公开(公告)号：US20070200129A1

公开(公告)日：2007-08-30

申请号：US10593288

申请日：2005-04-28

申请人： Munetaka Watanabe ,  Noritaka Muraki ,  Koji Kamei ,  Yasushi Ohno

发明人： Munetaka Watanabe ,  Noritaka Muraki ,  Koji Kamei ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere. The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer, and a bonding pad layer on the current diffusing layer.

摘要翻译： 本发明的目的是提供一种在氧气氛中具有高透明度，低接触电阻和优异的电流扩散性，并且不需要电子束照射，高温退火或热处理用于合金化的正极。 本发明的氮化镓系化合物半导体发光元件用透明正极包括与p型半导体层接触的接触金属层，接触金属层上的电流扩散层，电导率较大的电流扩散层 比接触金属层的厚度以及电流扩散层的接合焊盘层。

公开(公告)号：US08049243B2

公开(公告)日：2011-11-01

申请号：US11597413

申请日：2005-05-19

申请人： Koji Kamei ,  Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

发明人： Koji Kamei ,  Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.

摘要翻译： 该氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体构成的n型半导体层，发光层和p型半导体层，并依次沉积在基板上， 并且还包括分别与n型半导体层和p型半导体层接触的负极和正极，其中所述正极具有由包括接触金属的三层结构构成的透光性电极 至少与p型半导体层接触的层，设置在接触金属层上并具有大于接触金属层的导电性的电流扩散层，以及设置在电流扩散层上的接合焊盘层，以及混合正极 包含形成接触金属层的金属的电极 - 金属层存在于p型半导体的正极侧表面上 导体层。

公开(公告)号：US07875896B2

公开(公告)日：2011-01-25

申请号：US10593288

申请日：2005-04-28

申请人： Munetaka Watanabe ,  Noritaka Muraki ,  Koji Kamei ,  Yasushi Ohno

发明人： Munetaka Watanabe ,  Noritaka Muraki ,  Koji Kamei ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere.The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer, and a bonding pad layer on the current diffusing layer.

摘要翻译： 本发明的目的是提供一种在氧气氛中具有高透明度，低接触电阻和优异的电流扩散性，并且不需要电子束照射，高温退火或热处理用于合金化的正极。 本发明的氮化镓系化合物半导体发光元件用透明正极包括与p型半导体层接触的接触金属层，接触金属层上的电流扩散层，电导率较大的电流扩散层 比接触金属层的厚度以及电流扩散层的接合焊盘层。

公开(公告)号：US20080315237A1

公开(公告)日：2008-12-25

申请号：US11597413

申请日：2005-05-19

申请人： Koji Kamei ,  Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

发明人： Koji Kamei ,  Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.

摘要翻译： 该氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体构成的n型半导体层，发光层和p型半导体层，并依次沉积在基板上， 并且还包括分别与n型半导体层和p型半导体层接触的负极和正极，其中所述正极具有由包括接触金属的三层结构构成的透光性电极 至少与p型半导体层接触的层，设置在接触金属层上并具有大于接触金属层的导电性的电流扩散层，以及设置在电流扩散层上的接合焊盘层，以及混合正极 包含形成接触金属层的金属的电极 - 金属层存在于p型半导体的正极侧表面上 导体层。

公开(公告)号：US20080048172A1

公开(公告)日：2008-02-28

申请号：US10586909

申请日：2005-01-28

申请人： Noritaka Muraki ,  Munetaka Watanabe ,  Hisayuki Miki ,  Yasushi Ohno

发明人： Noritaka Muraki ,  Munetaka Watanabe ,  Hisayuki Miki ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/42

摘要： A gallium nitride compound semiconductor light-emitting device includes a crystalline substrate (10), a light-emiting layer (15) of a quantum well structure which is formed of a gallium nitride compound semiconductor barrier layer and a gallium nitride compound semiconductor well layer, which light-emitting layer is provided on a second side of the crystalline substrate, a contact layer (17) formed of a Group III-V compound semiconductor for providing an Ohmic electrode for supplying device operation current to the light-emitting layer, and an Ohmic electrode (18) which is provided on the contact layer and has an aperture through which a portion of the contact layer is exposed. The Ohmic electrode exhibits light permeability with respect to light emitted from the light-emitting layer. The well layer contains a thick portion having a large thickness and a thin portion having a small thickness.

摘要翻译： 氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体势垒层和氮化镓系化合物半导体阱层构成的量子阱结构的结晶性基板（10），发光层（15） 所述发光层设置在所述结晶基板的第二面上，由用于提供用于向所述发光层提供器件工作电流的欧姆电极的III-V族化合物半导体形成的接触层（17） 欧姆电极（18），其设置在接触层上并且具有孔，接触层的一部分穿过该孔露出。 欧姆电极相对于从发光层发射的光呈现透光性。 阱层包含厚度较大的厚壁部分和厚度较小的薄壁部分。

公开(公告)号：US07402830B2

公开(公告)日：2008-07-22

申请号：US10592759

申请日：2005-03-15

申请人： Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

发明人： Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  H01L33/0095

摘要： The inventive gallium nitride compound semiconductor light-emitting device comprises a substrate; an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, the layers being successively provided atop the substrate and being formed of a gallium nitride compound semiconductor; a negative electrode provided on the n-type semiconductor layer at a certain portion thereof, the portion being exposed by partial, depthwise removal of the light-emitting layer and the p-type semiconductor layer altogether through reactive ion etching; and a positive electrode provided on the remaining p-type semiconductor layer, wherein the gallium nitride compound semiconductor light-emitting device is produced through reactive ion etching by use of silicon tetrachloride as the sole etching gas.

摘要翻译： 本发明的氮化镓化合物半导体发光器件包括衬底; n型半导体层，发光层，p型半导体层，这些层被连续地设置在衬底上并由氮化镓化合物半导体形成; 设置在n型半导体层的某一部分的负极，该部分通过反应离子蚀刻部分地深度地去除发光层和p型半导体层而被曝光; 以及设置在剩余p型半导体层上的正极，其中通过使用四氯化硅作为唯一蚀刻气体通过反应离子蚀刻制造氮化镓系化合物半导体发光器件。

公开(公告)号：US20070187666A1

公开(公告)日：2007-08-16

申请号：US10592759

申请日：2005-03-15

申请人： Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

发明人： Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  H01L33/0095

摘要： An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having excellent heat resistance, which device is resistive to an increase in the forward operation voltage (VF) caused by mild heating performed after formation of the light-emitting device (e.g., heating to about 300° C. during mounting of the light-emitting device). The inventive gallium nitride compound semiconductor light-emitting device comprises a substrate; an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, the layers being successively provided atop the substrate and being formed of a gallium nitride compound semiconductor; a negative electrode provided on the n-type semiconductor layer at a certain portion thereof, the portion being exposed by partial, depthwise removal of the light-emitting layer and the p-type semiconductor layer altogether through reactive ion etching; and a positive electrode provided on the remaining p-type semiconductor layer, wherein the gallium nitride compound semiconductor light-emitting device is produced through reactive ion etching by use of silicon tetrachloride as the sole etching gas.

摘要翻译： 本发明的目的是提供一种耐热性优异的氮化镓系化合物半导体发光元件，其特征在于，能够抑制由形成发光后的温和加热引起的正向工作电压（VF）的上升 装置（例如，在安装发光装置期间加热至约300℃）。 本发明的氮化镓化合物半导体发光器件包括衬底; n型半导体层，发光层，p型半导体层，这些层被连续地设置在衬底上并由氮化镓化合物半导体形成; 设置在n型半导体层的某一部分的负极，该部分通过反应离子蚀刻部分地深度地去除发光层和p型半导体层而被曝光; 以及设置在剩余p型半导体层上的正极，其中通过使用四氯化硅作为唯一蚀刻气体通过反应离子蚀刻制造氮化镓系化合物半导体发光器件。

公开(公告)号：US20130312574A1

公开(公告)日：2013-11-28

申请号：US13983450

申请日：2012-06-21

申请人： Yasushi Ohno

发明人： Yasushi Ohno

IPC分类号： B25B13/20

CPC分类号： B25B13/20 ,  B25B13/14

摘要： A positioning function when a width-across-flats dimension of a tool is adjusted and a function of preventing a deviation in the adjusted width-across-flats dimension are fulfilled by a projection of a flat spring part being fitted into each fitting recess.By selecting the line of a fitting recess to be used according to the standard of an object to be clamped such as a nut, the positioning function and the function of preventing a deviation can be easily and reliably fulfilled even for the width-across-flats dimensions of different standards.

摘要翻译： 当调节工具的宽度 - 跨平面尺寸并且通过装配到每个装配凹部中的平板弹簧部分的突起来满足防止调整的宽度 - 跨平面尺寸的偏差的功能时的定位功能。 通过根据诸如螺母的夹紧对象的标准来选择要使用的装配凹槽的线，即使对于宽度跨平面，也可以容易且可靠地实现定位功能和防止偏移的功能 尺寸不同的标准。

公开(公告)号：US20110054179A1

公开(公告)日：2011-03-03

申请号：US12922374

申请日：2009-03-13

申请人： Shinya Minatoguchi ,  Yasushi Ohno ,  Youichi Yabuuchi ,  Kounori Kotosai ,  Hisashi Nagamoto

发明人： Shinya Minatoguchi ,  Yasushi Ohno ,  Youichi Yabuuchi ,  Kounori Kotosai ,  Hisashi Nagamoto

IPC分类号： C07D417/04

CPC分类号： A61K31/4439 ,  Y02A50/411

摘要： The present invention provides a highly safe pharmaceutical preparation effective for diseases caused by MMP-2 and/or MMP-9. The pharmaceutical preparation contains, as an active ingredient, at least one member selected from the group consisting of thiazole derivatives represented by Formula (1): wherein R1 represents a phenyl group that may have 1 to 3 lower alkoxy groups as substituents on the phenyl ring, and R2 represents a pyridyl group that may have 1 to 3 carboxyl groups as substituents on the pyridine ring, and salts thereof. Such thiazole derivatives have MMP-2 and/or MMP-9 inhibitory activity.

摘要翻译： 本发明提供了对由MMP-2和/或MMP-9引起的疾病有效的高度安全的药物制剂。 药物制剂含有选自由式（1）表示的噻唑衍生物中的至少一种作为活性成分：其中R 1表示可以具有1-3个低级烷氧基作为苯环上的取代基的苯基 ，R 2表示可以在吡啶环上具有1〜3个羧基作为取代基的吡啶基及其盐。 这样的噻唑衍生物具有MMP-2和/或MMP-9抑制活性。

公开(公告)号：US5187704A

公开(公告)日：1993-02-16

申请号：US530000

申请日：1990-05-29

申请人： Naohiro Shimada ,  Yasushi Ohno ,  Masaaki Saito

发明人： Naohiro Shimada ,  Yasushi Ohno ,  Masaaki Saito

IPC分类号： H04J3/14 ,  H04L1/22 ,  H04M3/24

CPC分类号： H04J3/14 ,  H04L1/22 ,  H04M3/244

摘要： In a multiplexing/demultiplexing apparatus, readiness of stand-by circuits is monitored through a variety of switching arrangements, by routing a monitoring signal through the circuits. In one alternative embodiment, level correcting means are provided so that the monitoring signal is kept at the proper level, thus ensuring accurate monitoring of the stand-by circuits.

摘要翻译： 在复用/解复用装置中，通过各种切换装置来监视备用电路的准备状态，通过路由监视信号通过电路。 在一个替代实施例中，提供了电平校正装置，使得监视信号保持在适当的电平，从而确保待机电路的准确监视。