公开(公告)号：US20080315237A1

公开(公告)日：2008-12-25

申请号：US11597413

申请日：2005-05-19

申请人： Koji Kamei ,  Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

发明人： Koji Kamei ,  Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.

摘要翻译： 该氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体构成的n型半导体层，发光层和p型半导体层，并依次沉积在基板上， 并且还包括分别与n型半导体层和p型半导体层接触的负极和正极，其中所述正极具有由包括接触金属的三层结构构成的透光性电极 至少与p型半导体层接触的层，设置在接触金属层上并具有大于接触金属层的导电性的电流扩散层，以及设置在电流扩散层上的接合焊盘层，以及混合正极 包含形成接触金属层的金属的电极 - 金属层存在于p型半导体的正极侧表面上 导体层。

公开(公告)号：US07402830B2

公开(公告)日：2008-07-22

申请号：US10592759

申请日：2005-03-15

申请人： Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

发明人： Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  H01L33/0095

摘要： The inventive gallium nitride compound semiconductor light-emitting device comprises a substrate; an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, the layers being successively provided atop the substrate and being formed of a gallium nitride compound semiconductor; a negative electrode provided on the n-type semiconductor layer at a certain portion thereof, the portion being exposed by partial, depthwise removal of the light-emitting layer and the p-type semiconductor layer altogether through reactive ion etching; and a positive electrode provided on the remaining p-type semiconductor layer, wherein the gallium nitride compound semiconductor light-emitting device is produced through reactive ion etching by use of silicon tetrachloride as the sole etching gas.

摘要翻译： 本发明的氮化镓化合物半导体发光器件包括衬底; n型半导体层，发光层，p型半导体层，这些层被连续地设置在衬底上并由氮化镓化合物半导体形成; 设置在n型半导体层的某一部分的负极，该部分通过反应离子蚀刻部分地深度地去除发光层和p型半导体层而被曝光; 以及设置在剩余p型半导体层上的正极，其中通过使用四氯化硅作为唯一蚀刻气体通过反应离子蚀刻制造氮化镓系化合物半导体发光器件。

公开(公告)号：US20070187666A1

公开(公告)日：2007-08-16

申请号：US10592759

申请日：2005-03-15

申请人： Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

发明人： Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  H01L33/0095

摘要： An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having excellent heat resistance, which device is resistive to an increase in the forward operation voltage (VF) caused by mild heating performed after formation of the light-emitting device (e.g., heating to about 300° C. during mounting of the light-emitting device). The inventive gallium nitride compound semiconductor light-emitting device comprises a substrate; an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, the layers being successively provided atop the substrate and being formed of a gallium nitride compound semiconductor; a negative electrode provided on the n-type semiconductor layer at a certain portion thereof, the portion being exposed by partial, depthwise removal of the light-emitting layer and the p-type semiconductor layer altogether through reactive ion etching; and a positive electrode provided on the remaining p-type semiconductor layer, wherein the gallium nitride compound semiconductor light-emitting device is produced through reactive ion etching by use of silicon tetrachloride as the sole etching gas.

摘要翻译： 本发明的目的是提供一种耐热性优异的氮化镓系化合物半导体发光元件，其特征在于，能够抑制由形成发光后的温和加热引起的正向工作电压（VF）的上升 装置（例如，在安装发光装置期间加热至约300℃）。 本发明的氮化镓化合物半导体发光器件包括衬底; n型半导体层，发光层，p型半导体层，这些层被连续地设置在衬底上并由氮化镓化合物半导体形成; 设置在n型半导体层的某一部分的负极，该部分通过反应离子蚀刻部分地深度地去除发光层和p型半导体层而被曝光; 以及设置在剩余p型半导体层上的正极，其中通过使用四氯化硅作为唯一蚀刻气体通过反应离子蚀刻制造氮化镓系化合物半导体发光器件。

公开(公告)号：US08049243B2

公开(公告)日：2011-11-01

申请号：US11597413

申请日：2005-05-19

申请人： Koji Kamei ,  Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

发明人： Koji Kamei ,  Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.

摘要翻译： 该氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体构成的n型半导体层，发光层和p型半导体层，并依次沉积在基板上， 并且还包括分别与n型半导体层和p型半导体层接触的负极和正极，其中所述正极具有由包括接触金属的三层结构构成的透光性电极 至少与p型半导体层接触的层，设置在接触金属层上并具有大于接触金属层的导电性的电流扩散层，以及设置在电流扩散层上的接合焊盘层，以及混合正极 包含形成接触金属层的金属的电极 - 金属层存在于p型半导体的正极侧表面上 导体层。

公开(公告)号：US20080048172A1

公开(公告)日：2008-02-28

申请号：US10586909

申请日：2005-01-28

申请人： Noritaka Muraki ,  Munetaka Watanabe ,  Hisayuki Miki ,  Yasushi Ohno

发明人： Noritaka Muraki ,  Munetaka Watanabe ,  Hisayuki Miki ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/42

摘要： A gallium nitride compound semiconductor light-emitting device includes a crystalline substrate (10), a light-emiting layer (15) of a quantum well structure which is formed of a gallium nitride compound semiconductor barrier layer and a gallium nitride compound semiconductor well layer, which light-emitting layer is provided on a second side of the crystalline substrate, a contact layer (17) formed of a Group III-V compound semiconductor for providing an Ohmic electrode for supplying device operation current to the light-emitting layer, and an Ohmic electrode (18) which is provided on the contact layer and has an aperture through which a portion of the contact layer is exposed. The Ohmic electrode exhibits light permeability with respect to light emitted from the light-emitting layer. The well layer contains a thick portion having a large thickness and a thin portion having a small thickness.

摘要翻译： 氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体势垒层和氮化镓系化合物半导体阱层构成的量子阱结构的结晶性基板（10），发光层（15） 所述发光层设置在所述结晶基板的第二面上，由用于提供用于向所述发光层提供器件工作电流的欧姆电极的III-V族化合物半导体形成的接触层（17） 欧姆电极（18），其设置在接触层上并且具有孔，接触层的一部分穿过该孔露出。 欧姆电极相对于从发光层发射的光呈现透光性。 阱层包含厚度较大的厚壁部分和厚度较小的薄壁部分。

公开(公告)号：US20070200129A1

公开(公告)日：2007-08-30

申请号：US10593288

申请日：2005-04-28

申请人： Munetaka Watanabe ,  Noritaka Muraki ,  Koji Kamei ,  Yasushi Ohno

发明人： Munetaka Watanabe ,  Noritaka Muraki ,  Koji Kamei ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere. The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer, and a bonding pad layer on the current diffusing layer.

摘要翻译： 本发明的目的是提供一种在氧气氛中具有高透明度，低接触电阻和优异的电流扩散性，并且不需要电子束照射，高温退火或热处理用于合金化的正极。 本发明的氮化镓系化合物半导体发光元件用透明正极包括与p型半导体层接触的接触金属层，接触金属层上的电流扩散层，电导率较大的电流扩散层 比接触金属层的厚度以及电流扩散层的接合焊盘层。

公开(公告)号：US07875896B2

公开(公告)日：2011-01-25

申请号：US10593288

申请日：2005-04-28

申请人： Munetaka Watanabe ,  Noritaka Muraki ,  Koji Kamei ,  Yasushi Ohno

发明人： Munetaka Watanabe ,  Noritaka Muraki ,  Koji Kamei ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere.The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer, and a bonding pad layer on the current diffusing layer.

摘要翻译： 本发明的目的是提供一种在氧气氛中具有高透明度，低接触电阻和优异的电流扩散性，并且不需要电子束照射，高温退火或热处理用于合金化的正极。 本发明的氮化镓系化合物半导体发光元件用透明正极包括与p型半导体层接触的接触金属层，接触金属层上的电流扩散层，电导率较大的电流扩散层 比接触金属层的厚度以及电流扩散层的接合焊盘层。

公开(公告)号：US08115212B2

公开(公告)日：2012-02-14

申请号：US11658352

申请日：2005-07-28

申请人： Hisayuki Miki ,  Noritaka Muraki ,  Munetaka Watanabe

发明人： Hisayuki Miki ,  Noritaka Muraki ,  Munetaka Watanabe

IPC分类号： H01L27/15 ,  H01L29/24

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079

摘要： An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage.The inventive positive electrode for a semiconductor light-emitting device comprises a transparent electrode formed on a semiconductor layer and a bonding pad electrode formed on the transparent electrode, wherein the bonding pad electrode has a reflecting layer that is in contact with at least the transparent electrode.

摘要翻译： 本发明的目的是提供一种用于面朝上型芯片的透明正极，即使使用低驱动电压也能发出强光。 本发明的半导体发光装置用正极包括形成在半导体层上的透明电极和形成在透明电极上的焊盘电极，其中，焊盘电极具有至少与透明电极接触的反射层 。

公开(公告)号：US20080042159A1

公开(公告)日：2008-02-21

申请号：US11659360

申请日：2005-07-27

申请人： Nobuo Eitoh ,  Noritaka Muraki ,  Hisayuki Miki ,  Munetaka Watanabe

发明人： Nobuo Eitoh ,  Noritaka Muraki ,  Hisayuki Miki ,  Munetaka Watanabe

IPC分类号： H01L33/00 ,  H01L21/28

CPC分类号： H01L33/42 ,  H01L33/32

摘要： A transparent electrode for a gallium nitride-based compound semiconductor light-emitting device includes a p-type semiconductor layer (5), a contact metal layer (1) formed by ohmic contact on the p-type semiconductor layer, an current diffusion layer (12) formed on the contact metal layer and having a lower magnitude of resistivity on the plane of the transparent electrode than the contact metal, and a bonding pad (13) formed on the current diffusion layer. The transparent electrode is at an advantage in widening the surface of light emission in the p-type semiconductor layer, decreasing the operation voltage in the forward direction, and enabling the bonding pad to provide excellent adhesive strength.

摘要翻译： 用于氮化镓基化合物半导体发光器件的透明电极包括p型半导体层（5），在p型半导体层上由欧姆接触形成的接触金属层（1），电流扩散层 12），形成在所述接触金属层上，并且在所述透明电极的平面上的电阻率比接触金属低，并且形成在所述电流扩散层上的接合焊盘（13）。 透明电极在扩大p型半导体层的发光表面方面具有优点，降低了正向的工作电压，能够提供优异的粘合强度。

公开(公告)号：US20060175682A1

公开(公告)日：2006-08-10

申请号：US11348486

申请日：2006-02-07

申请人： Noritaka Muraki ,  Munetaka Watanabe ,  Yasushi Ohono ,  Hisayuki Miki

发明人： Noritaka Muraki ,  Munetaka Watanabe ,  Yasushi Ohono ,  Hisayuki Miki

IPC分类号： H01L31/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40

摘要： A transparent electrode for use in a gallium nitride-based compound semiconductor light-emitting device having an emission wavelength of 440 nm or less, includes a metal layer disposed in contiguity to a p-type semiconductor layer and a current diffusion layer disposed on the metal layer. The transparent electrode contains substantially no Au in the whole region thereof. The metal layer contains any one element selected from the group consisting of Pt, Ir, Ru and Rh as a main component. The current diffusion layer contains any one element selected from the group consisting of Pt, Ir, Ru and Rh as a main component except for the case where the metal layer and the current diffusion layer have the same composition. It is possible to provide a white light-emitting device provided with the transparent electrode, a white light-emitting lamp using the white light-emitting device and a lighting fixture using the white light-emitting lamp.

摘要翻译： 用于发射波长为440nm以下的氮化镓系化合物半导体发光元件的透明电极包括与p型半导体层相邻设置的金属层和设置在金属上的电流扩散层 层。 透明电极在其整个区域基本上不含Au。 金属层含有选自由Pt，Ir，Ru和Rh组成的组中的任何一种元素作为主要成分。 除了金属层和电流扩散层具有相同组成的情况之外，电流扩散层包含选自由Pt，Ir，Ru和Rh组成的组中的任何一种元素作为主要成分。 可以提供一种设置有透明电极的白色发光装置，使用白色发光装置的白色发光灯和使用白色发光灯的照明器具。