7），其中x和y具有 公开了在0和1之间的值。在紫外区域中操作的边缘发射激光器（31），表面发射激光器（52）和量子阱。 本发明的方法允许沉积改进材料的薄的，可再现的和突然的层的能力，以允许构建以紫外线波长工作的坚固的固态器件。
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公开(公告)号：US5321713A
公开(公告)日：1994-06-14
申请号：US906242
申请日：1992-06-29
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/105 , H01S2301/173 , H01S2302/00 , H01S2304/04 , H01S3/0959 , H01S5/0213 , H01S5/0281 , H01S5/041 , H01S5/0422 , H01S5/183 , H01S5/32341
摘要： An improved aluminum gallium nitride material is disclosed, which permits the fabrication of improved optical devices such as laser mirrors (1, 2), as well as quantum wells and optical filters. The optical devices are constructed by depositing a buffer layer (7) of aluminum nitride onto a substrate (6), with alternating layers (10, 12, 14, etc.) of AlxGal-xN and AlyGal-yN, where x and y have values of between 0 and 1. Edge emitting lasers (31), surface emitting lasers (52) and quantum wells operating in the ultraviolet region are disclosed. The method of the present invention permits the ability to deposit thin, reproducible and abrupt layers of the improved material to permit the construction of rugged, solid state devices operating at ultraviolet wavelengths.
摘要翻译： 公开了一种改进的氮化镓铝材料，其允许制造改进的光学器件，例如激光镜（1,2）以及量子阱和光学滤光器。 光学器件通过将氮化铝缓冲层（7）沉积到衬底（6）上，其中x和y具有Al x Ga 1-x N和Al y Ga 1-y N的交替层（10,12,14等） 公开了在0和1之间的值。在紫外区域中操作的边缘发射激光器（31），表面发射激光器（52）和量子阱。 本发明的方法允许沉积改进材料的薄的，可再现的和突然的层的能力，以允许构建以紫外线波长工作的坚固的固态器件。
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公开(公告)号：US5296395A
公开(公告)日：1994-03-22
申请号：US26528
申请日：1993-03-03
IPC分类号： H01L29/20 , H01L29/205 , H01L29/778 , H01L21/265
CPC分类号： H01L29/7787 , H01L29/205 , H01L29/2003 , Y10S148/072 , Y10S148/113 , Y10S977/755 , Y10S977/76 , Y10S977/84
摘要： A high electron mobility transistor is disclosed, which takes advantage of the increased mobility due to a two dimensional electron gas occurring in GaN/Al.sub.x Ga.sub.1-x N heterojunctions. These structures are deposited on basal plane sapphire using low pressure metalorganic chemical vapor deposition. The electron mobility of the heterojunction is approximately 620 cm.sup.2 per volt second at room temperature as compared to 56 cm.sup.2 per volt second for bulk GaN of the same thickness deposited under identical conditions. The mobility of the bulk sample peaked at 62 cm.sup.2 per volt second at 180.degree. K. and decreased to 19 cm.sup.2 per volt second at 77.degree. K. The mobility for the heterostructure, however, increased to a value of 1,600 cm.sup.2 per volt second at 77.degree. K. and saturated at 4.degree. K.
摘要翻译： 公开了一种高电子迁移率晶体管，其利用由于在GaN / Al x Ga 1-x N异质结中发生的二维电子气体而增加的迁移率。 这些结构使用低压金属有机化学气相沉积沉积在基面蓝宝石上。 异相结构的电子迁移率在室温下为约620cm 2 /伏特，相比之下，相同厚度的体积GaN在相同条件下沉积的56nm / v 2秒。 体积样品的迁移率在180度K时以每平方厘米62平方厘米的峰值峰值，并且在77度K下降至每平方厘米19伏特/平方厘米。然而，异质结构的迁移率增加到每伏特1,600厘米2的值 77度K，饱和4度。
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4.发明授权High electron mobility transistor with GaN/Al.sub.x Ga.sub.1-x N heterojunctions 失效具有GaN / Al x Ga 1-x N异质结的高电子迁移率晶体管
公开(公告)号：US5192987A
公开(公告)日：1993-03-09
申请号：US701792
申请日：1991-05-17
IPC分类号： H01L29/20 , H01L29/205 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/205 , H01L29/2003 , Y10S148/072 , Y10S148/113 , Y10S977/755 , Y10S977/76 , Y10S977/84
摘要： A high electron mobility transistor is disclosed, which takes advantage of the increased mobility due to a two dimensional electron gas occurring in GaN/Al.sub.x Ga.sub.1-x N heterojunctions. These structures are deposited on basal plane sapphire using low pressure metalorganic chemical vapor deposition. The electron mobility of the heterojunction is aproximately 620 cm.sup.2 per volt second at room temperature as compared to 56 cm.sup.2 per volt second at 180.degree. K. and decreased to 19 cm.sup.2 per volt second at 77.degree. K. The mobility for the heterostructure, however, increased to a value of 1,600 cm.sup.2 per volt second at 77.degree. K. and saturated at 4.degree. K.
摘要翻译： 公开了一种高电子迁移率晶体管，其利用由于在GaN / Al x Ga 1-x N异质结中发生的二维电子气体而增加的迁移率。 这些结构使用低压金属有机化学气相沉积沉积在基面蓝宝石上。 异相结构的电子迁移率在室温下约为每平方米620平方厘米，而相对于180度K时每伏特56平方厘米，77度K时每异常结的电子迁移率降至19平方厘米。然而异质结的迁移率， 在77℃下增加到1600伏特/伏特，在4℃下饱和。
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公开(公告)号：US5278435A
公开(公告)日：1994-01-11
申请号：US895350
申请日：1992-06-08
申请人： James M. Van Hove , Jon N. Kuznia , Donald T. Olson , Muhammad A. Kahn , Margaret C. Blasingame
发明人： James M. Van Hove , Jon N. Kuznia , Donald T. Olson , Muhammad A. Kahn , Margaret C. Blasingame
IPC分类号： H01L31/0224 , H01L31/0304 , H01L31/18 , H01L27/14
CPC分类号： H01L31/03046 , H01L31/0224 , H01L31/1852 , Y02E10/544
摘要： The invention is an Al.sub.x Ga.sub.1-x N ultraviolet detector with extremely high responsivity at over 200 to 365 nanometers and a very sharp long wavelength cutoff. The active layer for the sensors is a single crystal Al.sub.x Ga.sub.1-x N preferably deposited over a basal plane sapphire substrate using a switched atomic layer epitaxy process.
摘要翻译： 本发明是一种Al x Ga 1-x N紫外检测器，具有超过200至365纳米的极高响应度和非常尖锐的长波长截止。 用于传感器的有源层是使用切换的原子层外延工艺优选沉积在基底蓝宝石衬底上的单晶Al x Ga 1-x N。
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